TOP > 外国特許検索 > THIN NICKEL FILM, METHOD FOR FORMATION OF THE THIN NICKEL FILM, FERROMAGNETIC NANO-JUNCTION ELEMENT, PROCESS FOR PRODUCING THE FERROMAGNETIC NANO-JUNCTION ELEMENT, THIN METALLIC WIRE, AND PROCESS FOR PRODUCING THE THIN METALLIC WIRE

THIN NICKEL FILM, METHOD FOR FORMATION OF THE THIN NICKEL FILM, FERROMAGNETIC NANO-JUNCTION ELEMENT, PROCESS FOR PRODUCING THE FERROMAGNETIC NANO-JUNCTION ELEMENT, THIN METALLIC WIRE, AND PROCESS FOR PRODUCING THE THIN METALLIC WIRE 新技術説明会

外国特許コード F110002782
整理番号 S2009-0593-N0
掲載日 2011年4月15日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2008JP065924
国際公開番号 WO 2009/041239
国際出願日 平成20年8月28日(2008.8.28)
国際公開日 平成21年4月2日(2009.4.2)
優先権データ
  • 特願2007-248809 (2007.9.26) JP
  • 特願2008-066929 (2008.3.17) JP
発明の名称 (英語) THIN NICKEL FILM, METHOD FOR FORMATION OF THE THIN NICKEL FILM, FERROMAGNETIC NANO-JUNCTION ELEMENT, PROCESS FOR PRODUCING THE FERROMAGNETIC NANO-JUNCTION ELEMENT, THIN METALLIC WIRE, AND PROCESS FOR PRODUCING THE THIN METALLIC WIRE 新技術説明会
発明の概要(英語) A thin nickel film is formed, for example, to a thickness of not less than 2 nm, onto a polyethylene naphthalate substrate, for example, by a vacuum deposition method. Two laminates each comprising the thin nickel film formed on the polyethylene naphthalate substrate are provided. These two laminates are joined to each other while crossing in such a manner that an edge of one of the thin nickel film faces an edge of the other thin nickel film to constitute a magnetoresistance effect element using ferromagnetic nano-junction.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITY
  • 発明者(英語)
  • KAIJU, Hideo / 2-5-5-802, Shinsenri higashimachi, Toyonaka-shi, Osaka, 5600082 (JP)
  • ISHIMARU, Manabu
  • HIROTSU, Yoshihiko
  • ONO, Akito
  • ISHIBASHI, Akira
国際特許分類(IPC)
指定国 AE(UTILITY MODEL),AG,AL(UTILITY MODEL),AM(PROVISIONAL PATENT)(UTILITY MODEL),AO(UTILITY MODEL),AT(UTILITY MODEL),AU,AZ(UTILITY MODEL),BA,BB,BG(UTILITY MODEL),BH(UTILITY MODEL),BR(UTILITY MODEL),BW(UTILITY MODEL),BY(UTILITY MODEL),BZ(UTILITY MODEL),CA,CH,CN(UTILITY MODEL),CO(UTILITY MODEL),CR(UTILITY MODEL),CU(INVENTOR'S CERTIFICATE),CZ(UTILITY MODEL),DE(UTILITY MODEL),DK(UTILITY MODEL),DM(UTILITY MODEL),DO(UTILITY MODEL),DZ,EC(UTILITY MODEL),EE(UTILITY MODEL),EG(UTILITY MODEL),ES(UTILITY MODEL),FI(UTILITY MODEL),GB,GD,GE(UTILITY MODEL),GH(UTILITY CERTIFICATE),GM,GT(UTILITY MODEL),HN,HR(CONSENSUAL PATENT),HU(UTILITY MODEL),ID,IL,IN,IS,JP(UTILITY MODEL),KE(UTILITY MODEL),KG(UTILITY MODEL),KM,KN,KP(INVENTOR'S CERTIFICATE)(UTILITY MODEL),KR(UTILITY MODEL),KZ(PROVISIONAL PATENT)(UTILITY MODEL),LA,LC,LK,LR,LS(UTILITY MODEL),LT,LU,LY,MA,MD(UTILITY MODEL),ME(PETTY PATENT),MG,MK,MN,MW,MX(UTILITY MODEL),MY(UTILITY-INNOVATION),MZ(UTILITY MODEL),NA,NG,NI(UTILITY MODEL),NO,NZ,OM(UTILITY MODEL),PG,PH(UTILITY MODEL),PL(UTILITY MODEL),PT(UTILITY MODEL),RO,RS(PETTY PATENT),RU(UTILITY MODEL),SC,SD,SE,SG,SK(UTILITY MODEL),SL(UTILITY MODEL),SM,ST,SV(UTILITY MODEL),SY,TJ(UTILITY MODEL),TM(PROVISIONAL PATENT),TN,TR(UTILITY MODEL),TT(UTILITY CERTIFICATE),TZ,UA(UTILITY MODEL),UG(UTILITY CERTIFICATE),US,UZ(UTILITY MODEL),VC(UTILITY CERTIFICATE),VN(PATENT FOR UTILITY SOLUTION),ZA,ZM,ZW,EP(AT,BE,BG,CH,CY,CZ,DE,DK,EE,ES,FI,FR,GB,GR,HR,HU,IE,IS,IT,LT,LU,LV,MC,MT,NL,NO,PL,PT,RO,SE,SI,SK,TR),OA(BF(UTILITY MODEL),BJ(UTILITY MODEL),CF(UTILITY MODEL),CG(UTILITY MODEL),CI(UTILITY MODEL),CM(UTILITY MODEL),GA(UTILITY MODEL),GN(UTILITY MODEL),GQ(UTILITY MODEL),GW(UTILITY MODEL),ML(UTILITY MODEL),MR(UTILITY MODEL),NE(UTILITY MODEL),SN(UTILITY MODEL),TD(UTILITY MODEL),TG(UTILITY MODEL)),AP(BW(UTILITY MODEL),GH(UTILITY MODEL),GM(UTILITY MODEL),KE(UTILITY MODEL),LS(UTILITY MODEL),MW(UTILITY MODEL),MZ(UTILITY MODEL),NA(UTILITY MODEL),SD(UTILITY MODEL),SL(UTILITY MODEL),SZ(UTILITY MODEL),TZ(UTILITY MODEL),UG(UTILITY MODEL),ZM(UTILITY MODEL),ZW(UTILITY MODEL)),EA(AM,AZ,BY,KG,KZ,MD,RU,TJ,TM)
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