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SEMICONDUCTOR DISTANCE MEASURING ELEMENT AND SOLID-STATE IMAGING DEVICE

外国特許コード F110002590
整理番号 S2008-0649-N0
掲載日 2011年3月28日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2007JP073215
国際公開番号 WO 2008/069141
国際出願日 平成19年11月30日(2007.11.30)
国際公開日 平成20年6月12日(2008.6.12)
優先権データ
  • 特願2006-324501 (2006.11.30) JP
発明の名称 (英語) SEMICONDUCTOR DISTANCE MEASURING ELEMENT AND SOLID-STATE IMAGING DEVICE
発明の概要(英語) A semiconductor distance measuring element is provided with a semiconductor region (1), a light receiving surface embedded region (11a), a first charge storing region (12a), a first charge read region (13), a first potential control means (31), a second potential control means (32), a first discharge drain region (14), and a third potential control means (33). A signal charge dependent on a delay time of reflection light in a first repetition cycle is repeatedly transferred from the light receiving surface embedded region (11a) so as to be stored in the first charge storing region (12a) as a first signal charge. All the signal charges generated by reflection light in a second repetition cycle are repeatedly transferred from the light receiving surface embedded region (11a) and are stored in the first charge storing region (12a) as second signal charges. Then, the ratio of the total quantities of the first and the second signal charges is obtained and a distance to an object is measured.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • National University Corporation Shizuoka University
  • 発明者(英語)
  • KAWAHITO, Shoji
国際特許分類(IPC)
指定国 AE(UTILITY MODEL),AG,AL(UTILITY MODEL),AM(PROVISIONAL PATENT)(UTILITY MODEL),AT(UTILITY MODEL),AU,AZ(UTILITY MODEL),BA,BB,BG(UTILITY MODEL),BH,BR(UTILITY MODEL),BW,BY(UTILITY MODEL),BZ(UTILITY MODEL),CA,CH,CN(UTILITY MODEL),CO(UTILITY MODEL),CR(UTILITY MODEL),CU(INVENTOR'S CERTIFICATE),CZ(UTILITY MODEL),DE(UTILITY MODEL),DK(UTILITY MODEL),DM,DO,DZ,EC(UTILITY MODEL),EE(UTILITY MODEL),EG(UTILITY MODEL),ES(UTILITY MODEL),FI(UTILITY MODEL),GB,GD,GE(UTILITY MODEL),GH,GM,GT,HN,HR(CONSENSUAL PATENT),HU(UTILITY MODEL),ID,IL,IN,IS,JP(UTILITY MODEL),KE(UTILITY MODEL),KG(UTILITY MODEL),KM,KN,KP(INVENTOR'S CERTIFICATE)(UTILITY MODEL),KR(UTILITY MODEL),KZ(PROVISIONAL PATENT)(UTILITY MODEL),LA,LC,LK,LR,LS(UTILITY MODEL),LT,LU,LY,MA,MD(UTILITY MODEL),ME,MG,MK,MN,MW,MX(UTILITY MODEL),MY(UTILITY-INNOVATION),MZ(UTILITY MODEL),NA,NG,NI(UTILITY MODEL),NO,NZ,OM,PG,PH(UTILITY MODEL),PL(UTILITY MODEL),PT(UTILITY MODEL),RO,RS(PETTY PATENT),RU(UTILITY MODEL),SC,SD,SE,SG,SK(UTILITY MODEL),SL(UTILITY MODEL),SM,SV,SY,TJ(UTILITY MODEL),TM(PROVISIONAL PATENT),TN,TR(UTILITY MODEL),TT(UTILITY CERTIFICATE),TZ,UA(UTILITY MODEL),UG(UTILITY CERTIFICATE),US,UZ(UTILITY MODEL),VC(UTILITY CERTIFICATE),VN,ZA,ZM,ZW,EP(AT,BE,BG,CH,CY,CZ,DE,DK,EE,ES,FI,FR,GB,GR,HU,IE,IS,IT,LT,LU,LV,MC,MT,NL,PL,PT,RO,SE,SI,SK,TR),OA(BF(UTILITY MODEL),BJ(UTILITY MODEL),CF(UTILITY MODEL),CG(UTILITY MODEL),CI(UTILITY MODEL),CM(UTILITY MODEL),GA(UTILITY MODEL),GN(UTILITY MODEL),GQ(UTILITY MODEL),GW(UTILITY MODEL),ML(UTILITY MODEL),MR(UTILITY MODEL),NE(UTILITY MODEL),SN(UTILITY MODEL),TD(UTILITY MODEL),TG(UTILITY MODEL)),AP(BW,GH,GM,KE,LS,MW,MZ,NA,SD,SL,SZ,TZ,UG,ZM,ZW),EA(AM,AZ,BY,KG,KZ,MD,RU,TJ,TM)
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