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METHOD FOR FORMING BORON-CONTAINING THIN FILM AND MULTILAYER STRUCTURE

外国特許コード F110002831
整理番号 S2010-0743-N0
掲載日 2011年5月2日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2009JP068206
国際公開番号 WO 2010/047375
国際出願日 平成21年10月22日(2009.10.22)
国際公開日 平成22年4月29日(2010.4.29)
優先権データ
  • 特願2008-272416 (2008.10.22) JP
  • 特願2008-272423 (2008.10.22) JP
  • 特願2008-272436 (2008.10.22) JP
  • 特願2008-272439 (2008.10.22) JP
発明の名称 (英語) METHOD FOR FORMING BORON-CONTAINING THIN FILM AND MULTILAYER STRUCTURE
発明の概要(英語) A method for forming a boron-containing thin film, wherein a uniform boron thin film with good adhesion can be formed on the surface of an object to be processed. Also disclosed is a multilayer structure. An electrolysis apparatus comprises a positive electrode (1), an object to be processed (2) serving as a negative electrode, an electrolysis vessel (4), and a molten salt electrolytic bath (5). A variable power supply (6) is connected between the positive electrode (1) and the object to be processed (2). The variable power supply (6) is configured so that the voltage waveform or current waveform can be changed during the electrolysis process. By carrying out the electrolysis by flowing a current having an adequate pulse waveform in the molten salt, a uniform boron thin film (3) can be formed even inside the object to be processed (2), which has a complicated shape.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • ROHM CO., LTD.
  • THE DOSHISHA
  • I'MSEP CO., Ltd.
  • 発明者(英語)
  • TSURUMI, Naoaki
  • ITO, Yasuhiko
  • TOKUSHIGE, Manabu
  • SATOMI, Tsuyoshi
  • NISHIKIORI, Tokujiro
  • TSUJIMURA, Hiroyuki
国際特許分類(IPC)
指定国 AE(UTILITY MODEL),AG,AL(UTILITY MODEL),AM(PROVISIONAL PATENT)(UTILITY MODEL),AO(UTILITY MODEL),AT(UTILITY MODEL),AU,AZ(UTILITY MODEL),BA,BB,BG(UTILITY MODEL),BH(UTILITY MODEL),BR(UTILITY MODEL),BW(UTILITY MODEL),BY(UTILITY MODEL),BZ(UTILITY MODEL),CA,CH,CL(UTILITY MODEL),CN(UTILITY MODEL),CO(UTILITY MODEL),CR(UTILITY MODEL),CU(INVENTOR'S CERTIFICATE),CZ(UTILITY MODEL),DE(UTILITY MODEL),DK(UTILITY MODEL),DM,DO(UTILITY MODEL),DZ,EC(UTILITY MODEL),EE(UTILITY MODEL),EG(UTILITY MODEL),ES(UTILITY MODEL),FI(UTILITY MODEL),GB,GD,GE(UTILITY MODEL),GH(UTILITY CERTIFICATE),GM,GT(UTILITY MODEL),HN,HR(CONSENSUAL PATENT),HU(UTILITY MODEL),ID,IL,IN,IS,JP(UTILITY MODEL),KE(UTILITY MODEL),KG(UTILITY MODEL),KM,KN,KP(INVENTOR'S CERTIFICATE)(UTILITY MODEL),KR(UTILITY MODEL),KZ(PROVISIONAL PATENT)(UTILITY MODEL),LA,LC,LK,LR,LS(UTILITY MODEL),LT,LU,LY,MA,MD(UTILITY MODEL),ME,MG,MK,MN,MW,MX(UTILITY MODEL),MY(UTILITY-INNOVATION),MZ(UTILITY MODEL),NA,NG,NI(UTILITY MODEL),NO,NZ,OM(UTILITY MODEL),PE(UTILITY MODEL),PG,PH(UTILITY MODEL),PL(UTILITY MODEL),PT(UTILITY MODEL),RO,RS(PETTY PATENT),RU(UTILITY MODEL),SC,SD,SE,SG,SK(UTILITY MODEL),SL(UTILITY MODEL),SM,ST,SV(UTILITY MODEL),SY,TJ(UTILITY MODEL),TM(PROVISIONAL PATENT),TN,TR(UTILITY MODEL),TT(UTILITY CERTIFICATE),TZ,UA(UTILITY MODEL),UG(UTILITY CERTIFICATE),US,UZ(UTILITY MODEL),VC(UTILITY CERTIFICATE),VN(PATENT FOR UTILITY SOLUTION),ZA,ZM,ZW,EP(AT,BE,BG,CH,CY,CZ,DE,DK,EE,ES,FI,FR,GB,GR,HR,HU,IE,IS,IT,LT,LU,LV,MC,MK,MT,NL,NO,PL,PT,RO,SE,SI,SK,SM,TR),OA(BF(UTILITY MODEL),BJ(UTILITY MODEL),CF(UTILITY MODEL),CG(UTILITY MODEL),CI(UTILITY MODEL),CM(UTILITY MODEL),GA(UTILITY MODEL),GN(UTILITY MODEL),GQ(UTILITY MODEL),GW(UTILITY MODEL),ML(UTILITY MODEL),MR(UTILITY MODEL),NE(UTILITY MODEL),SN(UTILITY MODEL),TD(UTILITY MODEL),TG(UTILITY MODEL)),AP(BW(UTILITY MODEL),GH(UTILITY MODEL),GM(UTILITY MODEL),KE(UTILITY MODEL),LS(UTILITY MODEL),MW(UTILITY MODEL),MZ(UTILITY MODEL),NA(UTILITY MODEL),SD(UTILITY MODEL),SL(UTILITY MODEL),SZ(UTILITY MODEL),TZ(UTILITY MODEL),UG(UTILITY MODEL),ZM(UTILITY MODEL),ZW(UTILITY MODEL)),EA(AM,AZ,BY,KG,KZ,MD,RU,TJ,TM)

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