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PHOTOSENSOR AND METHOD FOR MANUFACTURING THE PHOTOSENSOR コモンズ 新技術説明会

外国特許コード F100002343
掲載日 2010年12月15日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2009JP067046
国際公開番号 WO 2010/038785
国際出願日 平成21年9月30日(2009.9.30)
国際公開日 平成22年4月8日(2010.4.8)
優先権データ
  • 特願2008-255374 (2008.9.30) JP
発明の名称 (英語) PHOTOSENSOR AND METHOD FOR MANUFACTURING THE PHOTOSENSOR コモンズ 新技術説明会
発明の概要(英語) Disclosed is a photosensor having excellent response to long-wavelength light. Also disclosed is a method for manufacturing the photosensor. The photosensor comprises an electrical conductivity variable material which causes a change in electrical conductivity upon receipt of light, first and second electrodes provided on a light receiving surface of the electrical conductivity variable material, and a current detecting means which detects current generated between the first electrode and the second electrode. The electrical conductivity variable material is formed of a compound having a layered triangle lattice structure containing a rare earth element. The compound has a layered triangle lattice structure represented by (RMbO3-.delta.)n(MaO)m wherein R represents at least one element selected from In, Sc, Y, Dy, Ho, Er, Tm, Yb, Lu, Ti, Ca, Sr, Ce, Sn, and Hf; Ma and Mb independently represent at least one element selected from Ti, Mn, Fe, Co, Cu, Ga, Zn, Al, Mg, and Cd; n is an integer of 1 or more; m is an integer of 0 or more; and .delta. is a real number of 0 to 0.2. In the compound, one or some of R's may be replaced by a positive divalent or lower element.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • NATIONAL UNIVERSITY CORPORATION OKAYAMA UNIVERSITY
  • 発明者(英語)
  • IKEDA, Naoshi
  • KUBOZONO, Yoshihiro
  • KAMBE, Takashi
国際特許分類(IPC)
指定国 AE(UTILITY MODEL),AG,AL(UTILITY MODEL),AM(PROVISIONAL PATENT)(UTILITY MODEL),AO(UTILITY MODEL),AT(UTILITY MODEL),AU,AZ(UTILITY MODEL),BA,BB,BG(UTILITY MODEL),BH(UTILITY MODEL),BR(UTILITY MODEL),BW(UTILITY MODEL),BY(UTILITY MODEL),BZ(UTILITY MODEL),CA,CH,CL(UTILITY MODEL),CN(UTILITY MODEL),CO(UTILITY MODEL),CR(UTILITY MODEL),CU(INVENTOR'S CERTIFICATE),CZ(UTILITY MODEL),DE(UTILITY MODEL),DK(UTILITY MODEL),DM,DO(UTILITY MODEL),DZ,EC(UTILITY MODEL),EE(UTILITY MODEL),EG(UTILITY MODEL),ES(UTILITY MODEL),FI(UTILITY MODEL),GB,GD,GE(UTILITY MODEL),GH(UTILITY CERTIFICATE),GM,GT(UTILITY MODEL),HN,HR(CONSENSUAL PATENT),HU(UTILITY MODEL),ID,IL,IN,IS,JP(UTILITY MODEL),KE(UTILITY MODEL),KG(UTILITY MODEL),KM,KN,KP(INVENTOR'S CERTIFICATE)(UTILITY MODEL),KR(UTILITY MODEL),KZ(PROVISIONAL PATENT)(UTILITY MODEL),LA,LC,LK,LR,LS(UTILITY MODEL),LT,LU,LY,MA,MD(UTILITY MODEL),ME,MG,MK,MN,MW,MX(UTILITY MODEL),MY(UTILITY-INNOVATION),MZ(UTILITY MODEL),NA,NG,NI(UTILITY MODEL),NO,NZ,OM(UTILITY MODEL),PE(UTILITY MODEL),PG,PH(UTILITY MODEL),PL(UTILITY MODEL),PT(UTILITY MODEL),RO,RS(PETTY PATENT),RU(UTILITY MODEL),SC,SD,SE,SG,SK(UTILITY MODEL),SL(UTILITY MODEL),SM,ST,SV(UTILITY MODEL),SY,TJ(UTILITY MODEL),TM(PROVISIONAL PATENT),TN,TR(UTILITY MODEL),TT(UTILITY CERTIFICATE),TZ,UA(UTILITY MODEL),UG(UTILITY CERTIFICATE),US,UZ(UTILITY MODEL),VC(UTILITY CERTIFICATE),VN(PATENT FOR UTILITY SOLUTION),ZA,ZM,ZW,EP(AT,BE,BG,CH,CY,CZ,DE,DK,EE,ES,FI,FR,GB,GR,HR,HU,IE,IS,IT,LT,LU,LV,MC,MK,MT,NL,NO,PL,PT,RO,SE,SI,SK,SM,TR),OA(BF(UTILITY MODEL),BJ(UTILITY MODEL),CF(UTILITY MODEL),CG(UTILITY MODEL),CI(UTILITY MODEL),CM(UTILITY MODEL),GA(UTILITY MODEL),GN(UTILITY MODEL),GQ(UTILITY MODEL),GW(UTILITY MODEL),ML(UTILITY MODEL),MR(UTILITY MODEL),NE(UTILITY MODEL),SN(UTILITY MODEL),TD(UTILITY MODEL),TG(UTILITY MODEL)),AP(BW(UTILITY MODEL),GH(UTILITY MODEL),GM(UTILITY MODEL),KE(UTILITY MODEL),LS(UTILITY MODEL),MW(UTILITY MODEL),MZ(UTILITY MODEL),NA(UTILITY MODEL),SD(UTILITY MODEL),SL(UTILITY MODEL),SZ(UTILITY MODEL),TZ(UTILITY MODEL),UG(UTILITY MODEL),ZM(UTILITY MODEL),ZW(UTILITY MODEL)),EA(AM,AZ,BY,KG,KZ,MD,RU,TJ,TM)

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