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Carbonaceous thin film, process for producing the same and member utilizing the thin film

外国特許コード F110003993
整理番号 K01408WO
掲載日 2011年7月7日
出願国 欧州特許庁(EPO)
出願番号 05719554
公報番号 1726680
公報番号 1726680
出願日 平成17年2月25日(2005.2.25)
公報発行日 平成18年11月29日(2006.11.29)
公報発行日 平成28年10月5日(2016.10.5)
国際出願番号 JP2005003203
国際公開番号 WO2005083144
国際出願日 平成17年2月25日(2005.2.25)
国際公開日 平成17年9月9日(2005.9.9)
優先権データ
  • 2005JP003203 (2005.2.25) WO
  • 特願2004-053123 (2004.2.27) JP
  • 特願2004-197877 (2004.7.5) JP
  • 特願2005-005371 (2005.1.12) JP
発明の名称 (英語) Carbonaceous thin film, process for producing the same and member utilizing the thin film
発明の概要(英語) The present invention provides a novel carbon-based material in which carbons different in property are combined in such a manner as to be applicable to a device.
The carbon-based thin film provides a carbon-based thin film 10 including first phases 1 that contain amorphous carbon and extend in a film thickness direction, and a second phase 2 that contains a graphite structure and intervenes between the first phases 1.
In the thin film, at least one selected from the group consisting of the following a) to e) is satisfied: a) the second phase contains more graphite structures per unit volume than the first phases; b) a density of the second phase is larger than that of the first phases; c) an electric resistivity of the second phase is lower than that of the first phases; d) an elastic modulus of the second phase is higher than that of the first phases; and e) in the second phase, a basal plane of the graphite structure is oriented along the film thickness direction.
特許請求の範囲(英語) [claim1]
1. A carbon-based thin film (10) comprising: columnar first phases (1) that contain amorphous carbon and extend in a film thickness direction; and a second phase (2) that contains a graphite structure and intervenes between the first phases, wherein a density of the second phase is larger than that of the first phases; the carbon-based thin film (10) consists of carbon or of carbon and at least one element selected from a group consisting of hydrogen, nitrogen, boron and silicon, wherein the content of carbon is 50% of the atoms or more; the second phase (2) forms a network between the first phases (1); and the second phase (2) contains more graphite structures per unit volume than the first phases (1).
[claim2]
2. The carbon-based thin film (10) according to claim 1, wherein the first phases (1) have an average size of 300 nm or less in an in-plane direction of the film.
[claim3]
3. The carbon-based thin film (10) according to claim 1 or 2, wherein an average spacing (W1) between adjacent two phases selected from the first phases is 50 nm or less in an in-plane direction of the film.
[claim4]
4. The carbon-based thin film (20) according to any one of claims 1 to 3, comprising: a first region (11) including the first phases (1) and the second phase (2); and a second region (12) including: columnar third phases (3) that contain amorphous carbon and extend in a film thickness direction; and a fourth phase (4) that contains amorphous carbon and intervenes between the third phases,wherein at least one selected from the group consisting of the following f) to i) is satisfied: f) the second phase contains more graphite structures per unit volume than the fourth phase; g) a density of the second phase is larger than that of the fourth phase; h) an electric resistivity of the second phase is lower than that of the fourth phase; and i) an elastic modulus of the second phase is higher than that of the fourth phase.
[claim5]
5. The carbon-based thin film (20) according to claim 4, wherein at least one selected from the group consisting of the following j) to k) is satisfied: j) either one selected from the first region (11) and the second region (12) is a columnar region surrounded by the other region, and an average size in an in-plane direction of the columnar region is 100 nm or more; and k) in a first in-plane direction, the first region (11) and the second region (12) have average sizes of two or more times larger than those in a second in-plane direction that is perpendicular to the first in-plane direction, and in the second in-plane direction, the first region and the second region are arranged alternately.
[claim6]
6. The carbon-based thin film (20) according to claim 4 or 5, wherein the first region (11) and the second region (12) are strip-shaped regions.
[claim7]
7. The carbon-based thin film (20) according to any one of claims 1 to 3, comprising: a first region (11) including the first phases and the second phase; and a second region (12) including: columnar third phases (3) that contain amorphous carbon and extend in a film thickness direction; and a fourth phase (4) that contains amorphous carbon and intervenes between the third phases, whereina light transmittance in a wavelength range of 600 nm to 1100 nm in the first region is lower than that in the same wavelength range in the second region.
[claim8]
8. The carbon-based thin film (20) according to claim 7, wherein at least one selected from the group consisting of the following j) to k) is satisfied: j) either one selected from the first region (11) and the second region (12) is a columnar region surrounded by the other region, and an average size in an in-plane direction of the columnar region is 100 nm or more; and k) in a first in-plane direction, the first region (11) and the second region (12) have average sizes of two or more times larger than those in a second in-plane direction that is perpendicular to the first in-plane direction, and in the second in-plane direction, the first region and the second region are arranged alternately.
[claim9]
9. The carbon-based thin film (20) according to claim 7 or 8, wherein the first region (11) and the second region (12) are strip-shaped regions.
[claim10]
10. The carbon-based thin film (10) according to any one of claims 1 to 9, wherein T/W>10 is satisfied in which T is a thickness of the film, and W is an average spacing (W1) between adjacent two phases selected from the first phases in an in-plane direction of the film.
[claim11]
11. The carbon-based thin film (10) according to any one of claims 1 to 10, wherein an elastic modulus of the second phase (2) is higher than that of the first phases (1).
[claim12]
12. The carbon-based thin film (10) according to any one of claims 1 to 11, wherein an electric resistivity of the second phase (2) is lower than that of the first phases (1).
[claim13]
13. A process for producing a carbon-based thin film (10) comprising the following steps of forming an amorphous carbon-based thin film consisting of carbon or of carbon and at least one element selected from a group consisting of hydrogen, nitrogen, boron and silicon, and wherein the content of carbon is 50% of the atoms or more; the amorphous carbon-based thin film including columnar first phases (1) containing amorphous carbon and extending in a film thickness direction, and a second phase (2) intervening between the first phases so that the second phase forms a network between the first phases; the amorphous carbon-based thin film being formed so that a density of the second phase (2) is lower than that of the first phases (1); wherein the amorphous carbon-based thin film is formed by a sputtering method; a substrate temperature is 773 K or less and an atmospheric pressure is 1.33 Pa or more and 6,67 Pa or less; a target for the sputtering method consists of pyrolytic graphite, or consists of pyrolytic graphite and at least one selected from a group consisting of silicon and boron; and subsequently, forming a graphite structure at least in the second phase by supplying energy to the amorphous carbon-based thin film so that, with a formation of the graphite structure, the density of the second phase (2) is higher than that of the first phases (1), and more graphite structures per unit volume are formed in the second phase (2) than in the first phases (1); wherein the amorphous carbon-based thin film is supplied with energy by irradiating an electron beam with an intensity of 1X10 **19/cm **2. sec or less and an energy of 100 keV or less.
[claim14]
14. The process for producing a carbon-based thin film (20) according to claim 13 , wherein the energy is supplied only to a portion of the amorphous carbon-based thin film.
[claim15]
15. The process for producing a carbon-based thin film (20) according to claim 14, wherein the electron beam is irradiated onto a surface of the amorphous carbon-based thin film in a state that the surface is partially masked.
[claim16]
16. The process for producing a carbon-based thin film (20) according to any one of claims 13 to 15, wherein an atmosphere for the sputtering method consists of an inactive gas, or consists of an inactive gas and at least one selected from a group consisting of a hydrogen atom-containing gas and a nitrogen atom-containing gas.
[claim17]
17. A member comprising a substrate and a thin film (53) formed on a surface of the substrate (51), wherein the thin film (53) is the carbon-based thin film according to any one of claims 1 to 12.
[claim18]
18. The member according to claim 17, wherein the substrate (51) is made of metal, semiconductor, ceramic, glass, or resin.
[claim19]
19. The member according to claim 17 or 18, further comprising an intermediate film (52) arranged between the substrate (51) and the thin film (53).
[claim20]
20. The member according to claim 17 or 18, wherein the thin film is formed on the surface of the substrate, and the surface is to be in contact with another member.
[claim21]
21. The member according to any one of claims 17 to 20, wherein the member is usable as at least one selected from the group consisting of a sliding member, a molding die, and an electrical contact terminal.
  • 出願人(英語)
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • IWAMURA EIJI
国際特許分類(IPC)
欧州特許分類/主・副
  • C23C014/06B
  • C23C014/58B4
指定国 Contracting States: DE FR GB
参考情報 (研究プロジェクト等) PRESTO Structural Ordering and Physical Properties AREA
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