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Fine projection structure and fabricating method thereof

外国特許コード F110003594
整理番号 E03510US
掲載日 2011年6月30日
出願国 アメリカ合衆国
出願番号 09403198
公報番号 06025604
出願日 平成10年6月9日(1998.6.9)
公報発行日 平成12年2月15日(2000.2.15)
優先権データ
  • 特願平09-153651 (1997.6.11) JP
発明の名称 (英語) Fine projection structure and fabricating method thereof
発明の概要(英語) Dispose a fine metal particle on a semiconductor substrate. By heat-treating this in a vacuum, a constituent element of the semiconductor substrate is dissolved into the fine metal particle to form a solid solution, resulting in further formation of a homogeneous liquid phase (liquid droplet) composed of semiconductor-metal. By annealing this, the constituent element of the semiconductor substrate is precipitated from the semiconductor-metal liquid droplet. Thus, a fine projection composite structure comprising a semiconductor substrate, a semiconductor fine projection epitaxially grown selectively at an arbitrary position on the semiconductor substrate, and a metal layer disposed selectively on the semiconductor fine projection, can be obtained. The metal layer can be removed as demands arise. Such a fine projection composite structure possesses applicability in, for instance, an ultra-high integration semiconductor device or a quantum size device.
  • 発明者/出願人(英語)
  • Wakayama, Yutaka; Yokohama [JP]
  • Tanaka, Shun-ichiro; Yokohama [JP]
  • Japan Science and Technology Corporation, [JP]
  • Kabushiki Kaisha Toshiba, [JP]
国際特許分類(IPC)
米国特許分類/主・副
  • 257/14
  • 257/22
参考情報 (研究プロジェクト等) ERATO TANAKA Solid Junction AREA
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