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Field-effect transistor, single electron transistor, and sensor using same

外国特許コード F110004814
整理番号 A242-23WO
掲載日 2011年7月22日
出願国 大韓民国
出願番号 20067004025
公報番号 20060036487
公報番号 100746863
出願日 平成18年2月27日(2006.2.27)
公報発行日 平成18年4月28日(2006.4.28)
公報発行日 平成19年8月7日(2007.8.7)
国際出願番号 JP2004012402
国際公開番号 WO2005022134
国際出願日 平成18年2月27日(2006.2.27)
国際公開日 平成17年3月10日(2005.3.10)
優先権データ
  • 特願2003-307798 (2003.8.29) JP
発明の名称 (英語) Field-effect transistor, single electron transistor, and sensor using same
発明の概要(英語) A sensor for detecting a substance to be detected.
The sensor includes a field-effect transistor (1A) having a substrate (2), a source electrode (4) and a drain electrode (5) both installed on the substrate (2), and a channel (6) to serve as a current path between the source electrode (4) and the drain electrode (5).
The field-effect transistor (1A) further includes an interaction sensing gate (9) for immobilizing a specific substance (10) interactive selectively with the substance to be detected and a gate (7) to which a voltage is applied so that the interaction is detected as a characteristic variation of the field-effect transistor (1A).
Such a structure enables a sensor to detect a substance to be detected with a high detection sensitivity.
特許請求の範囲(英語) [claim1]

[1] Board and the Board provided source and drain electrodes and source electrodes above and shall have field-effect transistors with channel drain electrode current passage and to detect the target substance detection sensor in the

The field-effect transistor is

And to fix the detected substances and substances interacting selectively mutual interaction detection gates

The interaction detection as a change in the characteristics of the field-effect transistor voltage applied with the gate

Sensor features to the.

[2] the channel comes from the structure of carbon nanotubes

Claim 1 to feature in Tuesday's.

[3] of carbon nanotube structure, carbon nanotubes, boronnightlidonano tube.

, And selected from the group consisting of nanotubular structure

Features to the claim 2, sensor mentioned.

Structure of carbon nanotubes [4] the electric characteristics with semiconducting properties

Claim 2 to feature or claim 3 in sensor.

[5] Board and the Board provided source and drain electrodes and source electrodes above and shall, by having a single-electron transistors with channel drain electrode current passages, to detect the target substance detection sensor

But the single-electron transistors

And to fix the detected substances and substances interacting selectively mutual interaction detection gates

The interaction detection as a variation of the single electron transistor voltage applied with the gate

Sensor features to the.

[6] the channel comes from the structure of carbon nanotubes

Features to the claim 5, described Tuesday's.

[7] carbon nanotube-shaped structure, selected from the carbon nanotube, boronnightlidonano tube, and the group consisting of Titania nanotube structures

Claim 6 characterized to the mentioned sensors.

Structure of carbon nanotubes [8] the defects have been introduced

It features to the claim 6 or claim 7 sensor mentioned.

Structure of carbon nanotubes [9] the electrical properties have properties of metals

Claim 6 characterized to the paragraph (1) or 8 sensor mentioned.

At the other gate differs from the gate [10] the mutual interaction detection gates

Claim 1 or 9 mentioned in paragraph (1), and the characteristics of the sensor.

Noise gate built in the side gate built on the channel side top gate [11] above the other gates are built on the surface of the substrate, the substrate surface, and on the reverse side and what is

Features to the claim 10, described Tuesday's.

In a State that apart from the channel power substrate [12] the above source electrode and a drain electrode during instrumentation are arranged

Features to the claim 1 and 11 (1) to the power sensor mentioned.

[13] the channel force at room temperature between the source and drain electrodes above sagged with impose

Features to the claim 1 and 12 (1) to the power sensor mentioned.

[14] the Board, insulation Board, the

Features to the claims 1 and 13 in force paragraph 1 stated sensor.

[15] the channel coated with insulation materials

Claims to be 1 and 14 or paragraph (1) of sensor.

Low dielectric insulating material layer is formed between [16] the channel and the mutual interaction detection gate,

Features to the claim 1 of 15 sensor power, paragraph (1) in the mentioned.

Wherein characteristic to dielectric insulating material layer is formed, [17] the channel and the gate between the 1 and 16, paragraph (1) in the mentioned in Tuesday's.

[18] the mutual interaction detection gate, immobilized specific materials

Features to the claim 1 of 17 in force paragraph 1 stated sensor.

[19] Board and the Board provided source and drain electrodes and source electrodes above and Navigator, in field-effect transistors used for detecting target substance detecting channel become a current path between the drain electrode and sensor

And to fix the detected substances and substances interacting selectively mutual interaction detection gates

The interaction detection as a change in the characteristics of the field-effect transistor voltage applied with the gate

Field-effect transistor characteristics to the.

Field-effect transistors with channel be established [20] Board, the gate and substrate source and drain electrodes and source electrodes above and drain electrode current passage in the

States that apart from the channel power substrate in above source electrode and a drain electrode wear during the nanotube-shaped structure was arranged with the

Field-effect transistor characteristics to the.

Field-effect transistors with channel on the current path, [21] Board and the gate and substrate provided source and drain electrodes and source electrodes above and drain electrode in the

The channel consists in the structure of carbon nanotubes

Is established between the source and drain electrodes as above, Oh Les sagged to room temperature, the nanotube-shaped structure, with Les, who

Features to the claim 20 in field-effect transistors.

With its own channel on the current path, [22] Board and the gate and substrate provided source and drain electrodes and source electrodes above and drain electrode electric field effect ί TA in

The channel is of carbon nanotube structures, and

Substrate in the insulating Board

Electric field effects ί characteristics to the

Field-effect transistors with channel on the current path, [23] Board and the gate and substrate provided source and drain electrodes and source electrodes above and drain electrode in the

Carbon nanotube-shaped structure which channels are coated with insulation materials

Field-effect transistor characteristics to the.

[24] Board and the Board provided source and drain electrodes and source electrodes above and Navigator, in single-electron transistors used for detecting target substance detecting channel become a current path between the drain electrode and sensor

And to fix the detected substances and substances interacting selectively mutual interaction detection gates

The interaction detection as a variation of the single electron transistor voltage applied with the gate

Single-electron transistor characteristics to the.

And a channel to the current path, [25] Board and the gate and substrate provided source and drain electrodes and source electrodes above and drain electrode, single-electron transistors

States that apart from the channel power substrate in above source electrode and a drain electrode wear during the nanotube-shaped structure was arranged with the

Single-electron transistor characteristics to the.

Features channel to current passage [26] Board and the gate and substrate provided source and drain electrodes and source electrodes above and drain electrode and the single-electron transistors

The channel consists in the structure of carbon nanotubes

Impose a State wherein carbon nanotubes on the structure between the source and drain electrodes as above, Oh Les sagged at room temperature, Les.

To be characterized, claim 25 of single electron transistor.

Single electric with its own channel on the current path, [27] Board and the gate and substrate provided source and drain electrode and the above source electrodes and drain electrodes ", in

The channel is of carbon nanotube structures, and

Substrate in the insulating Board

Single-electron transistor characteristics to the.

Single electron transistor computer with its own channel on the current path, [28] Board and the gate and substrate provided source and drain electrodes and the above SEO Su electrodes and drain electrode in the

That carbon nanotubes-like structure for the channel is coated with insulation materials to feature a single-electron transistor.

Structure of carbon nanotubes [29] the defects have been introduced

Features to the billing section 24 or 28, paragraph (1) in the described single-electron transistor.
  • 出願人(英語)
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • MATSUMOTO KAZUHIKO
  • KOJIMA ATSUHIKO
  • NAGAO SATORU
  • KATOU MASANORI
  • YAMADA YUTAKA
  • NAGAIKE KAZUHIRO
  • IFUKU YASUO
  • MITANI HIROSHI
国際特許分類(IPC)
参考情報 (研究プロジェクト等) CREST Creation of Nanodevices and System Based on New Physical Phenomena and Functional Principles AREA
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