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Quantum dot manipulating method and quantum dot production/manipulation apparatus

外国特許コード F110003352
整理番号 A241-31US1
掲載日 2011年6月23日
出願国 アメリカ合衆国
出願番号 37958309
公報番号 20090255807
公報番号 8357272
出願日 平成21年2月25日(2009.2.25)
公報発行日 平成21年10月15日(2009.10.15)
公報発行日 平成25年1月22日(2013.1.22)
国際出願番号 JP2005004118
国際公開番号 WO2005087654
国際出願日 平成17年3月9日(2005.3.9)
国際公開日 平成17年9月22日(2005.9.22)
優先権データ
  • 特願2004-071621 (2004.3.12) JP
  • 10/592,491 (2005.3.9) US
  • 2005JP004118 (2005.3.9) WO
発明の名称 (英語) Quantum dot manipulating method and quantum dot production/manipulation apparatus
発明の概要(英語) A quantum dot manipulating method and a generation/manipulation apparatus are provided which can control the size of a large number of generated quantum dots on or below the order of percent which is required for optical applications of the dots.
Quantum dots are generated by shining a dot production laser (4a) onto a solid object (3) in a quantum dot production/manipulation apparatus (1) containing superfluid helium (7) therein.
A dot manipulation laser (5a) is shone onto the generated quantum dots to manipulate the quantum dots.
従来技術、競合技術の概要(英語) BACKGROUND ART
A lot of research work is in progress to investigate, and find applications (e.g., super low threshold laser and quantum entanglement) for the peculiar physical properties of quantum dots (especially, semiconductor quantum dots) as a typical example of nanosized structures.
Typically, quantum dots are produced by (1) self-assembly into particles in chemical reaction or (2) MBE. The latter is a method of growing an extremely thin crystal film (equivalent to a thickness of a few atoms) on a wafer of a different semiconductor, such as silicon.
It is expected that the quantum dot will find applications in wide ranges of fields from computer-related fields to biotechnology.
To use quantum dots in these fields, preferably, they have uniform diameters.
Challenges for the applications include the development of technology that controls quantum dot size and arrangement.
A known technology that can control the size and arrangement of generated quantum dots is (3) a combination of MBE and a probe microscope for those quantum dots produced by one of the methods (Fujitsu Corp.; see "Proceeding of International Conference on the Physics of Semiconductors 2002").
However, with this conventional technology, it is difficult to manipulate a large number of generated quantum dots efficiently.
Specifically, methods (1) and (2) are hardly capable of controlling the variations in the diameter of a large number of generated quantum dots to a value on the order of a few percent or less which is required for optical applications of quantum dots.
In method (3), MBE is used in combination with a probe microscope.
An advantage of the method is that nanometer-sized quantum dots can be directly produced by manipulating the probe.
Each probe can however manipulate only one dot.
No more than a few probes can be used at a time.
The fastest probe microscope normally takes about 0.1 seconds to make a single scan.
Assuming, as an example, a process time of 0.1 seconds for each dot and the simultaneous use of 10 probes, about 100 dots can be processed in one second.
This translates into the need for a fairly extended period of time if one wants to control variations in diameter of numerous quantum dots with method (3).
The process efficiency is low.
The present invention, conceived in view of these issues, has an objective to provide a semiconductor quantum dot manipulating method and production/manipulation apparatus capable of controlling the size of a large number of generated semiconductor quantum dots to a value on the order of a few percent or less which is required for optical applications of the dots.

特許請求の範囲(英語) [claim1]
1. A quantum dot production/manipulation apparatus comprising: a housing having an internal space to enable generation and manipulation of quantum dots producing a quantum effect, wherein the internal space is adapted to hold superfluid helium therein;
a solid object holding section, provided inside the superfluid helium in the housing, to hold a solid object of a quantum dot material;
a first and second laser source, comprising:
a dot production laser source irradiating, with a laser emitted to an inside of the housing, a solid object held in the solid object holding section, in the superfluid helium, to generate quantum dots in the superfluid helium by laser sputtering; and
a dot manipulation laser source irradiating, with a laser emitted to the inside of the housing, the generated quantum dots in the superfluid helium to manipulate the quantum dots.
[claim2]
2. The apparatus of claim 1, wherein the dot manipulation laser source emits light which has frequencies which overlap at least one of frequency ranges, each range being of twice the full width at half maximum for one of peaks in a frequency spectrum of radiation force exerted on the quantum dots which correspond to the resonance frequencies of electronic transition and/or of Mie scattering modulated by electronic transition, etc.
[claim3]
3. The apparatus of claim 1, wherein the dot manipulation laser source is adapted to emit light with sufficient power to exert radiation force of which movement of the quantum dots is controllable by the radiation force to halt the quantum dots from falling, reduce speed, capture, transport, etc.
[claim4]
4. The apparatus of claim 1, wherein the housing contains therein a substrate to which the quantum dots manipulated with the light emitted from the dot manipulation laser source are integrated and/or fixed.
[claim5]
5. The apparatus of claim 1, wherein the housing is a helium cryostat.
[claim6]
6. The quantum dot production/manipulation apparatus as set forth in claim 1, wherein: the solid object holding section is provided in an upper part of the internal spacing, and is arranged so that the quantum dots which are generated by the laser sputtering downwardly fall in the superfluid helium;
the dot manipulation laser source upwardly shines the laser, from a lower part of the inner space, onto the quantum dots which downwardly falls, so as to halt some of the quantum dots from falling, reduce speed, capture, and transport.
[claim7]
7. The quantum dot production/manipulation apparatus as set forth in claim 1, wherein: the dot production laser source causes generation of the quantum dots in the superfluid helium, wherein at least one of sizes, shapes, internal structures of the quantum dots is different from each other;
the dot manipulation laser source shines the laser onto the quantum dots in such a manner that a quantum dot in resonance with the laser is selected from the quantum dots and manipulated in the superfluid helium.
[claim8]
8. The quantum dot production/manipulation apparatus as set forth in claim 7, wherein: a quantum dot that is in resonance with the laser and differs from the others of the quantum dots in size or shape on the order of 1 nm is selected from the quantum dots.
[claim9]
9. The quantum dot production/manipulation apparatus as set forth in claim 7, wherein: the housing contains therein a substrate to which the quantum dots manipulated with the laser emitted from the dot manipulation laser source are integrated and/or fixed; and
the quantum dot in resonance with the laser is collected from the superfluid helium gas by integrating and/or fixing, to the substrate, the quantum dots manipulated with the laser emitted from the dot manipulation laser source.
[claim10]
10. The quantum dot production/manipulation apparatus as set forth in claim 9, wherein: the substrate has a hole or a groove provided therein for use in manipulation of the quantum dot that is in resonance with the laser.
  • 発明者/出願人(英語)
  • ITOH TADASHI
  • ASHIDA MASAAKI
  • ISHIHARA HAJIME
  • IIDA TAKUYA
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
米国特許分類/主・副
  • 204/298.26
  • 204/298.01
  • 204/298.02
  • 204/298.21
参考情報 (研究プロジェクト等) CREST Creation of Nanodevices and System Based on New Physical Phenomena and Functional Principles AREA
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