TOP > 外国特許検索 > SEMICONDUCTOR SENSING FIELD EFFECT TRANSISTOR, SEMICONDUCTOR SENSING DEVICE, SEMICONDUCTOR SENSOR CHIP AND SEMICONDUCTOR SENSING DEVICE

SEMICONDUCTOR SENSING FIELD EFFECT TRANSISTOR, SEMICONDUCTOR SENSING DEVICE, SEMICONDUCTOR SENSOR CHIP AND SEMICONDUCTOR SENSING DEVICE

外国特許コード F110002393
整理番号 65-KR
掲載日 2011年2月3日
出願国 大韓民国
出願番号 20077004021
公報番号 20070069135
公報番号 101137736
出願日 平成17年3月11日(2005.3.11)
公報発行日 平成19年7月2日(2007.7.2)
公報発行日 平成24年4月24日(2012.4.24)
優先権データ
  • 特願2004-287286 (2004.9.30) JP
  • 特願2004-329172 (2004.11.12) JP
発明の名称 (英語) SEMICONDUCTOR SENSING FIELD EFFECT TRANSISTOR, SEMICONDUCTOR SENSING DEVICE, SEMICONDUCTOR SENSOR CHIP AND SEMICONDUCTOR SENSING DEVICE
発明の概要(英語)

A semiconductor sensing field effect transistor uses an organic unimolecular film formed on a gate insulating layer. In the semiconductor sensing field effect transistor and a semiconductor sensing device, the gate insulating layer has a stack structure wherein a second silicon oxide layer is stacked on a first silicon oxide layer through a silicon nitride layer. A semiconductor sensor chip and the semiconductor sensing device are provided with a field effect transistor chip wherein the gate insulating layer, a source electrode and a drain electrode are integrated on a silicon board, a source electrode terminal wiring connected with the source electrode, and a drain electrode terminal wiring connected with the drain electrode.

In the semiconductor sensor chip and the semiconductor sensing device, the transistor chip, the source electrode terminal wiring and the drain electrode terminal wiring are sealed so as to expose an edge part which is not connected with the gate insulating layer of the transistor chip and the source electrode of the source electrode terminal wiring, and an edge part which is not connected with the drain electrode of the drain electrode terminal wiring.

  • 出願人(英語)
  • WASEDA UNIVERSITY
  • 発明者(英語)
  • NIWA DAISUKE,
  • KOIWA ICHIRO,
  • OSAKA TETSUYA
国際特許分類(IPC)
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