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ORGANIC SEMICONDUCTOR MATERIAL AND ORGANIC THIN FILM TRANSISTOR コモンズ

外国特許コード F110002475
整理番号 8074PCT
掲載日 2011年4月18日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2010JP053577
国際公開番号 WO 2010/101224
国際出願日 平成22年3月4日(2010.3.4)
国際公開日 平成22年9月10日(2010.9.10)
優先権データ
  • 特願2009-053759 (2009.3.6) JP
発明の名称 (英語) ORGANIC SEMICONDUCTOR MATERIAL AND ORGANIC THIN FILM TRANSISTOR コモンズ
発明の概要(英語) Disclosed is an organic semiconductor material which has high carrier mobility and high stability and can be formed into a film by a simple production process. Also disclosed is an organic thin film transistor, in which the organic semiconductor material is used in an organic semiconductor layer. Specifically disclosed is an organic semiconductor material characterized by comprising a compound having a structure represented by general formula (1). (In the formula, L represents a bivalent linkage group and has a structure formed by any one group selected from an unsubstituted or substituted vinylene group, an acethylene group, an unsubstituted or substituted aromatic cyclic hydrocarbon residue, an unsubstituted or substituted aromatic fused ring hydrocarbon residue, an unsubstituted or substituted aromatic heterocyclic hydrocarbon residue and an unsubstituted or substituted fused aromatic heterocyclic hydrocarbon residue or a combination of two or more of the aforementioned groups; R1 represents a carbonyl group, a cyano group, or a fluorine-substituted alkyl group having 1 to 12 carbon atoms; and R2 represents a halogen atom, a cyano group, a carbonyl group, or an acetyl group.)
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • Kyushu Institute of Technology
  • 発明者(英語)
  • NAGAMATSU, Shuichi
  • TAKASHIMA, Wataru
  • OKAUCHI, Tatsuo
  • MORIGUCHI, Tetsuji
  • MIZOGUCHI, Katsuhiro
  • KANETO, Keiichi
  • HAYASE, Shuzi
国際特許分類(IPC)
指定国 AE(UTILITY MODEL),AG,AL(UTILITY MODEL),AM(PROVISIONAL PATENT)(UTILITY MODEL),AO(UTILITY MODEL),AT(UTILITY MODEL),AU,AZ(UTILITY MODEL),BA,BB,BG(UTILITY MODEL),BH(UTILITY MODEL),BR(UTILITY MODEL),BW(UTILITY MODEL),BY(UTILITY MODEL),BZ(UTILITY MODEL),CA,CH,CL(UTILITY MODEL),CN(UTILITY MODEL),CO(UTILITY MODEL),CR(UTILITY MODEL),CU(INVENTOR'S CERTIFICATE),CZ(UTILITY MODEL),DE(UTILITY MODEL),DK(UTILITY MODEL),DM,DO(UTILITY MODEL),DZ,EC(UTILITY MODEL),EE(UTILITY MODEL),EG(UTILITY MODEL),ES(UTILITY MODEL),FI(UTILITY MODEL),GB,GD,GE(UTILITY MODEL),GH(UTILITY CERTIFICATE),GM,GT(UTILITY MODEL),HN(UTILITY MODEL),HR(CONSENSUAL PATENT),HU(UTILITY MODEL),ID,IL,IN,IS,JP(UTILITY MODEL),KE(UTILITY MODEL),KG(UTILITY MODEL),KM,KN,KP(INVENTOR'S CERTIFICATE)(UTILITY MODEL),KR(UTILITY MODEL),KZ(PROVISIONAL PATENT)(UTILITY MODEL),LA,LC,LK,LR,LS(UTILITY MODEL),LT,LU,LY,MA,MD(UTILITY MODEL),ME,MG,MK,MN,MW,MX(UTILITY MODEL),MY(UTILITY-INNOVATION),MZ(UTILITY MODEL),NA,NG,NI(UTILITY MODEL),NO,NZ,OM(UTILITY MODEL),PE(UTILITY MODEL),PG,PH(UTILITY MODEL),PL(UTILITY MODEL),PT(UTILITY MODEL),RO,RS(PETTY PATENT),RU(UTILITY MODEL),SC,SD,SE,SG,SK(UTILITY MODEL),SL(UTILITY MODEL),SM,ST,SV(UTILITY MODEL),SY,TH(PETTY PATENT),TJ(UTILITY MODEL),TM(PROVISIONAL PATENT),TN,TR(UTILITY MODEL),TT(UTILITY CERTIFICATE),TZ,UA(UTILITY MODEL),UG(UTILITY CERTIFICATE),US,UZ(UTILITY MODEL),VC(UTILITY CERTIFICATE),VN(PATENT FOR UTILITY SOLUTION),ZA,ZM,ZW,EP(AT,BE,BG,CH,CY,CZ,DE,DK,EE,ES,FI,FR,GB,GR,HR,HU,IE,IS,IT,LT,LU,LV,MC,MK,MT,NL,NO,PL,PT,RO,SE,SI,SK,SM,TR),OA(BF(UTILITY MODEL),BJ(UTILITY MODEL),CF(UTILITY MODEL),CG(UTILITY MODEL),CI(UTILITY MODEL),CM(UTILITY MODEL),GA(UTILITY MODEL),GN(UTILITY MODEL),GQ(UTILITY MODEL),GW(UTILITY MODEL),ML(UTILITY MODEL),MR(UTILITY MODEL),NE(UTILITY MODEL),SN(UTILITY MODEL),TD(UTILITY MODEL),TG(UTILITY MODEL)),AP(BW(UTILITY MODEL),GH(UTILITY MODEL),GM(UTILITY MODEL),KE(UTILITY MODEL),LS(UTILITY MODEL),MW(UTILITY MODEL),MZ(UTILITY MODEL),NA(UTILITY MODEL),SD(UTILITY MODEL),SL(UTILITY MODEL),SZ(UTILITY MODEL),TZ(UTILITY MODEL),UG(UTILITY MODEL),ZM(UTILITY MODEL),ZW(UTILITY MODEL)),EA(AM,AZ,BY,KG,KZ,MD,RU,TJ,TM)
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