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Point contact array, not circuit, and electronic circuit using the same

外国特許コード F110003110
整理番号 A041-39US3
掲載日 2011年6月9日
出願国 アメリカ合衆国
出願番号 16503705
公報番号 20050243844
公報番号 7525410
出願日 平成17年6月24日(2005.6.24)
公報発行日 平成17年11月3日(2005.11.3)
公報発行日 平成21年4月28日(2009.4.28)
国際出願番号 JP2001009464
国際公開番号 WO2002037572
国際出願日 平成13年10月29日(2001.10.29)
国際公開日 平成14年5月10日(2002.5.10)
優先権データ
  • 特願2000-334686 (2000.11.1) JP
  • 特願2001-138103 (2001.5.9) JP
  • 10/363,259 (2003.3.7) US
  • 2001JP009464 (2001.10.29) WO
発明の名称 (英語) Point contact array, not circuit, and electronic circuit using the same
発明の概要(英語) There are provided a point contact array, in which a plurality of point contacts are arranged, each point contact electrically and reversibly controlling conductance between electrodes and being applicable to an arithmetic circuit, a logic circuit, and a memory device, a NOT circuit, and an electronic circuit using the same.
A circuit includes a plurality of point contacts each composed of a first electrode made of a compound conductive material having ionic conductivity and electronic conductivity and a second electrode made of a conductive substance.
The conductance of each point contact is controlled to realize the circuit.
Ag2S, Ag2Se, Cu2S, or Cu2Se is preferably used as the compound conductive material.
When a semiconductor or insulator material is interposed between the electrodes, a crystal or an amorphous material of GeSx, GeSex, GeTex, or WOx (0<x<100) is preferably used as the semiconductor or insulator material.
A NOT circuit is realized using a device which includes an atomic switch serving as a two-terminal device, the device including a first electrode made of a compound conductive material having ionic conductivity and electronic conductivity and a second electrode made of a conductive substance, and capable of controlling conductance between the electrodes.
従来技術、競合技術の概要(英語) BACKGROUND ART
As related arts [1], methods for forming a point contact to control conductance are disclosed by, for example, J. K. Gimzewski and R. Moller: Phys.
Rev. B36, p 1284, 1987, J. L. Costa-Kramer, N. Garcia, P. Garcia-Mochales, P. A. Serena, M. I. Marques, and A. Corrcia: Phys.
Rev. B55, p 5416, 1997, and H. Ohnishi, Y. Kondo, and K. Takayanagi: Nature, Vol. 395, p 780, 1998.
Each of these methods requires a piezo device in order to form and control each point contact.
In other words, a metallic probe equipped with the piezo device is positioned with respect to an opposite electrode with high precision by driving the piezo device, thus forming a point contact between the probe and the opposite electrode.
The state thereof is controlled.
In addition to these arts, as a related art [2], a method for controlling conductance of each point contact, the method using organic molecules is disclosed by C. P. Collier et al.: Science, Vol. 285, p 391, 1999.
According to this method, the conductivity of rotaxane molecules of one molecule thickness sandwiched by electrodes facing each other is changed by applying high voltage between the electrodes.
In other words, the rotaxane molecules, sandwiched between the electrodes, initially exhibit the conductivity.
When a predetermined or higher voltage of a certain polarity is applied, the molecules are oxidized to reduce the conductivity, so that the electrodes are isolated from each other.
[3] Hitherto, it is known that an AND circuit and an OR circuit can be formed using a diode serving as a two-terminal device.
On the other hand, it is also well-known that a NOT circuit cannot be formed using only the diode.
In other words, the NOT circuit cannot be formed using only the conventional two-terminal devices.
Accordingly, the formation of the NOT circuit requires a transistor serving as a three-terminal device.
All of logic circuits can be constructed using the combination of the AND circuit, the OR circuit, and the NOT circuit.
In other words, a three-terminal circuit is indispensable to the formation of an arbitrary logic circuit.
This fact is described in detail in, for example, "NYUMON ELECTRONICS KOHZA (Library of Introduction to Electronics) Digital Circuit", Vol. 2, pages 1 to 7, published by Nikkan Kogyo Shinbun Co., Ltd. (I).
Nowadays as the integration of silicon devices is approaching its limit, new nanometer-sized devices such as molecular devices are being developed.
For example, the result of the experiment of a transistor using a carbon nanotube is described in Nature, Vol. 393, pages 49 to 50, 1998 (II).

特許請求の範囲(英語) [claim1]
1. An electric circuit comprising: a plurality of atomic switches, each atomic switch including a first electrode made of a compound conductive material which is Ag2S, Ag2Se, Cu2S, or Cu2Se, including mobile ions, and having ionic conductivity and electric conductivity, anda second electrode made of a conductive substance configured to control conductance between the first and second electrodes, and to be spaced apart from the first electrode, wherein the mobile ions can form a bridge between the first and second electrodesat least one NOT circuit, each NOT circuit including one of the plurality of atomic switches, anda resistor and a capacitor, each of which serves as a two-terminal device;
at least one AND circuit configured to use one of the plurality of the atomic switches;
and
an OR circuit configured to use one of the plurality of the atomic switches.
[claim2]
2. The electric circuit according to claim 1, wherein the at least one NOT circuit includes a diode in addition to the resistor and the capacitor.
[claim3]
3. The electric circuit according to claim 2, wherein a voltage to be applied to one of the plurality of atomic switches, used by the at least one NOT circuit, to control the conductance between the electrodes of the one of the plurality of atomic switches used by the at least one NOT circuit, is controlled through the capacitor.
[claim4]
4. The electric circuit according to claim 1, wherein the at least one AND circuit includes a first AND circuit configured to use one of the plurality of atomic switches, the one of the plurality of atomic switches used by the first AND circuit being connected to a first NOT circuit comprised in the at least one NOT circuit, wherein the first NOT circuit is connected to a first input terminal;
a second AND circuit configured to use one of the plurality of atomic switches, the one of the plurality of atomic switches used by the second AND circuit being connected to a second NOT circuit comprised in the at least one NOT circuit, wherein the second NOT circuit is connected to a second input terminal;
and
a third AND circuit configured to use one of the plurality of atomic switches, wherein the one of the plurality of atomic switches used by the third AND circuit is configured to include a second output terminal, and to be connected to the first and second input terminals;
and
the OR circuit is configured to use one of the plurality of atomic switches, wherein the one of the plurality of atomic switches used by the OR circuit is configured to include a first output terminal, the first output terminal being connected to each output of the first and second AND circuits.
  • 発明者/出願人(英語)
  • AONO MASAKAZU
  • HASEGAWA TSUYOSHI
  • TERABE KAZUYA
  • NAKAYAMA TOMONOBU
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
米国特許分類/主・副
  • 338/309
  • 257/533
  • 338/307
参考情報 (研究プロジェクト等) CREST Quantum Effects and Related Physical Phenomena AREA
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