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Thermoelectric conversion material and production method for thermoelectric conversion material

外国特許コード F110003549
整理番号 BE06002WO
掲載日 2011年6月29日
出願国 アメリカ合衆国
出願番号 66775305
公報番号 20080210285
公報番号 9048380
出願日 平成17年11月15日(2005.11.15)
公報発行日 平成20年9月4日(2008.9.4)
公報発行日 平成27年6月2日(2015.6.2)
国際出願番号 JP2005020939
国際公開番号 WO2006054550
国際出願日 平成17年11月15日(2005.11.15)
国際公開日 平成18年5月26日(2006.5.26)
優先権データ
  • 特願2004-331756 (2004.11.16) JP
  • 2005JP020939 (2005.11.15) WO
発明の名称 (英語) Thermoelectric conversion material and production method for thermoelectric conversion material
発明の概要(英語) A thermoelectric conversion material having a novel composition is provided.
The thermoelectric conversion material comprises a first dielectric material layer, a second dielectric material layer, and an electron localization layer that is present between the first dielectric material layer and the second dielectric material layer and that has a thickness of 1 nm.
特許請求の範囲(英語) [claim1]
1. A thermoelectric conversion material, comprising: a first dielectric material layer comprising a SrTiO3 single crystal substrate; and
a second dielectric material layer comprising a TiO2 or SrTiO3 thin film that is epitaxially grown on said first dielectric material layer, characterized in that
an electron localization layer that is formed between said first dielectric material layer and second dielectric material layer, the electron localization layer having a thickness equal to or greater than 0.04 nm and equal to or less than 1 nm and a carrier electron density equal to or greater than 1 * 1020 cm-3,
wherein a Seebeck coefficient is approximately between 3 and 8 times that in bulk of SrTiO3 or TiO2.
[claim2]
2. The thermoelectric conversion material according to claim 1, characterized in that the electron density in said electron localization layer is ten times or more the carrier electron density in said first and second dielectric material layers.
[claim3]
3. The thermoelectric conversion material according to claim 1, characterized in that the electron density in said electron localization layer is 100 times or more the carrier electron density in said first and second dielectric material layers.
[claim4]
4. The thermoelectric conversion material according to claim 1, wherein the electron localization layer has the thickness of 0.1 nm.
[claim5]
5. The thermoelectric conversion material according to claim 1, wherein the second dielectric material layer is made by a nonequilibrium thin film process.
[claim6]
6. A thermoelectric conversion material, comprising: a first dielectric material layer comprising a SrTiO3 single crystal substrate; and
a second dielectric material layer comprising a TiO2 or SrTiO3 thin film that is epitaxially grown on said first dielectric material layer, characterized in that
an electron localization layer that is formed between said first dielectric material layer and second dielectric material layer, the electron localization layer having a thickness equal to or greater 0.04 nm and equal to or less than 1 nm and a carrier electron density equal to or greater than 1 * 1020 cm-3,
wherein an absolute value of a Seebeck coefficient is approximately between 0.42 mVK-1 and 1.2 mVK-1.
[claim7]
7. The thermoelectric conversion material according to claim 6, characterized in that the electron density in said electron localization layer is ten times or more the carrier electron density in said first and second dielectric material layers.
[claim8]
8. The thermoelectric conversion material according to claim 6, characterized in that the electron density in said electron localization layer is 100 times or more the carrier electron density in said first and second dielectric material layers.
[claim9]
9. The thermoelectric conversion material according to claim 6, wherein the electron localization layer has the thickness of 0.1 nm.
[claim10]
10. The thermoelectric conversion material according to claim 6, wherein the second dielectric material layer is made by a nonequilibrium thin film process.
[claim11]
11. A thermoelectric conversion material, comprising: a first dielectric material layer comprising a SrTiO3 single crystal; and
a second dielectric material layer comprising a TiO2 or SrTiO3 thin film that is epitaxially grown on said first dielectric material layer, characterized in that
an electron localization layer that is formed between said first dielectric material layer and second dielectric material layer, the electron localization layer having a thickness equal to or greater 0.04 nm and equal to or less than 1 nm,
wherein a Seebeck coefficient is approximately between 3 and 8 times that in bulk of SrTiO3 or TiO2.
[claim12]
12. The thermoelectric conversion material according to claim 11, characterized in that a carrier electron density in said electron localization layer is equal to or greater than 1 * 1020 cm-3.
  • 発明者/出願人(英語)
  • HOSONO HIDEO
  • HIRANO MASAHIRO
  • OHTA HIROMICHI
  • KOUMOTO KUNIHITO
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • NAGOYA UNIVERSITY
国際特許分類(IPC)
米国特許分類/主・副
  • 136/239
  • 136/201
  • 257/E49.001
  • 438/54
参考情報 (研究プロジェクト等) ERATO/SORST Exploring and developing applications for active functions utilizing nanostructure embedded in transparent oxides AREA
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