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Cpp-type giant manetoresistance effect element and magnetic component and magnetic device using it

外国特許コード F110004770
整理番号 A241-17KR
掲載日 2011年7月21日
出願国 大韓民国
出願番号 20057014057
公報番号 20050095881
公報番号 100713089
出願日 平成17年7月29日(2005.7.29)
公報発行日 平成17年10月4日(2005.10.4)
公報発行日 平成19年5月2日(2007.5.2)
国際出願番号 JP2004000594
国際公開番号 WO2004068607
国際出願日 平成17年7月29日(2005.7.29)
国際公開日 平成16年8月12日(2004.8.12)
優先権データ
  • 特願2003-024981 (2003.1.31) JP
  • 特願2003-137945 (2003.5.15) JP
発明の名称 (英語) Cpp-type giant manetoresistance effect element and magnetic component and magnetic device using it
発明の概要(英語) A CPP-type giant magnetoresistance effect element and a magnetic component and a magnetic device capable of delivering a giant magnetoresistance effect by a film-surface-vertical- direction spin-dependent current, the CPP-type giant magnetoresistance effect element (10, 20, 50) having a laminate structure comprising an anti-ferromagnetic layer (9), a ferromagnetic fixed layer (11, 11A), a non-magnetic conductive layer (12) and a ferromagnetic free layer (13, 13A), wherein the ferromagnetic free layer (13, 13A) comprises a first magnetic layer (14, 14A) and a second magnetic layer (16, 16A) bonded together in a magnetically anti-parallel manner via a magnetic bonding element (15, 15A), and is formed so that the magnetization (17, 17') of the first magnetic layer (14, 14A) and the magnetization (18, 18A) of the second magnetic layer (16, 16A) are different in intensity.
An upward spin electron (5) and a downward spin electron (6) are spin- dependent-scattered based on the magnetization directions of the ferromagnetic fixed layer (11, 11A) and the ferromagnetic free layer (13, 13A) to increase a CPP-GMR via a conduction paths (1, 2, 3, 4).
In a CPP- type giant magnetoresistance effect element (30) comprising a ferromagnetic fixed layer (11), a non-magnetic conductive layer (12) and a ferromagnetic free layer (13A), a layer (21) consisting of one or at least two kinds out of ruthenium, iridium, rhodium, rhenium and chromium may be provided between the ferromagnetic fixed layer (11) and the non- magnetic conductive layer (12) and/or on the surface of the ferromagnetic free layer (13A).
特許請求の範囲(英語) [claim1]
1. Having a strong magnetic pinned layer and nonmagnetic conductive layer a free ferromagnetic layer and C P P giant Magnetoresistive sensor type,

Above free Ferromagnet, magnetic tt! Univ of S coalescence via magnetically coupled antiferromagnetically when is is magnetization reversal possible in anti-parallel state maintained first ferromagnetic layer and layer-1 magnetic domain security must have different first ferromagnetic layer and a second magnetic layer, as well as to features, C P P-type giant magnetoresistance devices.
[claim2]
2. Formation of Interfacial magnetic coupling of strong magnetic wherein in scattering wherein ferromagnetic fixed layer of spin dependent current, based on spin-dependent electronic characteristics shall have a claim 1 C F P type giant magneto resistive element.
[claim3]
3. Wherein free ferromagnetic layer in multilayer stacked C F P ― GM R a big thing that characterized the claim 1 or 2 mentioned C P P type giant magneto resistive element.
[claim4]
4. ASU pettanko ratios wherein ferromagnetic free layer of magnetic tier 1 and tier 2 magnetic under 2 to feature, wherein one of the 1-3 and described C P P-type giant magneto resistive element.
[claim5]
5. Wherein ferromagnetic coupling 5 work of metal and 5 in one work of semiconductor layers are features to the claim 1-4 and described C P P-type giant magneto resistive element.
[claim6]
6. Characteristics to be one wherein ferromagnetic coupling with ruthenium, Iridium, rhodium, rhenium and chrome, or these alloys and bearing Union, wherein one of the 1st to 5th and described C P P-type giant magneto resistance anti element.
[claim7]
7. Wherein magnetic coupling body thickness is 1. 5 n m or less to feature, wherein one of the 1-6 and described C P P-type giant magneto resistive element.
[claim8]
8. Said 3 / 43 / 4 work of electrically conductive layer copper large spin-dependent scattering caused by that characterized the claims 1-7 are described C P F-type giant magneto resistive element.
[claim9]
9. Spin-valve type wherein ferromagnetic fixing a layer with ferromagnetic layers and Antiferromagnetic layers adjacent to this claim that strong magnetic pinned layer that characterized the 1-8 and or to mentioned C P P type giant magneto resistive element.

1 0. Ferromagnet fixation and ^ C F P giant magneto resistance elements of electrically conductive layer and free ferromagnetic layer having,

Of the above fixed Ferromagnet, through magnetic coupling of a magnetically coupled antiparallel magnetization when, but C P P type giant magneto resistor having a first magnetic layer different with the first magnetic layer that characterized the.

1 1. Magnetization reversal possible in retaining the anti-parallel State, as well as having a first magnetic layer wherein ferromagnetic freedom, the layer is magnetic 1 / 2 his Union through different joins the magnetic ¨ spoonful large antiparallel magnetically and with ferromagnetic bilayer magnetization of a ferromagnetic layer 1 and Layer 2 magnetic characteristics, claims 1 to 0 in C P F-type giant magnetoresistance devices.

1 2. Claim 1 wherein magnetic domain tt Gil coalesce from attentional metal layer, consisting of ruthenium, Iridium, rhodium, rhenium and chrome kind or more than 2 to feature a 0 or 1 on 1 in C F P-type giant magnetoresistance devices.

1 3. Having a strong magnetic pinned layer and conductive layer and free ferromagnetic layer and C F P giant Magnetoresistive sensor type,

Between the above strong magnetic pinned layer and above sui with conductive layers, and kind of ruthenium, Iridium, rhodium, rhenium and chrome on the surface of or above free ferromagnetic layer also is C P P type giant magneto resistor features to layer consisting of 2 or more,.

1 4. Claim 1-1 have mentioned C P P-type giant magneto resistive sensor in any of the 3 I C P P-type giant Magnetoresistive sensor using magnetic parts and features.

1 5. Magnetic heads recording medium leakage magnetic field to detect and read the information at the

Claim 1 wherein-1 3 of magnetization reversal above medium leakage magnetic field due to ferromagnetic free layer of C in F F-type giant Magnetoresistive sensor, based on the spin-dependent scattering sensor e C P P ― heads on magnetic characteristics to GM R is expressed, to detect the orientation of the magnetic field of the above storage media as a change in the electrical resistance.

1 6. Features to let oncoming said recording medium wherein ferromagnetic free layer of no. 2 magnetic side, said recording medium leakage magnetic field to detect, claims 1 to 5 description of-choose the.

1 7. Claim 1 to detect leakage magnetic field, said recording medium let facing fault plane wherein ferromagnetic free layer in laminated structures appear to feature the six magnetic described from overhead.

1 8. Features to be used also for magnetic shield against the said recording medium leakage magnetic field sensor electronic supply above C P F-type giant Magnetoresistive sensor electrodes, claim 1 5-1 6 one magnetic described from overhead.

1 9. Claim 1-1 have mentioned C P F-type giant magneto resistive sensor in any of the 3 I C P P-type giant Magnetoresistive sensor using magnetic devices to feature.

2 0. Said claims 1-1 feature to Word and bit lines intersect in one of three listed C P P type giant magneto resistive element provided by the non-volatile memory, magnetic storage devices.

2 1. Features to free ferromagnetic layer on magnetic ¨ must possible reversal by spin injection from the preceding Word line, claim 2 to 0 in magnetic storage devices.
  • 出願人(英語)
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • INOMATA KOUICHIRO
  • TEZUKA NOBUKI
国際特許分類(IPC)
参考情報 (研究プロジェクト等) CREST Creation of Nanodevices and System Based on New Physical Phenomena and Functional Principles AREA
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