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SPUTTERING SYSTEM FOR DEPOSITING THIN FILM AND METHOD FOR DEPOSITING THIN FILM

外国特許コード F110002905
整理番号 S2008-0851-C0
掲載日 2011年5月9日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2009JP058976
国際公開番号 WO 2009/139434
国際出願日 平成21年5月14日(2009.5.14)
国際公開日 平成21年11月19日(2009.11.19)
優先権データ
  • 特願2008-127998 (2008.5.15) JP
  • 特願2008-298064 (2008.11.21) JP
  • 特願2009-016289 (2009.1.28) JP
発明の名称 (英語) SPUTTERING SYSTEM FOR DEPOSITING THIN FILM AND METHOD FOR DEPOSITING THIN FILM
発明の概要(英語) Provided are a facing target sputtering system and a method effective for each material wherein the pattern of a magnetic line of force can be varied easily between facing targets, and a plurality of types of sputtering, e.g. facing-mode facing target sputtering, compound-(facing plus magnetron) mode facing target sputtering, and the like, can be carried out easily. A sputtering system for depositing a thin film wherein a pair of target holders (2) each holding a target (1) are arranged so as to face each other, wherein a magnetic pole group consisting of a plurality of magnetic pole elements having at least different directions of magnetic pole is arranged on the back side of each target holder, the magnetic pole element is any of a permanent magnet (4), yokes (7, 8), an electromagnet (13), or a combination thereof, and a flux line pattern control means is provided for varying a flux line pattern (5) between targets arranged opposite to each other by moving at least a part of the magnetic pole elements or varying at least the strength or direction of magnetic field.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • YAMAGUCHI UNIVERSITY
  • 発明者(英語)
  • MOROHASHI, Shinichi
国際特許分類(IPC)
指定国 AE(UTILITY MODEL),AG,AL(UTILITY MODEL),AM(PROVISIONAL PATENT)(UTILITY MODEL),AO(UTILITY MODEL),AT(UTILITY MODEL),AU,AZ(UTILITY MODEL),BA,BB,BG(UTILITY MODEL),BH(UTILITY MODEL),BR(UTILITY MODEL),BW(UTILITY MODEL),BY(UTILITY MODEL),BZ(UTILITY MODEL),CA,CH,CN(UTILITY MODEL),CO(UTILITY MODEL),CR(UTILITY MODEL),CU(INVENTOR'S CERTIFICATE),CZ(UTILITY MODEL),DE(UTILITY MODEL),DK(UTILITY MODEL),DM(UTILITY MODEL),DO(UTILITY MODEL),DZ,EC(UTILITY MODEL),EE(UTILITY MODEL),EG(UTILITY MODEL),ES(UTILITY MODEL),FI(UTILITY MODEL),GB,GD,GE(UTILITY MODEL),GH(UTILITY CERTIFICATE),GM,GT(UTILITY MODEL),HN,HR(CONSENSUAL PATENT),HU(UTILITY MODEL),ID,IL,IN,IS,JP(UTILITY MODEL),KE(UTILITY MODEL),KG(UTILITY MODEL),KM,KN,KP(INVENTOR'S CERTIFICATE)(UTILITY MODEL),KR(UTILITY MODEL),KZ(PROVISIONAL PATENT)(UTILITY MODEL),LA,LC,LK,LR,LS(UTILITY MODEL),LT,LU,LY,MA,MD(UTILITY MODEL),ME,MG,MK,MN,MW,MX(UTILITY MODEL),MY(UTILITY-INNOVATION),MZ(UTILITY MODEL),NA,NG,NI(UTILITY MODEL),NO,NZ,OM(UTILITY MODEL),PG,PH(UTILITY MODEL),PL(UTILITY MODEL),PT(UTILITY MODEL),RO,RS(PETTY PATENT),RU(UTILITY MODEL),SC,SD,SE,SG,SK(UTILITY MODEL),SL(UTILITY MODEL),SM,ST,SV(UTILITY MODEL),SY,TJ(UTILITY MODEL),TM(PROVISIONAL PATENT),TN,TR(UTILITY MODEL),TT(UTILITY CERTIFICATE),TZ,UA(UTILITY MODEL),UG(UTILITY CERTIFICATE),US,UZ(UTILITY MODEL),VC(UTILITY CERTIFICATE),VN(PATENT FOR UTILITY SOLUTION),ZA,ZM,ZW,EP(AT,BE,BG,CH,CY,CZ,DE,DK,EE,ES,FI,FR,GB,GR,HR,HU,IE,IS,IT,LT,LU,LV,MC,MK,MT,NL,NO,PL,PT,RO,SE,SI,SK,TR),OA(BF(UTILITY MODEL),BJ(UTILITY MODEL),CF(UTILITY MODEL),CG(UTILITY MODEL),CI(UTILITY MODEL),CM(UTILITY MODEL),GA(UTILITY MODEL),GN(UTILITY MODEL),GQ(UTILITY MODEL),GW(UTILITY MODEL),ML(UTILITY MODEL),MR(UTILITY MODEL),NE(UTILITY MODEL),SN(UTILITY MODEL),TD(UTILITY MODEL),TG(UTILITY MODEL)),AP(BW(UTILITY MODEL),GH(UTILITY MODEL),GM(UTILITY MODEL),KE(UTILITY MODEL),LS(UTILITY MODEL),MW(UTILITY MODEL),MZ(UTILITY MODEL),NA(UTILITY MODEL),SD(UTILITY MODEL),SL(UTILITY MODEL),SZ(UTILITY MODEL),TZ(UTILITY MODEL),UG(UTILITY MODEL),ZM(UTILITY MODEL),ZW(UTILITY MODEL)),EA(AM,AZ,BY,KG,KZ,MD,RU,TJ,TM)
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