TOP > 外国特許検索 > Transparent electroconductive thin film and process for producing the transparent electroconductive thin film

Transparent electroconductive thin film and process for producing the transparent electroconductive thin film

外国特許コード F110004023
整理番号 K02903WO
掲載日 2011年7月8日
出願国 欧州特許庁(EPO)
出願番号 08791069
公報番号 2178095
公報番号 2178095
出願日 平成20年7月10日(2008.7.10)
公報発行日 平成22年4月21日(2010.4.21)
公報発行日 平成27年3月4日(2015.3.4)
国際出願番号 JP2008062521
国際公開番号 WO2009008486
国際出願日 平成20年7月10日(2008.7.10)
国際公開日 平成21年1月15日(2009.1.15)
優先権データ
  • 2008JP062521 (2008.7.10) WO
  • 特願2007-181411 (2007.7.10) JP
発明の名称 (英語) Transparent electroconductive thin film and process for producing the transparent electroconductive thin film
発明の概要(英語) Provided are a transparent electroconductive thin film of single-walled carbon nanotubes and its production method capable of further enhancing the electroconductivity and the light transmittance of the film and capable of simplifying the thin film formation process.
The method comprises: dispersing single-walled carbon nanotubes of mixed metallic single-walled carbon nanotubes (m-SWNTs) and semiconductor single-walled carbon nanotubes (s-SWNTs) in an amine solution containing an amine having a boiling point of from 20 to 400 deg.C as a dispersant; centrifuging or filtering the resulting dispersion to concentrate m-SWNTs, thereby giving a dispersion rich in m-SWNTs; and applying the resulting dispersion rich in m-SWNTs onto a substrate to form a thin film thereon.(see diagramm)
特許請求の範囲(英語) [claim1]
1. A method for producing a transparent electroconductive thin film comprising: dispersing single-walled carbon nanotubes of mixed metallic single-walled carbon nanotubes (m-SWNTs) and semiconductor single-walled carbon nanotubes (s-SWNTs) in an amine solution containing an amine having a boiling point of from 20 to 400 deg.C as a dispersant, centrifuging or filtering the resulting dispersion to concentrate m-SWNTs, thereby giving a dispersion rich in m-SWNTs, and applying the resulting dispersion rich in m-SWNTs onto a substrate which substrate is a solid substrate, film or sheet of transparent resin or a glass sheet, to form thereon a thin film with a thickness from 10 to 100 nm.
[claim2]
2. A method for producing a transparent electroconductive thin film as claimed in claim 1, wherein after the resulting dispersion rich in m-SWNTs is applied onto said substrate, the thin film formed is processed with hydrochloric acid.
[claim3]
3. A method for producing a transparent electroconductive thin film as claimed in claim 1, wherein a large number of the single-walled carbon nanotubes of the film are individually separated and uniformly dispersed in the film as kept in contact with each other while randomly crosslinked therein, and there are no aggregates of single-walled nanotubes.
[claim4]
4. A method for producing a transparent electroconductive thin film as claimed in any of claims 1 to 3, wherein the amine is at least one selected from primary amines, secondary amines, tertiary amines and aromatic amines.
[claim5]
5. A method for producing a transparent electroconductive thin film a$ claimed in any of claims 1 to 4, wherein the amine is at least one selected from isopropylamine, diethylamine, propylamine, 1-methylpropylamine, triethylamine and N,N,N',N'-tetramethylenediamine.
[claim6]
6. A method for producing a transparent electroconductive thin film as claimed in any of claims 1 to 5, wherein the single-walled carbon nanotubes are dispersed in the amine solution while ultrasonically processed.
[claim7]
7. A method for producing a transparent electroconductive thin film as claimed in any of claims 1 to 6, wherein the dispersion rich in m-SWNTs is sprayed onto the substrate with an air brush to form a thin film thereon.
[claim8]
8. A method for producing a transparent electroconductive thin film as claimed in any of claims 1 to 7, wherein the dispersion is centrifuged under the condition of from 40,000 to 100,000 G and for 1 to 168 hours.
  • 出願人(英語)
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • MAEDA YUTAKA
  • AKASAKA TAKESHI
国際特許分類(IPC)
指定国 Contracting States: AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MT NL NO PL PT RO SE SI SK TR
参考情報 (研究プロジェクト等) PRESTO Search for nanomanufacturing technology and its development AREA
ライセンスをご希望の方、特許の内容に興味を持たれた方は、問合せボタンを押してください。

PAGE TOP

close
close
close
close
close
close