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Amorphous oxide and thin film transistor 実績あり

外国特許コード F110003904
整理番号 E06015WO
掲載日 2011年7月6日
出願国 欧州特許庁(EPO)
出願番号 05719601
公報番号 1737044
公報番号 1737044
出願日 平成17年2月28日(2005.2.28)
公報発行日 平成18年12月27日(2006.12.27)
公報発行日 平成26年12月10日(2014.12.10)
国際出願番号 JP2005003273
国際公開番号 WO2005088726
国際出願日 平成17年2月28日(2005.2.28)
国際公開日 平成17年9月22日(2005.9.22)
優先権データ
  • 2005JP003273 (2005.2.28) WO
  • 特願2004-071477 (2004.3.12) JP
  • 特願2004-325938 (2004.11.10) JP
発明の名称 (英語) Amorphous oxide and thin film transistor 実績あり
発明の概要(英語) The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide.
In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 10 **18 /cm **3, and a thin film transistor using such an amorphous oxide.
In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 10 **18 /cm **3 is used in the channel layer 2.(see diagramm)
特許請求の範囲(英語) [claim1]
1. A thin film transistor, comprising: a source electrode (6); a drain electrode (5); a gate electrode (4); a channel layer (2); and a gate insulating film (3) positioned between the gate electrode (4) and the channel layer (2), characterized in that the channel layer (2) is formed from a deposited thin film of a transparent amorphous oxide selected from: SnO 2 which is formed as amorphous phase in the presence of In 2O 3 as a host oxide and is represented by In xSn 1-x oxides (0.8 <= x < 1), Indium oxide represented by In 2O 3, or Indium oxide containing neither Zn nor Sn and partly replaced In by Ga and represented by In-Ga oxides, wherein the In-Ga oxides are deposited from a target having a composition of (In 2O 3) 1-x-(Ga 2O 3) x (0 < x <= 0.1), wherein the oxide has an electron mobility of 1 cm **2/(V.sec) or more at room temperature and an electron carrier concentration of less than 10 **18/cm **3 as measured by Hall-effect measurement, and the oxide is deposited at room temperature by a sputtering method or pulsed laser method in an atmosphere containing oxygen gas and without adding an impurity ion for increasing the electrical resistance.
[claim2]
2. The thin film transistor according to claim 1, wherein the amorphous oxide is formed on a glass substrate, a metal substrate, a plastic substrate, or a plastic film.
[claim3]
3. The thin film transistor according to claim 1, wherein a gate insulating layer (3) comprises one of Al 2O 3, Y 2O 3, and HfO 2 or a mixed crystal compound containing at least two of these compounds.
  • 出願人(英語)
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • HOSONO HIDEO
  • HIRANO MASAHIRO
  • OTA HIROMICHI
  • KAMIYA TOSHIO
  • NOMURA KENJI
国際特許分類(IPC)
欧州特許分類/主・副
  • C23C014/00F
  • C23C014/08L
  • C23C014/28
  • C23C014/34B2
  • H01L021/02K4C1C1
  • H01L021/02K4C1D
  • H01L021/02K4E3P
  • H01L027/12T4K
  • H01L029/786K
  • H01L029/786K2
  • H01L029/786S
指定国 Contracting States: DE FR GB
参考情報 (研究プロジェクト等) ERATO HOSONO Transparent ElectroActive Materials AREA
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