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Ultraviolet light emitting diode and ultraviolet laser diode

外国特許コード F110003892
整理番号 E06002EP
掲載日 2011年7月6日
出願国 欧州特許庁(EPO)
出願番号 01946982
公報番号 1258928
公報番号 1258928
出願日 平成13年1月24日(2001.1.24)
公報発行日 平成14年11月20日(2002.11.20)
公報発行日 平成28年3月30日(2016.3.30)
国際出願番号 JP2001000465
国際公開番号 WO2001056088
国際出願日 平成13年1月24日(2001.1.24)
国際公開日 平成13年8月2日(2001.8.2)
優先権データ
  • 2001JP000465 (2001.1.24) WO
  • 特願2000-024843 (2000.1.28) JP
発明の名称 (英語) Ultraviolet light emitting diode and ultraviolet laser diode
発明の概要(英語) An ultraviolet-light-emitting semiconductor diode comprising an n-type ZnO layer with luminous characteristics formed on a transparent substrate, and a p-type semiconductor layer selected from the group consisting of SrCu2O2, CuAlO2 and CuGaO2, which is formed on the n-type ZnO layer to provide a p-n junction therebetween.
The transparent substrate is preferably a single crystal substrate having atomically flat yttria-stabilized zirconia (YSZ) (III) surface.
The n-type ZnO layer is formed on the transparent substrate having a temperature of 200 to 1200 DEG C, and the p-type semiconductor layer selected from the group of SrCu2O2, CuAlO2 and CuGaO2 is formed on the n-type ZnO layer.
The n-type ZnO layer may be formed without heating the substrate, and then the surface of the ZnO layer may be irradiated with ultraviolet light to promote crystallization therein.
特許請求の範囲(英語) [claim1]
1. An ultraviolet-light-emitting diode comprising: an n-type ZnO layer formed on a transparent substrate and exhibiting only intrinsic luminescence in the vicinity of a band gap thereof, the half bandwidth of said ZnO layer in the rocking curve of (0002) surface of ZnO crystal phase being one degree or less, in X-ray diffraction method, and a p-type semiconductor layer selected from the group consisting of SrCu 2O 2, CuAlO 2 and CuGaO 2, said p-type layer being formed directly on said n-type ZnO layer to provide a p-n junction therebetween, wherein said transparent substrate is an yttria-stabilized zirconia (YSZ) single crystal substrate having an atomically flat (111) surface, wherein said light-emitting diode further includes a transparent negative electrode layer formed on said transparent substrate, and wherein the ZnO layer, which has a carrier concentration within the range of 1x10 **17 to 1x10 **20/cm **3, is heteroepitaxially grown on said transparent negative electrode layer to serve as a luminescent layer, the p-type semiconductor layer being formed on said ZnO layer to serve as a hole-injection layer, said p-type semiconductor layer including a positive electrode layer formed thereon.
[claim2]
2. The ultraviolet-light-emitting diode as defined in claim 1, wherein said transparent negative electrode layer comprises indium-tin oxide (ITO) hetero epitaxially grown on said transparent substrate.
[claim3]
3. The ultraviolet-light-emitting diode as defined in claim 1, wherein Ni is formed as the positive electrode on said p-type semiconductor layer.
[claim4]
4. The ultraviolet-light-emitting diode as defined in claim 1, wherein said p-type semiconductor layer is a SrCu 2O 2 layer wherein the p-type semiconductor layer contains 20 atom% or less of a univalent metal substituted for a Sr site of the SrCu 2O 2 layer.
[claim5]
5. A method for producing a ultraviolet-light-emitting diode defined in claim 1 which includes an n-type ZnO layer formed on a transparent substrate and exhibiting only intrinsic luminescence in the vicinity of a band gap thereof, and a p-type semiconductor layer consisting of SrCu 2O 2, said p-type layer being formed directly on said n-type ZnO layer to provide a p-n junction therebetween, said method comprising the steps of forming the n-type ZnO layer on the transparent yttria-stabilized zirconia (YSZ) single crystal substrate having an atomically flat (111) surface while keeping the substrate at a temperature in the range of 200 to 1200 deg.C, and forming on the ZnO layer the p-type semiconductor layer consisting of SrCu 2O 2 while keeping the substrate at a temperature in the range of 200 to 800 deg.C.
[claim6]
6. A method for producing a ultraviolet-light-emitting diode defined in claim 1 which includes an n-type ZnO layer formed on a transparent substrate and exhibiting only intrinsic luminescence in the vicinity of a band gap thereof, and a p-type semiconductor layer selected from the group consisting of CuAlO 2 and CuGaO 2, said p-type layer being formed directly on said n-type ZnO layer to provide a p-n junction therebetween, said method comprising the steps of forming the n-type ZnO layer on the flat (111) surface while keeping the substrate at a temperature in the range of 200 to 1200 deg.C, and forming on the ZnO layer the p-type semiconductor layer selected from the group consisting of CuAlO 2 and CuGaO 2 while keeping the substrate at a temperature in the range of 500 to 800 deg.C.
[claim7]
7. A method for producing a ultraviolet light-emitting diode defined in claim 1 which including an n-type ZnO layer formed on a transparent substrate and exhibiting only intrinsic luminescence in the vicinity of a band gap thereof, and a p-type semiconductor layer selected from the group consisting of SrC u2O 2, CuAlO 2 and CuGaO 2, said p-type layer being formed directly on said n-type ZnO layer to provide a p-n junction therebetween, said method comprising the steps of forming the n-type ZnO layer on the transparent yttria-stabilized zirconia (YSZ) single crystal substrate having an atomically flat (111) surface without heating the substrate, irradiating the surface of the ZnO layer with ultraviolet light to promote crystallization therein, and forming on the ZnO layer the p-type semiconductor layer selected from the group consisting of SrCu 2O 2, CuAlO 2 and CuGaO 2 without heating the substrate, and irradiating the surface of the p-type semiconductor layer with ultraviolet light to promote crystallization therein.
[claim8]
8. The method as defined in either one of claim 5 to 7, which further includes the steps of polishing the yttria-stabilized zirconia (YSZ) single crystal, and heating the optically polished YSZ single crystal at a temperature in the range of 1000 to 1300 deg.C to prepare the transparent substrate having an atomically flat surface.
[claim9]
9. An ultraviolet-light-emitting laser diode comprising: an n-type ZnO layer formed on a transparent yttria-stabilized zirconia (YSZ) single crystal substrate having an atomically flat (111) surface and exhibiting only intrinsic luminescence in the vicinity of a band gap thereof; and a p-type semiconductor layer selected from the group consisting of SrCu 2O2, CuAlO 2 and CuGaO 2, said p-type layer being formed directly on said n-type ZnO layer to provide a p-n junction therebetween, wherein a Mg-substituted ZnO is heteroepitaxially grown on said single crystal substrate, wherein said n-type ZnO layer is heteroepitaxially grown on said Mg-substituted ZnO. and wherein said p-type semiconductor layer includes: a first p-type semiconductor layer having a carrier concentration within the range of 1x10 **16 to 1x10 **19 /cm **3 and serving as a hole-injection layer, and a second p-type semiconductor layer having a carrier concentration within the range of 1x10 **17 to 1x10 **20/cm **3, which is higher than that of the first p-type semiconductor layer, said second p-type semiconductor layer being formed directly on said first p-type semiconductor layer.
  • 出願人(英語)
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • HOYA
  • 発明者(英語)
  • OTA HIROMICHI
  • ORITA MASAHIRO
  • HOSONO HIDEO
  • KAWAMURA KENICHI
  • SARUKURA NOBUHIKO
  • HIRANO MASAHIRO
国際特許分類(IPC)
欧州特許分類/主・副
  • H01L033/26
  • H01S005/327
  • T01S005/042E
  • T01S302/00
指定国 Contracting States: DE FR GB IT
参考情報 (研究プロジェクト等) ERATO HOSONO Transparent ElectroActive Materials AREA
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