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VOX film, wherein X is greater than 1.875 and less than 2.0, and a bolometer-type infrared sensor comprising the VOX film

外国特許コード F070001728
整理番号 F070001728
掲載日 2007年11月16日
出願国 アメリカ合衆国
出願番号 75414096
公報番号 5801383
出願日 平成8年11月22日(1996.11.22)
公報発行日 平成10年9月1日(1998.9.1)
優先権データ
  • 特願1995-304226 (1995.11.22) JP
  • 特願1996-071983 (1996.3.27) JP
発明の名称 (英語) VOX film, wherein X is greater than 1.875 and less than 2.0, and a bolometer-type infrared sensor comprising the VOX film
発明の概要(英語) At a heat treatment temperature in a reducing atmosphere of Ar and H 2, a precursory film of V 2 O 5 is reduced into a VO x film with the heat treatment temperature selected in a predetermined temperature range between 350 ° C. and 450° C., both exclusive, to control a resistivity of the VO x film, where x is greater than 1.875 and less than 2.0. The VO x film is not susceptible to a metal-semiconductor phase transition inevitable in VO 2 at about 70° C. and is excellent for use in a bolometer-type infrared sensor. When reduced at 350° C. and 450° C. the resistivity and its temperature coefficient of the VO x film at room temperature are 0.5 and 0.002 Ω cm and -2.2% and 0.2% per degree Celsius.
  • 発明者/出願人(英語)
  • Wada; Hideo
  • Nagashima; Mitsuhiro
  • Oda; Naoki
  • Sasaki; Tokuhito
  • Mori; Toru
  • Masahiro Ota, Director General, Technical Research and Development Institute, Japan Defense Agency
  • NEC Corporation
国際特許分類(IPC)
米国特許分類/主・副
  • 250/332

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