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METHOD OF FABRICATING THIN-FILM TRANSISTOR

外国特許コード F070001672
整理番号 F070001672
掲載日 2007年9月14日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2006JP306307
国際公開番号 WO 2006/109565
国際出願日 平成18年3月28日(2006.3.28)
国際公開日 平成18年10月19日(2006.10.19)
優先権データ
  • 特願2005-113361 (2005.4.11) JP
発明の名称 (英語) METHOD OF FABRICATING THIN-FILM TRANSISTOR
発明の概要(英語) The core metal of a protein such as ferritin is used as a nucleus for crystallizing asilicone thin film and then the thus crystallized film is employed in the channel partof a thin-film transistor. By aligning the protein on the surface of amorphous siliconeand heating, the crystallinity is controlled. In the case of ferritin, the corediameter of the protein is 7 mm. That is, this protein is highly even in size (i.e.,the metal content). Thus, the amount of the protein to be deposited on the amorphoussilicone surface can be accurately controlled by controlling the protein coredensity. Furthermore, the type of the core metal can be altered by chemical reactionsand the above method is applicable not only to amorphous silicone but also to amorphousfilms of various types such as germanium. Thus, the amount of nickel requiredin crystallization is controlled by using a protein. Moreover, the distributiondensity of the nickel core is controlled to thereby conduct crystallizationat a desired crystal size.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • National University Corporation Nara Institute Of Science And Technology
  • 発明者(英語)
  • Uraoka, Yukiharu
  • Fuyuki, Takashi
  • Kirimura, Hiroya
国際特許分類(IPC)
指定国 AE AG AL AM AT AU AZ BA BB BE BF BG BJ BR BW BY BZ CA CF CG CH CI CM CN CO CR CU CY CZ DE DK DM DZ EC EE EG ES FI FR GA GB GD GE GH GM GN GQ GR GW HR HU ID IE IL IN IS IT JP KE KG KM KN KP KR KZ LC LK LR LS LT LU LV LY MA MC MD MG MK ML MN MR MW MX MZ NA NE NG NI NL NO NZ OM PG PH PL PT RO RU SC SD SE SG SI SK SL SM SN SY SZ TD TG TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW
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