TOP > 外国特許検索 > Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices

Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices 実績あり

外国特許コード F110003775
整理番号 E06722US2
掲載日 2011年7月4日
出願国 アメリカ合衆国
出願番号 95302910
公報番号 20110062449
公報番号 8686466
出願日 平成22年11月23日(2010.11.23)
公報発行日 平成23年3月17日(2011.3.17)
公報発行日 平成26年4月1日(2014.4.1)
優先権データ
  • 11/444,946 (2006.6.1) US
  • 60/686,244P (2005.6.1) US
発明の名称 (英語) Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices 実績あり
発明の概要(英語) A method for growth and fabrication of semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga, Al, In, B)N template or nucleation layer on the substrate, and growing the semipolar (Ga, Al, In, B)N thin films, heterostructures or devices on the planar semipolar (Ga, Al, In, B)N template or nucleation layer.
The method results in a large area of the semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices being parallel to the substrate surface.
特許請求の範囲(英語) [claim1]
1. A light emitting device , comprising: a semipolar III-nitride film including a light emitting device structure, wherein: the light emitting device structure includes one or more semipolar III-nitride active layers grown on or above a surface of a substrate, and
one or more material properties of the semipolar III-nitride active layers are such that the device has an output power of at least 1.5 milliwatts at 250 milliamps drive current and at a current density of no more than 278 Amps per centimeter square.
[claim2]
2. The device of claim 1, wherein the semipolar III-nitrade active layers are grown on or above a semipolar surface of the substrate comprising a free-standing gallium nitride (GaN) substrate.
[claim3]
3. The device of claim 1, wherein the substrate is grown on a foreign material.
[claim4]
4. The device of claim 1, wherein the semipolar III-nitride active layers form a heterostructure and the device is a light emitting diode.
[claim5]
5. The device of claim 1, wherein the semipolar III-nitride emit light with reduced blue-shift in -a blue emission peak with increasing drive current density between at least 33 Amps per centimeter square and at least 222 Amps per centimeter square, as compared to polar III-nitride active layers operating in similar wavelength and drive current density ranges.
[claim6]
6. The device of claim 1, wherein the semipolar III-nitride active layers emit light with a reduced decrease in the external quantum efficiency (EQE) with increasing drive current density, as compared to polar III-nitride active layers operating in similar wavelength and drive current density ranges.
[claim7]
7. The device of claim 1, wherein the semipolar III-nitride active layers have reduced polarization effects and effective hole masses, as compared to polar III-nitride active layers operating in similar wavelength and drive current density ranges.
[claim8]
8. The device of claim 1, wherein the device structure comprises a blue light emitting semipolar Light Emitting Diode (LED).
[claim9]
9. The device of claim 1, wherein a top surface of the semipolar III-nitride active layers is planar, semipolar, and substantially parallel to a main surface of the substrate.
[claim10]
10. The device of claim 1, wherein: the light emitting device structure has a peak External Quantum Efficiency (EQE) at a current density of no more than 55 Amps per centimeter square; and a drop in the EQE is no more than 15% at a current density of at least 111 Amps per centimeter square, as compared to the peak EQE.
[claim11]
11. The device of claim 1, wherein the semipolar III-nitride active layers are grown on or above a semipolar surface of a gallium nitride (GaN) template having a thickness of at least 10 micrometers.
[claim12]
12. The device of claim 1, wherein the light emitting device structure has an emission peak at a blue wavelength at a current density in a range between at least 33 Amps per centimeter square and at least 222 Amps per centimeter square.
[claim13]
13. The device of claim 1, wherein the substrate is a nitride substrate.
[claim14]
14. A method for fabricating a device, comprising: growing a semipolar III-nitride film including a light emitting device structure, wherein: the light emitting device structure includes one or more semipolar III-nitride active layers grown on or above a surface of a nitride substrate, and
the semipolar III-nitride active layers have one or more material properties such that the device has an output power of at least 1.5 milliwatts at 250 milliamps drive current and at a current density of no more than 278 Amps per centimeter square.
[claim15]
15. The method of claim 14, wherein the semipolar III-nitride active layers are grown on or above the nitride substrate comprising a free-standing gallium nitride (GaN) substrate.
[claim16]
16. The method of claim 14, wherein the nitride substrate is grown on a foreign material.
[claim17]
17. The method of claim 14, wherein the semipolar III-nitride active layers form a heterostructure and the device is a light emitting diode.
[claim18]
18. The method of claim 14, wherein the semipolar III-nitride active layers emit light with a reduced blue-shift in a blue emission peak with increasing drive current density between at least 33 Amps per centimeter square and at least 222 Amps per centimeter square as compared to polar III-nitride active layers operating in similar wavelength and drive current density ranges.
[claim19]
19. The method of claim 14, wherein the semipolar III-nitride active layers emit light with a reduced decrease in the external quantum efficiency (EQE) with increasing drive current density, as compared to polar III-nitride active layers operating in similar wavelength and drive current density ranges.
[claim20]
20. The method of claim 14, wherein the semipolar III-nitride active layers have reduced polarization effects and effective hole masses, as compared to polar III-nitride active layers operating in similar wavelength and drive current density ranges.
[claim21]
21. The method of claim 14, wherein the light emitting device structure comprises a blue light emitting semipolar Light Emitting Diode (LED).
[claim22]
22. A device fabricated using the method of claim 14.
[claim23]
23. The method of claim 14, wherein: a top surface of the semipolar III-nitride active layers is planar, semipolar, and substantially parallel to a semipolar surface of the nitride substrate comprising a nitride template layer, and
the top surface has a surface area of at least 300 micrometers by 300 micrometers.
[claim24]
24. The method of claim 14, wherein the semipolar III-nitride active layers are grown on or above a semipolar surface of a gallium nitride (GaN) template having a thickness of at least 10 micrometers.
[claim25]
25. The method of claim 14, wherein a semipolar orientation and the one or more material properties of the semipolar III-nitride active layers are such that the light emitting device structure has a peak External Quantum Efficiency (EQE) at a current density of no more than 222 Amps per centimeter square and a drop in the EQE of no more than 51% at a current density of at least 278 Amps per centimeter square, as compared to the peak EQE.
[claim26]
26. A light emitting device, comprising: a semipolar III-nitride film including a light emitting device structure, wherein: the light emitting device structure includes one or more seimpolar III-nitride active lavers grown on or above a surface of a substrate,
one or more material properties of the semipolar III-nitride active layers are such that the device has an output power of at least 1.5 milliwatts at 250 milliamps drive current, and
a semipolar orientation and the one or more material properties of the semipolar III-nitride active layers are such that the light emitting device structure has a peak External Quantum Efficiency (EQE) at a current density of no more than 222 Amps per centimeter square and a drop in the EQE of no more than 51% at a current density of at least 278 Amps per centimeter square, as compared to the peak EQE.
  • 発明者/出願人(英語)
  • FARRELL JR ROBERT M
  • BAKER TROY J
  • CHAKRABORTY ARPAN
  • HASKELL BENJAMIN A
  • PATTISON P MORGAN
  • SHARMA RAJAT
  • MISHRA UMESH K
  • DENBAARS STEVEN P
  • SPECK JAMES S
  • NAKAMURA SHUJI
  • UNIVERSITY OF CALIFORNIA
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
米国特許分類/主・副
  • 257/103
参考情報 (研究プロジェクト等) ERATO NAKAMURA Inhomogeneous Crystal AREA
ライセンスをご希望の方、特許の内容に興味を持たれた方は、問合せボタンを押してください。

PAGE TOP

close
close
close
close
close
close