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Growth of planar non-polar (1-100) m-plane gallium nitride with metalorganic chemical vapor deposition (mocvd) 実績あり

外国特許コード F110004795
整理番号 E06714WO
掲載日 2011年7月21日
出願国 大韓民国
出願番号 20077030279
公報番号 20080014077
出願日 平成19年12月26日(2007.12.26)
公報発行日 平成20年2月13日(2008.2.13)
国際出願番号 US2006020995
国際公開番号 WO2006130622
国際出願日 平成19年12月26日(2007.12.26)
国際公開日 平成18年12月7日(2006.12.7)
優先権データ
  • 60/685,908P (2005.5.31) US
発明の名称 (英語) Growth of planar non-polar (1-100) m-plane gallium nitride with metalorganic chemical vapor deposition (mocvd) 実績あり
発明の概要(英語) A method of growing planar non-polar m-plane Ill-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the Ill-Nitride material is grown on a suitable substrate, such as an m-plane silicon carbide (m-SiC) substrate, using metalorganic chemical vapor deposition (MOCVD).
The method includes performing a solvent clean and acid dip of the substrate to remove oxide from the surface, annealing the substrate, growing a nucleation layer such as an aluminum nitride (AlN) on the annealed substrate, and growing the non-polar m-plane Ill-Nitride epitaxial layer on the nucleation layer using MOCVD.
特許請求の範囲(英語) [claim1]
1. A method of growing a planar non-polar m-plane Hi-Nitride epitaxial film, comprising:
(a) growing non-polar m- { 1 - 100} plane Ill-Nitride on a suitable substrate using metalorganic chemical vapor deposition (MOCVD).
[claim2]
2. The method of claim 1, wherein the substrate comprises an m-silicon carbide (SiC) substrate.
[claim3]
3. The method of claim 1 , wherein the non polar m-plane Ill-Nitride comprises m-plane gallium nitride (GaN).
[claim4]
4. The method of claim 1, further comprising performing a solvent clean and acid dip of the substrate to remove oxide from the substrate surface prior to the growing step.
[claim5]
5. The method of claim 1, further comprising annealing the substrate prior to the growing step.
[claim6]
6. The method of claim 1, further comprising growing a nucleation layer on the substrate and growing the non-polar m-plane Ill-Nitride on the nucleation layer.
[claim7]
7. The method of claim 1 , wherein the nucleation layer comprises aluminum nitride (AlN).
[claim8]
8. The method of claim 1, further comprising:
(1) annealing the substrate;

(2) growing a nucleation layer on the substrate after the annealing step; and
(3) growing the non polar m-plane Ill-Nitride on the nucleation layer.
[claim9]
9. The method of claim 1, wherein the non-polar m-plane Ill-Nitride is a planar epitaxial layer.
[claim10]
10. A device, wafer, substrate or template fabricated using the method of claim 1.
[claim11]
11. A method of growing a planar non-polar m-plane Ill-Nitride epitaxial film, comprising:
(a) growing non-polar m-plane Ill-Nitride on a suitable substrate using metalorganic chemical vapor deposition (MOCVD), comprising:
(1) performing a solvent clean and acid dip of the substrate to remove oxide from the substrate surface;
(2) annealing the substrate after performing the solvent clean and acid dip;
(3) growing a nucleation layer on the substrate after the annealing step; and
(4) growing a planar epitaxial layer of the non polar m-plane Ill- Nitride on the nucleation layer.
  • 出願人(英語)
  • UNIVERSITY OF CALIFORNIA
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • IMER BILGE M
  • SPECK JAMES S
  • DENBAARS STEVEN P
  • NAKAMURA SHUJI
国際特許分類(IPC)
参考情報 (研究プロジェクト等) ERATO NAKAMURA Inhomogeneous Crystal AREA
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