TOP > 外国特許検索 > FLUORESCENT MATERIAL, PROCESS FOR PRODUCING THE SAME, AND WHITE-LIGHT-EMITTING DIODE EMPLOYING THE FLUORESCENT MATERIAL

FLUORESCENT MATERIAL, PROCESS FOR PRODUCING THE SAME, AND WHITE-LIGHT-EMITTING DIODE EMPLOYING THE FLUORESCENT MATERIAL

外国特許コード F110002696
整理番号 S2008-0469-C0
掲載日 2011年4月8日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2009JP055622
国際公開番号 WO 2009/119486
国際出願日 平成21年3月23日(2009.3.23)
国際公開日 平成21年10月1日(2009.10.1)
優先権データ
  • 特願2008-076929 (2008.3.25) JP
  • 特願2008-267596 (2008.10.16) JP
発明の名称 (英語) FLUORESCENT MATERIAL, PROCESS FOR PRODUCING THE SAME, AND WHITE-LIGHT-EMITTING DIODE EMPLOYING THE FLUORESCENT MATERIAL
発明の概要(英語) A novel fluorescent material is provided which has the excellent effects of having high luminescence intensity and being less influenced by temperature changes. Also provided is a process for easily producing this novel fluorescent material in a room-temperature environment. The fluorescent material is characterized by comprising an A2BF6 base crystal (wherein A is K, Na, Rb, or Cs, and B is Si, Ge, Sn, Ti, or Zr, provided that combinations of K and Si, K and Ge, and K and Ti are excluded) which has been partly substituted by a transition metal. The process for producing the fluorescent material is characterized by immersing a B-containing material (B is Si, Ge, Sn, Ti, or Zr, provided that the material is not an oxide material) in a liquid mixture prepared by adding AMnO4 (A is K, Na, Rb, or Cs) to an aqueous HF solution and depositing, on the surface layer of the material, a fluorescent material comprising an A2BF6 base crystal which has been partly substituted by Mn, or by immersing a B-containing oxide material in the liquid mixture to react the liquid mixture with the material and thereby yield a fluorescent material constituted of a crystalline material comprising an A2BF6 base crystal which has been partly substituted by Mn.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • NATIONAL UNIVERSITY CORPORATION GUNMA UNIVERSITY
  • 発明者(英語)
  • ADACHI, Sadao
  • TAKAHASHI, Toru
国際特許分類(IPC)
指定国 AE(UTILITY MODEL),AG,AL(UTILITY MODEL),AM(PROVISIONAL PATENT)(UTILITY MODEL),AO(UTILITY MODEL),AT(UTILITY MODEL),AU,AZ(UTILITY MODEL),BA,BB,BG(UTILITY MODEL),BH(UTILITY MODEL),BR(UTILITY MODEL),BW(UTILITY MODEL),BY(UTILITY MODEL),BZ(UTILITY MODEL),CA,CH,CN(UTILITY MODEL),CO(UTILITY MODEL),CR(UTILITY MODEL),CU(INVENTOR'S CERTIFICATE),CZ(UTILITY MODEL),DE(UTILITY MODEL),DK(UTILITY MODEL),DM(UTILITY MODEL),DO(UTILITY MODEL),DZ,EC(UTILITY MODEL),EE(UTILITY MODEL),EG(UTILITY MODEL),ES(UTILITY MODEL),FI(UTILITY MODEL),GB,GD,GE(UTILITY MODEL),GH(UTILITY CERTIFICATE),GM,GT(UTILITY MODEL),HN,HR(CONSENSUAL PATENT),HU(UTILITY MODEL),ID,IL,IN,IS,JP(UTILITY MODEL),KE(UTILITY MODEL),KG(UTILITY MODEL),KM,KN,KP(INVENTOR'S CERTIFICATE)(UTILITY MODEL),KR(UTILITY MODEL),KZ(PROVISIONAL PATENT)(UTILITY MODEL),LA,LC,LK,LR,LS(UTILITY MODEL),LT,LU,LY,MA,MD(UTILITY MODEL),ME,MG,MK,MN,MW,MX(UTILITY MODEL),MY(UTILITY-INNOVATION),MZ(UTILITY MODEL),NA,NG,NI(UTILITY MODEL),NO,NZ,OM(UTILITY MODEL),PG,PH(UTILITY MODEL),PL(UTILITY MODEL),PT(UTILITY MODEL),RO,RS(PETTY PATENT),RU(UTILITY MODEL),SC,SD,SE,SG,SK(UTILITY MODEL),SL(UTILITY MODEL),SM,ST,SV(UTILITY MODEL),SY,TJ(UTILITY MODEL),TM(PROVISIONAL PATENT),TN,TR(UTILITY MODEL),TT(UTILITY CERTIFICATE),TZ,UA(UTILITY MODEL),UG(UTILITY CERTIFICATE),US,UZ(UTILITY MODEL),VC(UTILITY CERTIFICATE),VN(PATENT FOR UTILITY SOLUTION),ZA,ZM,ZW,EP(AT,BE,BG,CH,CY,CZ,DE,DK,EE,ES,FI,FR,GB,GR,HR,HU,IE,IS,IT,LT,LU,LV,MC,MK,MT,NL,NO,PL,PT,RO,SE,SI,SK,TR),OA(BF(UTILITY MODEL),BJ(UTILITY MODEL),CF(UTILITY MODEL),CG(UTILITY MODEL),CI(UTILITY MODEL),CM(UTILITY MODEL),GA(UTILITY MODEL),GN(UTILITY MODEL),GQ(UTILITY MODEL),GW(UTILITY MODEL),ML(UTILITY MODEL),MR(UTILITY MODEL),NE(UTILITY MODEL),SN(UTILITY MODEL),TD(UTILITY MODEL),TG(UTILITY MODEL)),AP(BW(UTILITY MODEL),GH(UTILITY MODEL),GM(UTILITY MODEL),KE(UTILITY MODEL),LS(UTILITY MODEL),MW(UTILITY MODEL),MZ(UTILITY MODEL),NA(UTILITY MODEL),SD(UTILITY MODEL),SL(UTILITY MODEL),SZ(UTILITY MODEL),TZ(UTILITY MODEL),UG(UTILITY MODEL),ZM(UTILITY MODEL),ZW(UTILITY MODEL)),EA(AM,AZ,BY,KG,KZ,MD,RU,TJ,TM)
ライセンスをご希望の方、特許の内容に興味を持たれた方は、下記までご連絡ください

PAGE TOP

close
close
close
close
close
close