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Substrate with organic thin film and transistor using same 新技術説明会

外国特許コード F110004089
整理番号 N071-06WO
掲載日 2011年7月8日
出願国 欧州特許庁(EPO)
出願番号 05721687
公報番号 1737045
公報番号 1737045
出願日 平成17年3月24日(2005.3.24)
公報発行日 平成18年12月27日(2006.12.27)
公報発行日 平成27年11月4日(2015.11.4)
国際出願番号 JP2005006199
国際公開番号 WO2005091377
国際出願日 平成17年3月24日(2005.3.24)
国際公開日 平成17年9月29日(2005.9.29)
優先権データ
  • 2005JP006199 (2005.3.24) WO
  • 特願2004-088077 (2004.3.24) JP
発明の名称 (英語) Substrate with organic thin film and transistor using same 新技術説明会
発明の概要(英語) A substrate having organic thin film capable of growing two dimensionally such organic thin film as C 60 and a transistor using the same are constituted with a substrate (1) having organic thin film by sequentially depositing a buffer layer (3) and organic thin film (4) on the substrate (2), and with the buffer layer orienting the organic thin film (4).
A layer easily oriented with the substrate (2) and the buffer layer (3) may be inserted between the substrate (2) and the buffer layer (3).
A sapphire substrate as the substrate (2), pentacene or pentacene fluoride as the buffer layer (3), and C 60 or rubrene as the organic thin film (4) may be used, thereby C 60 or rubrene two dimensional thin film of high quality can be obtained.
By using such a substrate (1) having organic thin film, a field effect transistor of high quality can be realized.
特許請求の範囲(英語) [claim1]
1. A substrate (1, 10) having an organic thin film (4), wherein: a buffer layer (3) and the organic thin film (4) are sequentially deposited on an insulating substrate (2) so that the organic thin film (4) overlies the buffer layer (3),
said buffer layer (3) consists essentially of either pentacene or pentacene fluoride, characterized in that: said organic thin film (4) is either C n fullerene, wherein n is an integer of 60 or more, or rubrene; and said buffer layer (3) has a thickness of about 1 to 10 molecular layers.
[claim2]
2. The substrate (1, 10) having an organic thin film as set forth in claim 1, wherein a layer (5) is further inserted between said substrate (2) and said buffer layer (3).
[claim3]
3. The substrate (1, 10) having an organic thin film as set forth in claim 1, wherein said insulating substrate (2) is a sapphire substrate.
[claim4]
4. The substrate having an organic thin film as set forth in claim 1, wherein said C n fullerene is C 60.
[claim5]
5. The substrate having an organic thin film as set forth in claim 3, wherein the surface roughness of said sapphire substrate is about the same as the molecular layer of the material to be said buffer layer (3) or even lower.
[claim6]
6. A transistor (20, 30) provided with an organic thin film formed on a substrate according to any of claims 1 to 5, wherein said organic thin film (4) is a channel of said transistor.
  • 出願人(英語)
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • KOINUMA HIDEOMI
  • ITAKA KENJI
  • YAMASHIRO MITSUGU
国際特許分類(IPC)
欧州特許分類/主・副
  • B82Y010/00
  • H01L051/00A2F
  • H01L051/05B2B6
  • T01L051/00M4B
  • T01L051/05B2B10B
  • T01L051/05B2B4
指定国 Contracting States: DE FR GB
参考情報 (研究プロジェクト等) CREST Development of Advanced Nanostructured Materials for Energy Conversion and Storage AREA
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