TOP > 外国特許検索 > Tunnel transistor having spin-dependent transfer characteristic and nonvolatile memory using same

Tunnel transistor having spin-dependent transfer characteristic and nonvolatile memory using same

外国特許コード F110004846
整理番号 K02009WO
掲載日 2011年7月22日
出願国 大韓民国
出願番号 20057018609
公報番号 20050116839
公報番号 100737030
出願日 平成17年9月30日(2005.9.30)
公報発行日 平成17年12月13日(2005.12.13)
公報発行日 平成19年7月9日(2007.7.9)
国際出願番号 JP2004004512
国際公開番号 WO2004088753
国際出願日 平成17年9月30日(2005.9.30)
国際公開日 平成16年10月14日(2004.10.14)
優先権データ
  • 特願2003-095600 (2003.3.31) JP
発明の名称 (英語) Tunnel transistor having spin-dependent transfer characteristic and nonvolatile memory using same
発明の概要(英語) A MISFET the channel region of which is a ferromagnetic semiconductor has a feature that the drain current can be controlled by the gate voltage and a feature that the transfer conductance can be controlled by the relative directions of magnetization in the ferromagnetic channel region and the ferromagnetic source (or the ferromagnetic drain, or both the ferromagnetic source and ferromagnetic drain).
As a result, binary information can be stored in the form of the relative magnetization directions, and the relative magnetization directions are electrically detected.
If the magnetism is controlled by the electric field effect of the channel region of a ferromagnetic semiconductor, the current needed to rewrite the information can be greatly reduced.
Thus, the MISFET can constitute a high-performance nonvolatile memory cell suited to high-density integration.
特許請求の範囲(英語) [claim1]
1. Source from a ferromagnetic metal to injection of carriers (hereinafter, referred to strong magnetic source. ) And the barrier was established between injected carriers from the strong magnetic source to drain and wherein strong magnetic source and drain above and the Ferromagnet (hereinafter referred to as 'strong magnetic barrier". ) And transistors have said strong magnetic tunneling barriers formed by applying electric field the strong magnetic tunnel barrier from the previous strong magnetic source control kiyaria to said drain conductive gate electrodes and wherein kiyaria keep said strong magnetic tunnel barrier in the case of electronic and spin-splitting are conduction band energy band edges, wherein kiyaria is hole if said strong magnetic tunnel barrier full valence band edge is spin-splitting and the features.
[claim2]
2. Said strong magnetic barrier between _said_ gate electrode formed ' claims having had gate insulation film to feature the scope paragraph 1 stated transistor.
[claim3]
3. Said strong magnetic barrier is a barrier said strong magnetic wherein strong magnetic source relative magnetization direction same direction or wherein strong magnetic source is in the same spin and wherein strong magnetic barrier wherein energy band edge spin band spin orientations and many cases (hereinafter referred to as "parallel magnetic". ), Said strong magnetic source many spin tunnel barriers, barrier said strong magnetic wherein strong magnetic sources, relative magnetic orientation is opposed to each other direction (on when or if such strong magnetic source of many different spin and wherein strong magnetic barrier wherein energy band edge spin band spin orientations and hereinafter called "antiparallel magnetization". ), Said strong magnetic source of numerous tunneling for spin high barriers formed to feature request-scope (1) or paragraph (2) of transistors.
[claim4]
4. If the said strong magnetic tunnel barriers, said strong magnetic sources, said strong magnetic tunnel barrier and parallel magnetic wherein gate electrode voltage may be applied to (hereinafter the

Called the gate voltage. ) The invoice feature to control said strong magnetic tunneling for spin tunnel random number wherein strong magnetic source

The range, paragraph (1) or paragraph (2) of transistors.
  • 出願人(英語)
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • SUGAHARA SATOSHI
  • TANAKA MASAAKI
国際特許分類(IPC)
参考情報 (研究プロジェクト等) PRESTO Nanostructure and Material Property AREA
ライセンスをご希望の方、特許の内容に興味を持たれた方は、問合せボタンを押してください。

PAGE TOP

close
close
close
close
close
close