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PROCESS FOR PRODUCING SINGLE CRYSTAL SiC SUBSTRATE AND SINGLE CRYSTAL SiC SUBSTRATE PRODUCED BY THE PROCESS

外国特許コード F110002658
整理番号 S2008-0098-C0
掲載日 2011年4月6日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2008JP070160
国際公開番号 WO 2009/066566
国際出願日 平成20年10月29日(2008.10.29)
国際公開日 平成21年5月28日(2009.5.28)
優先権データ
  • 特願2007-298752 (2007.11.19) JP
発明の名称 (英語) PROCESS FOR PRODUCING SINGLE CRYSTAL SiC SUBSTRATE AND SINGLE CRYSTAL SiC SUBSTRATE PRODUCED BY THE PROCESS
発明の概要(英語) Disclosed is a process for producing a single crystal SiC substrate which can produce a single crystal SiC substrate, which does not cause significant distortion, has a large size, and has good crystallinity, at low cost using a relatively inexpensive polycrystalline SiC substrate as a base material substrate. The production process comprises a P ion implantation step of providing an SOI substrate (1) comprising a Si base material layer (2), and a surface Si layer (3) and an embedded oxide layer (4) each in a predetermined thickness formed on the Si base material layer (2) and implanting P ions from the surface Si layer (3) side into the SOIsubstrate (1) to convert the embedded oxide layer (4) to a PSG layer (6) for softening point lowering, and an SiC forming step of heating the SOI substrate (1) with the PSG layer (6) formed thereon in a hydrocarbon gas atmosphere to convert the surface Si layer (3) to SiC and then cooling the assembly to form a single crystal SiC layer (5) on the surface of the assembly.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • AIR WATER INC.
  • OSAKA PREFECTURE UNIVERSITY
  • 発明者(英語)
  • IZUMI, Katsutoshi
  • YOKOYAMA, Takashi
国際特許分類(IPC)
指定国 AE(UTILITY MODEL),AG,AL(UTILITY MODEL),AM(PROVISIONAL PATENT)(UTILITY MODEL),AO(UTILITY MODEL),AT(UTILITY MODEL),AU,AZ(UTILITY MODEL),BA,BB,BG(UTILITY MODEL),BH(UTILITY MODEL),BR(UTILITY MODEL),BW(UTILITY MODEL),BY(UTILITY MODEL),BZ(UTILITY MODEL),CA,CH,CN(UTILITY MODEL),CO(UTILITY MODEL),CR(UTILITY MODEL),CU(INVENTOR'S CERTIFICATE),CZ(UTILITY MODEL),DE(UTILITY MODEL),DK(UTILITY MODEL),DM(UTILITY MODEL),DO(UTILITY MODEL),DZ,EC(UTILITY MODEL),EE(UTILITY MODEL),EG(UTILITY MODEL),ES(UTILITY MODEL),FI(UTILITY MODEL),GB,GD,GE(UTILITY MODEL),GH(UTILITY CERTIFICATE),GM,GT(UTILITY MODEL),HN,HR(CONSENSUAL PATENT),HU(UTILITY MODEL),ID,IL,IN,IS,KE(UTILITY MODEL),KG(UTILITY MODEL),KM,KN,KP(INVENTOR'S CERTIFICATE)(UTILITY MODEL),KR(UTILITY MODEL),KZ(PROVISIONAL PATENT)(UTILITY MODEL),LA,LC,LK,LR,LS(UTILITY MODEL),LT,LU,LY,MA,MD(UTILITY MODEL),ME(PETTY PATENT),MG,MK,MN,MW,MX(UTILITY MODEL),MY(UTILITY-INNOVATION),MZ(UTILITY MODEL),NA,NG,NI(UTILITY MODEL),NO,NZ,OM(UTILITY MODEL),PG,PH(UTILITY MODEL),PL(UTILITY MODEL),PT(UTILITY MODEL),RO,RS(PETTY PATENT),RU(UTILITY MODEL),SC,SD,SE,SG,SK(UTILITY MODEL),SL(UTILITY MODEL),SM,ST,SV(UTILITY MODEL),SY,TJ(UTILITY MODEL),TM(PROVISIONAL PATENT),TN,TR(UTILITY MODEL),TT(UTILITY CERTIFICATE),TZ,UA(UTILITY MODEL),UG(UTILITY CERTIFICATE),US,UZ(UTILITY MODEL),VC(UTILITY CERTIFICATE),VN(PATENT FOR UTILITY SOLUTION),ZA,ZM,ZW,EP(AT,BE,BG,CH,CY,CZ,DE,DK,EE,ES,FI,FR,GB,GR,HR,HU,IE,IS,IT,LT,LU,LV,MC,MT,NL,NO,PL,PT,RO,SE,SI,SK,TR),OA(BF(UTILITY MODEL),BJ(UTILITY MODEL),CF(UTILITY MODEL),CG(UTILITY MODEL),CI(UTILITY MODEL),CM(UTILITY MODEL),GA(UTILITY MODEL),GN(UTILITY MODEL),GQ(UTILITY MODEL),GW(UTILITY MODEL),ML(UTILITY MODEL),MR(UTILITY MODEL),NE(UTILITY MODEL),SN(UTILITY MODEL),TD(UTILITY MODEL),TG(UTILITY MODEL)),AP(BW(UTILITY MODEL),GH(UTILITY MODEL),GM(UTILITY MODEL),KE(UTILITY MODEL),LS(UTILITY MODEL),MW(UTILITY MODEL),MZ(UTILITY MODEL),NA(UTILITY MODEL),SD(UTILITY MODEL),SL(UTILITY MODEL),SZ(UTILITY MODEL),TZ(UTILITY MODEL),UG(UTILITY MODEL),ZM(UTILITY MODEL),ZW(UTILITY MODEL)),EA(AM,AZ,BY,KG,KZ,MD,RU,TJ,TM)

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