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MULTIPLE-CHANNEL SELF-ALIGNMENT TRANSISTOR FABRICATED BY DOUBLE SELF-ALIGNMENT PROCESS AND ITS MANUFACTURING METHOD

外国特許コード F110002763
整理番号 S2007-1125-C0
掲載日 2011年4月13日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2008JP063887
国際公開番号 WO 2009/031377
国際出願日 平成20年8月1日(2008.8.1)
国際公開日 平成21年3月12日(2009.3.12)
優先権データ
  • 特願2007-228080 (2007.9.3) JP
発明の名称 (英語) MULTIPLE-CHANNEL SELF-ALIGNMENT TRANSISTOR FABRICATED BY DOUBLE SELF-ALIGNMENT PROCESS AND ITS MANUFACTURING METHOD
発明の概要(英語) A multiple-channel self-alignment transistor fabricated through double self-alignment process by sequentially determining the positions of the gate, drain, and source electrodes by two back exposures, having a vertical structure using a comb gate electrode, and having multiple short channels and its manufacturing method are provided. A multiple-channel self-alignment transistor fabricated by a double self-alignment process comprises opaque gate electrodes (11) of a comb shape formed on a substrate (10), an insulating film (21) formed over the opaque gate electrodes (11), a transparent drain electrode (12) formed by a first back exposure through the substrate (10) between the comb opaque gate electrodes (11), transparent source electrodes (13) formed above an insulating film (21a) formed thereon and the comb opaque gate electrodes (11) by a second back exposure through the substrate (10), and a semiconductor (31) formed thereon.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • National University Corporation University of Toyama
  • 発明者(英語)
  • OKADA, Hiroyuki
  • NAKA, Shigeki
国際特許分類(IPC)
指定国 AE(UTILITY MODEL),AG,AL(UTILITY MODEL),AM(PROVISIONAL PATENT)(UTILITY MODEL),AO(UTILITY MODEL),AT(UTILITY MODEL),AU,AZ(UTILITY MODEL),BA,BB,BG(UTILITY MODEL),BH(UTILITY MODEL),BR(UTILITY MODEL),BW(UTILITY MODEL),BY(UTILITY MODEL),BZ(UTILITY MODEL),CA,CH,CN(UTILITY MODEL),CO(UTILITY MODEL),CR(UTILITY MODEL),CU(INVENTOR'S CERTIFICATE),CZ(UTILITY MODEL),DE(UTILITY MODEL),DK(UTILITY MODEL),DM(UTILITY MODEL),DO(UTILITY MODEL),DZ,EC(UTILITY MODEL),EE(UTILITY MODEL),EG(UTILITY MODEL),ES(UTILITY MODEL),FI(UTILITY MODEL),GB,GD,GE(UTILITY MODEL),GH(UTILITY CERTIFICATE),GM,GT(UTILITY MODEL),HN,HR(CONSENSUAL PATENT),HU(UTILITY MODEL),ID,IL,IN,IS,JP(UTILITY MODEL),KE(UTILITY MODEL),KG(UTILITY MODEL),KM,KN,KP(INVENTOR'S CERTIFICATE)(UTILITY MODEL),KR(UTILITY MODEL),KZ(PROVISIONAL PATENT)(UTILITY MODEL),LA,LC,LK,LR,LS(UTILITY MODEL),LT,LU,LY,MA,MD(UTILITY MODEL),ME(PETTY PATENT),MG,MK,MN,MW,MX(UTILITY MODEL),MY(UTILITY-INNOVATION),MZ(UTILITY MODEL),NA,NG,NI(UTILITY MODEL),NO,NZ,OM(UTILITY MODEL),PG,PH(UTILITY MODEL),PL(UTILITY MODEL),PT(UTILITY MODEL),RO,RS(PETTY PATENT),RU(UTILITY MODEL),SC,SD,SE,SG,SK(UTILITY MODEL),SL(UTILITY MODEL),SM,ST,SV(UTILITY MODEL),SY,TJ(UTILITY MODEL),TM(PROVISIONAL PATENT),TN,TR(UTILITY MODEL),TT(UTILITY CERTIFICATE),TZ,UA(UTILITY MODEL),UG(UTILITY CERTIFICATE),US,UZ(UTILITY MODEL),VC(UTILITY CERTIFICATE),VN(PATENT FOR UTILITY SOLUTION),ZA,ZM,ZW,EP(AT,BE,BG,CH,CY,CZ,DE,DK,EE,ES,FI,FR,GB,GR,HR,HU,IE,IS,IT,LT,LU,LV,MC,MT,NL,NO,PL,PT,RO,SE,SI,SK,TR),OA(BF(UTILITY MODEL),BJ(UTILITY MODEL),CF(UTILITY MODEL),CG(UTILITY MODEL),CI(UTILITY MODEL),CM(UTILITY MODEL),GA(UTILITY MODEL),GN(UTILITY MODEL),GQ(UTILITY MODEL),GW(UTILITY MODEL),ML(UTILITY MODEL),MR(UTILITY MODEL),NE(UTILITY MODEL),SN(UTILITY MODEL),TD(UTILITY MODEL),TG(UTILITY MODEL)),AP(BW(UTILITY MODEL),GH(UTILITY MODEL),GM(UTILITY MODEL),KE(UTILITY MODEL),LS(UTILITY MODEL),MW(UTILITY MODEL),MZ(UTILITY MODEL),NA(UTILITY MODEL),SD(UTILITY MODEL),SL(UTILITY MODEL),SZ(UTILITY MODEL),TZ(UTILITY MODEL),UG(UTILITY MODEL),ZM(UTILITY MODEL),ZW(UTILITY MODEL)),EA(AM,AZ,BY,KG,KZ,MD,RU,TJ,TM)
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