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SEMICONDUCTOR LIGHT-EMITTING ELEMENT ARRAY AND MANUFACTURING METHOD THEREOF

外国特許コード F100002204
整理番号 F100002204
掲載日 2010年6月25日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2008JP002956
国際公開番号 WO 2010/044129
国際出願日 平成20年10月17日(2008.10.17)
国際公開日 平成22年4月22日(2010.4.22)
発明の名称 (英語) SEMICONDUCTOR LIGHT-EMITTING ELEMENT ARRAY AND MANUFACTURING METHOD THEREOF
発明の概要(英語) Semiconductor surface emitting elements having a plurality of wavelengths being manufactured on a single substrate through MOVPE selective growth. More specifically, provided is a semiconductor light emitting element array which comprises; a semiconductor crystal substrate; an insulating film disposed on a surface of the substrate, the insulating film being divided into two or more regions, each of which having two or more openings exposing the surface of the substrate; semiconductor rods extending from the surface of the substrate upward through the openings, the semiconductor rods each having an n-type semiconductor layer and a p-type semiconductor layer being laminated in its extending direction, thereby providing a p-n junction; a first electrode connected to the semiconductor crystal substrate; and a second electrode connected to upper portions of the semiconductor rods; wherein the heights of the semiconductor rods as measured from the substrate surface vary by each of the two or more regions.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • National University Corporation Hokkaido University
  • 発明者(英語)
  • Hiruma, Kenji
  • Hara, Shinjiro
  • Motohisa, Junichi
  • Fukui, Takashi
国際特許分類(IPC)
指定国 AE AG AL AM AO AT AU AZ BA BB BE BF BG BH BJ BR BW BY BZ CA CF CG CH CI CM CN CO CR CU CY CZ DE DK DM DO DZ EC EE EG ES FI FR GA GB GD GE GH GM GN GQ GR GT GW HN HR HU ID IE IL IN IS IT JP KE KG KM KN KP KR KZ LA LC LK LR LS LT LU LV LY MA MC MD ME MG MK ML MN MR MT MW MX MY MZ NA NE NG NI NL NO NZ OM PG PH PL PT RO RS RU SC SD SE SG SI SK SL SM SN ST SV SY SZ TD TG TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
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