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Method for fabricating a thin film transistor having an amorphous oxide as a channel layer 実績あり

外国特許コード F110003903
整理番号 E06015EP2
掲載日 2011年7月6日
出願国 欧州特許庁(EPO)
出願番号 10007790
公報番号 2246894
公報番号 2246894
出願日 平成17年2月28日(2005.2.28)
公報発行日 平成22年11月3日(2010.11.3)
公報発行日 平成26年4月2日(2014.4.2)
優先権データ
  • 05719601 (2005.2.28) EP
  • 特願2004-071477 (2004.3.12) JP
  • 特願2004-325938 (2004.11.10) JP
発明の名称 (英語) Method for fabricating a thin film transistor having an amorphous oxide as a channel layer 実績あり
発明の概要(英語) The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide.
In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 10 **18 /cm **3, and a thin film transistor using such an amorphous oxide.
In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 10 **18 /cm **3 is used in the channel layer 2. (see diagramm)
特許請求の範囲(英語) [claim1]
1. A method of forming a thin film transistor having a gate terminal, a source terminal, and a drain terminal, in which a semiconductor thin film deposited on a substrate is used as a channel layer, characterized by
depositing the channel layer on the substrate by a vapor-phase growth deposition method using a target of polycrystal of a compound represented by InGaO 3 (ZnO) m, wherein m is a natural number less than 6,
wherein the vapor-phase growth deposition is performed to deposit a transparent, semi-insulating and amorphous oxide composed of In, Ga, Zn, and 0, in an atmosphere containing oxygen without adding impurity ions to increase electrical resistance and
at an oxygen partial pressure so as to adjust an electron carrier concentration to 10 **18/cm **3 or less as measured by Hall-effect measurement and an electron mobility is 1 cm **2/(V.sec) or more at room temperature.
[claim2]
2. The method of forming a thin film transistor according to claim 1, wherein the substrate is one of a glass plate, a plastic plate or a plastic film.
[claim3]
3. The method of forming a thin film transistor according to claim 1, wherein the vapor-phase growth deposition method is either a pulse laser deposition method or a sputtering method.
  • 出願人(英語)
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • HOSONO HIDEO
  • HIRANO MASAHIRO
  • OTA HIROMICHI
  • KAMIYA TOSHIO
  • NOMURA KENJI
国際特許分類(IPC)
指定国 Contracting States: DE FR GB
参考情報 (研究プロジェクト等) ERATO HOSONO Transparent ElectroActive Materials AREA
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