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DNA SENSOR

外国特許コード F110003435
整理番号 A111-43WO
掲載日 2011年6月27日
出願国 欧州特許庁(EPO)
出願番号 05768375
公報番号 1788383
公報番号 1788383
出願日 平成17年8月4日(2005.8.4)
公報発行日 平成19年5月23日(2007.5.23)
公報発行日 平成29年4月5日(2017.4.5)
国際出願番号 JP2005014283
国際公開番号 WO2006025180
国際出願日 平成17年8月4日(2005.8.4)
国際公開日 平成18年3月9日(2006.3.9)
優先権データ
  • 特願2004-250303 (2004.8.30) JP
  • JP2005014283 (2005.8.4) WO
発明の名称 (英語) DNA SENSOR
発明の概要(英語) (EP1788383)
A DNA sensor is provided which is capable of identifying unknown DNA with enhanced detection sensitivity of the hybridization.
A p-channel field-effect transistor having an electrolyte solution gate 8 and having as a p-channel 5 a diamond surface 2 which contains a mixture of at least a hydrogen-terminated surface and a surface terminated with an amino group or a molecule with an amino group is configured along with a probe DNA 11 constituted of a single-stranded DNA with known nucleotide sequence which is directly immobilized by a linker to the diamond surface 2 and with a target DNA constituted of an unknown single-stranded DNA which is dropped on the diamond surface 2.
When the target DNA is in complementary relationship to the probe DNA 11, negative electric charge of the phosphate group of a double-stranded DNA produced by the hybridization of the probe DNA 11 with the target DNA both constituted of a single-stranded DNA is doubled, thereby resulting in increase of the hole density in the p-channel and shift of the threshold voltage of the p-channel field effect transistor toward positive direction.
By detecting this shift of the threshold voltage toward positive direction, an identification can be made on whether or not the target DNA is in complementary relationship to the probe DNA 11.
特許請求の範囲(英語) [claim1]
1. A DNA sensor operable to detect mismatched single nucleotide and triple nucleotides, comprising a p-channel field-effect transistor having as a gate (8) an electrolyte solution and having as a channel (5) a diamond surface (2) which contains a mixture of at least a hydrogen-terminated surface and an amino-terminated surface, the amino-terminated surface being terminated by an amino group or a molecule with an amino group, wherein the sensor is configured to: receive a probe DNA (11) constituted of a single-stranded DNA with known nucleotide sequence which is directly immobilized by a linker to the amino termination of the diamond surface (2); receive a target DNA constituted of an unknown single-stranded DNA which is dropped on the diamond surface (2); and set a temperature of the buffer solution to 40 deg.C or lower during hybridization to identify whether or not the target DNA is complementary to the probe DNA (11) by detecting a shift of the threshold voltage of the p-channel field effect transistor toward positive direction, the shift resulting from a double-stranded DNA produced by hybridization of the probe DNA (11) with the target DNA both constituted of the single-stranded DNA when the target DNA is complementary to the probe DNA (11).
[claim2]
2. A measuring method operable to detect mismatched single nucleotide and triple nucleotides using a DNA sensor, the sensor comprising a p-channel field-effect transistor having as a gate (8) an electrolyte solution and having as a channel (5) a diamond surface (2) which contains a mixture of at least a hydrogen-terminated surface and an amino-terminated surface, the amino-terminated surface being terminated by an amino group or a molecule with an amino group as an amino termination, the method comprising: directly immobilizing a probe DNA (11) constituted of a single-stranded DNA with known nucleotide sequence by a linker to the amino termination of the diamond surface (2); dropping a target DNA constituted of an unknown single-stranded DNA on the diamond surface (2); and identifying whether or not the target DNA is complementary to the probe DNA (11) by detecting a shift of the threshold voltage of the p-channel field effect transistor toward positive direction, the shift resulting from a double-stranded DNA produced by hybridization of the probe DNA (11) with the target DNA both constituted of the single-stranded DNA when the target DNA is complementary to the probe DNA (11), wherein: a temperature of the buffer solution is 40 deg.C or lower during hybridization.
[claim3]
3. The DNA sensor or method according to any preceding claim, wherein the diamond surface (2) contains an oxygen-terminated surface.
[claim4]
4. The DNA sensor or method according to any preceding claim, wherein the linker is: divalent or trivalent carboxylic acid or divalent or trivalent aldehyde.
[claim5]
5. The DNA sensor or method according to any preceding claim, further comprising the probe DNA (11) and the target DNA, wherein the density of the probe DNA is equal to or greater than 10 **10 cm **-2 and the concentration of the target DNA is from 10 **-12 M to 10 **-6 M.
[claim6]
6. The DNA sensor or method according to any preceding claim, wherein the shifting difference of the threshold voltage toward positive direction is detected as a change in the gate voltage under a constant drain current.
[claim7]
7. The DNA sensor or method according to any preceding claim, wherein the shifting difference of the threshold voltage toward positive direction is detected as a change in the drain current under a constant gate voltage.
[claim8]
8. The DNA sensor or method according to any preceding claim, wherein the shifting difference of the threshold voltage toward positive direction is detected as a change in the drain current under a constant drain voltage.
[claim9]
9. The DNA sensor or method according to any preceding claim, wherein the temperature of the buffer solution containing the electrolyte solution is 25 deg.C or lower during hybridization.
[claim10]
10. The DNA sensor or method according to any preceding claim, wherein an NaCl concentration of the buffer solution is between 0.3M to 0.01 M, and a Debye length is between 0.56nm to 3.04nm.
  • 出願人(英語)
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • KAWARADA HIROSHI
国際特許分類(IPC)
欧州特許分類/主・副
  • C12Q001/68B10A
  • G01N027/414
指定国 (EP1788383)
Contracting States: DE FR GB
参考情報 (研究プロジェクト等) CREST Function Evolution of Materials and Devices based on Electron/Photon Related Phenomena AREA
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