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Magnetic apparatus with magnetic thin film

外国特許コード F110003630
整理番号 A241-08EP2
掲載日 2011年6月30日
出願国 欧州特許庁(EPO)
出願番号 10008651
公報番号 2264725
公報番号 2264725
出願日 平成15年12月11日(2003.12.11)
公報発行日 平成22年12月22日(2010.12.22)
公報発行日 平成28年11月23日(2016.11.23)
優先権データ
  • 特願2002-363127 (2002.12.13) JP
  • 特願2002-378502 (2002.12.26) JP
  • 03778828 (2003.12.11) EP
  • 特願2003-271628 (2003.7.7) JP
  • 特願2003-410966 (2003.12.9) JP
発明の名称 (英語) Magnetic apparatus with magnetic thin film
発明の概要(英語) (EP2264725)
A magnetic thin film structure comprising a substrate and a Co 2 Fe x Cr 1-x Al thin film formed on said substrate, and said Co 2 Fe x Cr 1-x Al thin film has either of structures L2 1 , B2 and A2, and in which x is 0‰¤x‰¤1.
特許請求の範囲(英語) [claim1]
1. A magnetic thin film structure (41, 45), characterized in that: it comprises a substrate (42), and a Co 2Fe xCr 1-xAl thin film (43) formed on said substrate (42), and said Co 2Fe xCr 1-xAl thin film (43) has either of structures L2 1, B2, and A2, and in which x is 0 <= x <= 1.
[claim2]
2. The magnetic thin film structure (41, 45) as set forth in claim 1, characterized in that said Co 2Fe xCr 1-xAl thin film (43) is formed without heating said substrate (42).
[claim3]
3. The magnetic thin film structure (41, 45) as set forth in claim 1 or claim 2, characterized in that said substrate (42) is either thermally oxidized Si, glass, MgO single crystal, GaAs single crystal, or Al 2O 3 single crystal.
[claim4]
4. The magnetic thin film structure (41, 45) as set forth in any one of claims 1 - 3, characterized in that a buffer layer (44) is provided between said substrate (42) and said Co 2Fe xCr 1-xAl thin film (43).
[claim5]
5. The magnetic thin film structure (41, 45) as set forth in any one of claims 1 - 4, characterized in that said buffer layer (44) is made of at least either one of Al, Cu, Cr, Fe, Nb, Ni, Ta, and NiFe.
[claim6]
6. The magnetic thin film structure (41, 45) as set forth in any one of claims 1 - 5, characterized in that: the Co 2Fe xCr 1-xAl magnetic thin film (43) is one of a plurality of ferromagnetic layers in a tunnel magnetoresistance effect device or a giant magnetoresistance effect device (50, 55, 60, 70, 75).
[claim7]
7. The magnetic thin film structure (41, 45) as set forth in claim 6, characterized in that: the structures L2 1, B2, and A2 are adapted such that an electric current is applicable which flows in the direction perpendicular to the surface of the magnetic thin structure (41, 45).
[claim8]
8. The magnetic thin film structure (41, 45) as set forth in any one of claims 1 to 7, characterized in that: the magnetic thin film structure (41, 45) is used in a magnetic head.
  • 出願人(英語)
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • INOMATA KOUICHIRO
  • TEZUKA NOBUKI
国際特許分類(IPC)
欧州特許分類/主・副
  • B82Y010/00
  • B82Y025/00
  • G11B005/39C1
  • G11B005/39C1C
  • G11B005/39C
  • G11B005/65B
  • G11B005/66
  • G11B005/73N3
  • G11C011/16
  • H01F010/193H
  • H01F010/32N4
  • H01F010/32N6A
  • H01L043/08
  • S11B005/39W
  • T01F010/32N
指定国 (EP2264725)
Contracting States: DE FR NL
参考情報 (研究プロジェクト等) CREST Creation of Nanodevices and System Based on New Physical Phenomena and Functional Principles AREA
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