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SEMICONDUCTOR DEVICE PRODUCING METHOD AND SEMICONDUCTOR DEVICE

外国特許コード F070001673
整理番号 F070001673
掲載日 2007年9月14日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2006JP306306
国際公開番号 WO 2006/104150
国際出願日 平成18年3月28日(2006.3.28)
国際公開日 平成18年10月5日(2006.10.5)
優先権データ
  • 特願2005-090611 (2005.3.28) JP
発明の名称 (英語) SEMICONDUCTOR DEVICE PRODUCING METHOD AND SEMICONDUCTOR DEVICE
発明の概要(英語) A dot sequence structure where cores or insulators only are arranged orderly ona silicon substrate is obtained by going through a cage-form protein supermolecule producingprocess (S101), a film producing process (S102) using a cage-form protein supermoleculeand a process of removing the protein coating of a cage-form protein supermolecule(S103). Next, a silicon film (Si) is grown on a dot-sequenced substrate by a CVDmethod, an aluminum electrode is vapor-deposited on the upper surface thereof,and the film is subjected to a capacitor-structure preparation process (104).Further, an aluminum electrode is provided and the product is subjected to a physical-structurefabrication processing as a floating gate device (S105). Finally, an annealingprocessing (S106) is performed. The annealing processing reduces each dot whichhas been an insulator by means of a silicon film to modify it to exhibit conductivity.Whereby, a semiconductor device producing method and a semiconductor capableof constantly maintaining conductivity are provided without inviting a deteriorationin dot conductivity.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • National University Corporation Nara Institute Of Science And Technology
  • 発明者(英語)
  • Fuyuki, Takashi
  • Uraoka, Yukiharu
  • Hikono, Takio
  • Miura, Atsushi
国際特許分類(IPC)
指定国 AE AG AL AM AT AU AZ BA BB BE BF BG BJ BR BW BY BZ CA CF CG CH CI CM CN CO CR CU CY CZ DE DK DM DZ EC EE EG ES FI FR GA GB GD GE GH GM GN GQ GR GW HR HU ID IE IL IN IS IT JP KE KG KM KN KP KR KZ LC LK LR LS LT LU LV LY MA MC MD MG MK ML MN MR MW MX MZ NA NE NG NI NL NO NZ OM PG PH PL PT RO RU SC SD SE SG SI SK SL SM SN SY SZ TD TG TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW
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