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Process for producing an ultraviolet-transparent conductive film

外国特許コード F110003894
整理番号 E06004EP
掲載日 2011年7月6日
出願国 欧州特許庁(EPO)
出願番号 01947918
公報番号 1306858
公報番号 1306858
出願日 平成13年7月9日(2001.7.9)
公報発行日 平成15年5月2日(2003.5.2)
公報発行日 平成27年9月16日(2015.9.16)
国際出願番号 JP2001005928
国際公開番号 WO2002005296
国際出願日 平成13年7月9日(2001.7.9)
国際公開日 平成14年1月17日(2002.1.17)
優先権データ
  • 2001JP005928 (2001.7.9) WO
  • 特願2000-209139 (2000.7.10) JP
  • 特願2001-182643 (2001.6.15) JP
発明の名称 (英語) Process for producing an ultraviolet-transparent conductive film
発明の概要(英語) The present invention provides an ultraviolet-transparent conductive film comprising a Ga2O3 crystal.
The film has a transparency in the wavelength range of 240 to 800 nm, or 240 to 400 nm, and an electric conductivity induced by an oxygen deficiency or dopant in the Ga2O3 crystal.
The dopant includes at least one element selected from the group consisting of the Sn, Ge, Si, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W.
The ultraviolet-transparent conductive film is formed through either one of a pulsed-laser deposition method, spattering method, CVD method and MBE method, under the conditions with a substrate temperature of 600 to 1500 DEG C and an oxygen partial pressure of 0 to 1 Pa. <IMAGE>
特許請求の範囲(英語) [claim1]
1. A method of preparing a Ga 2O 3 film, characterized in that the film is an ultraviolet-transparent conductive film comprising a Ga 2O 3 crystal, having a transparency throughout the wavelength range of 240 to 800 nm or throughout the wavelength range of 240 to 400 nm, and an electric conductivity induced by a dopant in said Ga 2O 3 crystal, said method comprising a step of forming said film through any one of a pulsed-laser vapor deposition method, sputtering method, CVD method and MBE method, with a substrate temperature of 600 to 1500 deg.C and an oxygen partial pressure of 0 to 1 Pa.
[claim2]
2. The method of preparing an ultraviolet-transparent conductive film as defined in claim 1, wherein said dopant includes at least one element selected from the group consisting of the Sn, Ge, Si, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W.
  • 出願人(英語)
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • HOYA
  • 発明者(英語)
  • OTA HIROMICHI
  • ORITA MASAHIRO
  • HOSONO HIDEO
  • HIRANO MASAHIRO
国際特許分類(IPC)
指定国 Contracting States: DE FR GB
参考情報 (研究プロジェクト等) ERATO HOSONO Transparent ElectroActive Materials AREA
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