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Growth of reduced dislocation density non-polar gallium nitride 実績あり

外国特許コード F110003755
整理番号 E06702US2
掲載日 2011年7月4日
出願国 アメリカ合衆国
出願番号 67033207
公報番号 20070126023
公報番号 7847293
出願日 平成19年2月1日(2007.2.1)
公報発行日 平成19年6月7日(2007.6.7)
公報発行日 平成22年12月7日(2010.12.7)
国際出願番号 US2003021918
国際公開番号 WO2004061909
国際出願日 平成15年7月15日(2003.7.15)
国際公開日 平成16年7月22日(2004.7.22)
優先権データ
  • 10/537,644 (2005.6.6) US
  • 2003US021918 (2003.7.15) WO
  • 60/433,843P (2002.12.16) US
  • 60/433,844P (2002.12.16) US
発明の名称 (英語) Growth of reduced dislocation density non-polar gallium nitride 実績あり
発明の概要(英語) Lateral epitaxial overgrowth (LEO) of non-polar gallium nitride (GaN) films results in significantly reduced defect density.
特許請求の範囲(英語) [claim1]

[claim2]
1. A method of performing a lateral epitaxial overgrowth of a planar and non-polar gallium nitride (GaN) film, comprising: (a) patterning a mask deposited on a substrate; and
(b) performing a lateral epitaxial overgrowth of the planar and non-polar GaN film off the substrate, wherein the planar and non-polar GaN film nucleates only on portions of the substrate not covered by the patterned mask, the planar and non-polar GaN film grows vertically through openings in the patterned mask, and the planar and non-polar GaN film then spreads laterally above the patterned mask and across the substrate's surface resulting in a top surface that is planar and non-polar GaN.
[claim3]
2. The method of claim 1, wherein the planar and non-polar GaN film is a coalesced planar and non-polar GaN film.
[claim4]
3. The method of claim 1, wherein the planar and non-polar GaN film is an uncoalesced planar and non-polar GaN film.
[claim5]
4. A device manufactured using the method of claim 1.
[claim6]
5. A lateral epitaxial overgrowth of a planar and non-polar gallium nitride (GaN) film off a substrate, wherein the lateral epitaxial overgrowth is created using a process comprising: (a) patterning a dielectric mask deposited on a substrate; and
(b) performing a lateral epitaxial overgrowth of the planar and non-polar GaN film off the substrate, wherein the planar and non-polar GaN film nucleates only on portions of the substrate exposed by the patterned dielectric mask, the planar and non-polar GaN film grows vertically through openings in the patterned dielectric mask, and the planar and non-polar GaN film then spreads laterally above the patterned dielectric mask and across the substrate's surface resulting in a top surface that is planar and non-polar GaN.
[claim7]
6. The process of claim 5, wherein the planar and non-polar GaN film is a coalesced planar and non-polar GaN film.
[claim8]
7. The process of claim 5, wherein the planar and non-polar GaN film is an uncoalesced planar and non-polar GaN film.
[claim9]
8. A device including a lateral epitaxial overgrowth of a planar and non-polar gallium nitride (GaN) film having a top surface that is planar and non-polar GaN.
[claim10]
9. The device of claim 8, wherein the device is light-emitting diode, a laser diode or a transistor.
  • 発明者/出願人(英語)
  • HASKELL BENJAMIN A
  • CRAVEN MICHAEL D
  • FINI PAUL T
  • DENBAARS STEVEN P
  • SPECK JAMES S
  • NAKAMURA SHUJI
  • UNIVERSITY OF CALIFORNIA
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
米国特許分類/主・副
  • 257/64
  • 257/E21.05
  • 257/E33.005
  • 438/481
参考情報 (研究プロジェクト等) ERATO NAKAMURA Inhomogeneous Crystal AREA
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