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SQUID MAGNETIC SENSOR 新技術説明会

外国特許コード F110004330
整理番号 S2009-0653-C0
掲載日 2011年7月14日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2010JP002665
国際公開番号 WO 2010/122733
国際出願日 平成22年4月13日(2010.4.13)
国際公開日 平成22年10月28日(2010.10.28)
優先権データ
  • 特願2009-105709 (2009.4.23) JP
発明の名称 (英語) SQUID MAGNETIC SENSOR 新技術説明会
発明の概要(英語) Provided is a directly coupled high-temperature superconducting SQUID magnetic sensor which has a thin film single layer structure and stably operates with a high sensitivity even in a magnetic field by suppressing a magnetic flux trap or jump generated in the sensor in the magnetic field and preventing the performance of the SQUID magnetic sensor from deteriorating. The superconducting quantum interference device magnetic sensor is provided with: a bicrystal substrate (1) having a bicrystal grain boundary coupling section; pickup loops (7a-7d) formed of a first high-temperature superconducting thin film on the bicrystal substrate (1); and a SQUID ring (3), which is formed of the first high-temperature superconducting thin film directly connected to the pickup loops (7a-7d), on the bicrystal grain boundary coupling section. A plurality of the pickup loops (7a-7d) are provided at positions not overlapping the bicrystal grain boundary coupling sections with a bicrystal grain boundary line (2) at the center.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • National University Corporation TOYOHASHI UNIVERSITY OF TECHNOLOGY
  • 発明者(英語)
  • HATSUKADE, Yoshimi
  • TANAKA, Saburo
  • KANAI, Sho
国際特許分類(IPC)
指定国 AE(UTILITY MODEL),AG,AL(UTILITY MODEL),AM(PROVISIONAL PATENT)(UTILITY MODEL),AO(UTILITY MODEL),AT(UTILITY MODEL),AU,AZ(UTILITY MODEL),BA,BB,BG(UTILITY MODEL),BH(UTILITY MODEL),BR(UTILITY MODEL),BW,BY(UTILITY MODEL),BZ(UTILITY MODEL),CA,CH,CL(UTILITY MODEL),CN(UTILITY MODEL),CO(UTILITY MODEL),CR(UTILITY MODEL),CU(INVENTOR'S CERTIFICATE),CZ(UTILITY MODEL),DE(UTILITY MODEL),DK(UTILITY MODEL),DM,DO(UTILITY MODEL),DZ,EC(UTILITY MODEL),EE(UTILITY MODEL),EG(UTILITY MODEL),ES(UTILITY MODEL),FI(UTILITY MODEL),GB,GD,GE(UTILITY MODEL),GH(UTILITY CERTIFICATE),GM,GT(UTILITY MODEL),HN(UTILITY MODEL),HR(CONSENSUAL PATENT),HU(UTILITY MODEL),ID,IL,IN,IS,JP(UTILITY MODEL),KE(UTILITY MODEL),KG(UTILITY MODEL),KM,KN,KP(INVENTOR'S CERTIFICATE)(UTILITY MODEL),KR(UTILITY MODEL),KZ(PROVISIONAL PATENT)(UTILITY MODEL),LA,LC,LK,LR,LS(UTILITY MODEL),LT,LU,LY,MA,MD(UTILITY MODEL),ME,MG,MK,MN,MW,MX(UTILITY MODEL),MY(UTILITY-INNOVATION),MZ(UTILITY MODEL),NA,NG,NI(UTILITY MODEL),NO,NZ,OM(UTILITY MODEL),PE(UTILITY MODEL),PG,PH(UTILITY MODEL),PL(UTILITY MODEL),PT(UTILITY MODEL),RO,RS(PETTY PATENT),RU(UTILITY MODEL),SC,SD,SE,SG,SK(UTILITY MODEL),SL(UTILITY MODEL),SM,ST,SV(UTILITY MODEL),SY,TH(PETTY PATENT),TJ(UTILITY MODEL),TM(PROVISIONAL PATENT),TN,TR(UTILITY MODEL),TT(UTILITY CERTIFICATE),TZ,UA(UTILITY MODEL),UG(UTILITY CERTIFICATE),US,UZ(UTILITY MODEL),VC(UTILITY CERTIFICATE),VN(PATENT FOR UTILITY SOLUTION),ZA,ZM,ZW,EP(AT,BE,BG,CH,CY,CZ,DE,DK,EE,ES,FI,FR,GB,GR,HR,HU,IE,IS,IT,LT,LU,LV,MC,MK,MT,NL,NO,PL,PT,RO,SE,SI,SK,SM,TR),OA(BF(UTILITY MODEL),BJ(UTILITY MODEL),CF(UTILITY MODEL),CG(UTILITY MODEL),CI(UTILITY MODEL),CM(UTILITY MODEL),GA(UTILITY MODEL),GN(UTILITY MODEL),GQ(UTILITY MODEL),GW(UTILITY MODEL),ML(UTILITY MODEL),MR(UTILITY MODEL),NE(UTILITY MODEL),SN(UTILITY MODEL),TD(UTILITY MODEL),TG(UTILITY MODEL)),AP(BW(UTILITY MODEL),GH(UTILITY MODEL),GM(UTILITY MODEL),KE(UTILITY MODEL),LR(UTILITY MODEL),LS(UTILITY MODEL),MW(UTILITY MODEL),MZ(UTILITY MODEL),NA(UTILITY MODEL),SD(UTILITY MODEL),SL(UTILITY MODEL),SZ(UTILITY MODEL),TZ(UTILITY MODEL),UG(UTILITY MODEL),ZM(UTILITY MODEL),ZW(UTILITY MODEL)),EA(AM,AZ,BY,KG,KZ,MD,RU,TJ,TM)
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