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Amorphous oxide and thin film transistor 実績あり

外国特許コード F110003902
整理番号 E06015EP1
掲載日 2011年7月6日
出願国 欧州特許庁(EPO)
出願番号 10006629
公報番号 2226847
公報番号 2226847
出願日 平成17年2月28日(2005.2.28)
公報発行日 平成22年9月8日(2010.9.8)
公報発行日 平成29年2月8日(2017.2.8)
優先権データ
  • 特願2004-071477 (2004.3.12) JP
  • 特願2004-325938 (2004.11.10) JP
  • 2005EP-0719601 (2005.2.28) EP
発明の名称 (英語) Amorphous oxide and thin film transistor 実績あり
発明の概要(英語) (EP2226847)
The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide.
In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 10 18 /cm 3 , and a thin film transistor using such an amorphous oxide.
In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 10 18 /cm 3 is used in the channel layer 2.
特許請求の範囲(英語) [claim1]
1. A thin film transistor having a gate terminal, a source terminal, and a drain terminal, in which a semiconductor thin film deposited on a substrate is used as a channel layer, characterized in that the channel layer is formed by an amorphous thin film of a transparent oxide composed of In, Ga, Zn, and 0, and the oxide being deposited by a sputtering method or pulsed laser method using a sintered target of InGaO 3(ZnO) m, wherein m is a natural number less than 6, in an atmosphere containing oxygen gas without adding an impurity ion for increasing electrical resistance, and
wherein the oxide has an electron mobility of more than 1 cm **2/(V.sec) at room temperature selected from the range of 0 deg.C and 40 deg.C and an electron carrier concentration of 10 **16/cm **3 or less as determined by Hall effect measurements.
[claim2]
2. The transistor according to claim 1, further comprising a gate insulating film.
[claim3]
3. The transistor according to claim 2, wherein the gate insulating film contains one or more selected from Al 2O 3, Y 2O 3, or HfO 2.
[claim4]
4. The transistor according to claim 2, wherein the substrate is one of a glass plate, a plastic plate or a plastic film.
  • 出願人(英語)
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • HOSONO HIDEO
  • HIRANO MASAHIRO
  • OTA HIROMICHI
  • KAMIYA TOSHIO
  • NOMURA KENJI
国際特許分類(IPC)
欧州特許分類/主・副
  • C23C014/00F
  • C23C014/08L
  • C23C014/28
  • C23C014/34B2
  • H01L021/02K4C1C1
  • H01L021/02K4C1D
  • H01L021/02K4E3P
  • H01L027/12T4K
  • H01L029/786K2
  • H01L029/786K
  • H01L029/786S
指定国 (EP2226847)
Contracting States: DE FR GB
参考情報 (研究プロジェクト等) ERATO HOSONO Transparent ElectroActive Materials AREA
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