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Non-polar and semi-polar light emitting devices 実績あり

外国特許コード F110003786
整理番号 E06737US1
掲載日 2011年7月4日
出願国 アメリカ合衆国
出願番号 00122707
公報番号 20080179607
公報番号 9130119
出願日 平成19年12月11日(2007.12.11)
公報発行日 平成20年7月31日(2008.7.31)
公報発行日 平成27年9月8日(2015.9.8)
優先権データ
  • 60/869,540P (2006.12.11) US
発明の名称 (英語) Non-polar and semi-polar light emitting devices 実績あり
発明の概要(英語) An (Al, Ga, In)N light emitting device, such as a light emitting diode (LED), in which high light generation efficiency is realized by fabricating the device on non-polar or semi-polar III-Nitride crystal geometries.
Because non-polar and semi-polar emitting devices have significantly lower piezoelectric effects than c-plane emitting devices, higher efficiency emitting devices at higher current densities can be realized.
特許請求の範囲(英語) [claim1]
1. A III-nitride light emitting device, comprising: a plurality of III-nitride layers comprising at least one p-type layer, an active region, and at least one n-type layer,
wherein the III-nitride layers are not c-plane III-nitride layers, and
wherein the active region is comprised of at least one III-nitride quantum well layer having a thickness that achieves a current density such that light is emitted at an output power of at least 25 milliWatts (mW) when a current input at 20 milliAmps (mA) is applied.
[claim2]
2. The device of claim 1, wherein the at least one quantum well layer has a thickness of approximately 8-12 nanometers.
[claim3]
3. The device of claim 1, wherein the at least one quantum well layer has a thickness of approximately 10 nanometers.
[claim4]
4. The device of claim 1, wherein one or more emitting surfaces of the device is roughened, textured, patterned or shaped.
[claim5]
5. The device of claim 4, wherein more than one emitting surface of the device is roughened, textured, patterned or shaped.
[claim6]
6. The device of claim 4, wherein the emitting surface of the device is a cone shaped surface.
[claim7]
7. The device of claim 1, wherein the active region is comprised of multiple emitting layers emitting light at more than one wavelength.
[claim8]
8. The device of claim 1, further comprising a transparent electrode layer is formed adjacent the III-nitride layers.
[claim9]
9. The device of claim 8, wherein the transparent electrode layer is an electrically conductive contact layer.
[claim10]
10. The device of claim 8, wherein a surface of the transparent layer is roughened, textured, patterned or shaped.
[claim11]
11. The device of claim 8, wherein a current spreading layer is deposited before the transparent electrode layer.
[claim12]
12. The device of claim 1, wherein the device is placed on a transparent mounting structure.
[claim13]
13. The device of claim 1, wherein the active region includes at least one quantum well layer having a thickness greater than 5 nanometers to increase emitting efficiency as compared to non-polar or semi-polar III-nitride quantum well layers having a thickness of 5 nanometers or less and the light-emitting device has increased light emitting efficiency as the thickness is increased.
[claim14]
14. A method of fabricating a III-nitride light emitting device, comprising: forming a plurality of III-nitride layers comprising at least one p-type layer, an active region, and at least one n-type layer,
wherein the III-nitride layers are not c-plane III-nitride layers, and
wherein the active region is comprised of at least one III-nitride quantum well layer having a thickness that achieves a current density such that light is emitted at an output power of at least 25 milliWatts (mW) when a current input at 20 milliAmps (mA) is applied.
[claim15]
15. The method of claim 14, wherein the at least one quantum well layer has a thickness of approximately 8-12 nanometers.
[claim16]
16. The method of claim 14, wherein the at least one quantum well layer has a thickness of approximately 10 nanometers.
[claim17]
17. The method of claim 14, wherein one or more emitting surfaces of the device is roughened, textured, patterned or shaped.
[claim18]
18. The method of claim 17, wherein more than one emitting surface of the device is roughened, textured, patterned or shaped.
[claim19]
19. The method of claim 17, wherein the emitting surface of the device is a cone shaped surface.
[claim20]
20. The method of claim 14, wherein the active region is comprised of multiple emitting layers emitting light at more than one wavelength.
[claim21]
21. The method of claim 14, further comprising forming a transparent electrode layer adjacent the III-nitride layers.
[claim22]
22. The method of claim 21, wherein the transparent electrode layer is an electrically conductive contact layer.
[claim23]
23. The method of claim 21, wherein a surface of the transparent layer is roughened, textured, patterned or shaped.
[claim24]
24. The method of claim 21, wherein a current spreading layer is deposited before the transparent electrode layer.
[claim25]
25. The method of claim 14, wherein the device is placed on a transparent mounting structure.
[claim26]
26. The method of claim 14, wherein the active region includes at least one III-nitride quantum well layer having a thickness greater than 5 nanometers to increase emitting efficiency as compared to non-polar or semi-polar III-nitride quantum well layers having a thickness of 5 nanometers or less and the light-emitting device has increased light emitting efficiency as the thickness is increased.
  • 発明者/出願人(英語)
  • DENBAARS STEVEN P
  • SCHMIDT MATHEW C
  • KIM KWANG CHOONG
  • SPECK JAMES S
  • NAKAMURA SHUJI
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
米国特許分類/主・副
  • 257/94
  • 257/E33.001
  • 257/E33.008
  • 257/E33.074
  • 438/46
参考情報 (研究プロジェクト等) ERATO NAKAMURA Inhomogeneous Crystal AREA
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