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Magnetoresistive element, tunnel barrier layer and method of manufacturing the magnetoresistive element

外国特許コード F110004849
整理番号 K02012WO
掲載日 2011年7月22日
出願国 大韓民国
出願番号 20067019694
公報番号 20060122970
公報番号 100867662
出願日 平成18年9月22日(2006.9.22)
公報発行日 平成18年11月30日(2006.11.30)
公報発行日 平成20年11月10日(2008.11.10)
国際出願番号 JP2005004720
国際公開番号 WO2005088745
国際出願日 平成18年9月22日(2006.9.22)
国際公開日 平成17年9月22日(2005.9.22)
優先権データ
  • 特願2004-071186 (2004.3.12) JP
  • 特願2004-313350 (2004.10.28) JP
発明の名称 (英語) Magnetoresistive element, tunnel barrier layer and method of manufacturing the magnetoresistive element
発明の概要(英語) A single crystal MgO(001) substrate (11) is prepared.
An epitaxial Fe(001) lower electrode (first electrode) (17) having a thickness of 50 nm is deposited on an MgO(001) seed layer (15) at room temperature.
In an ultrahigh vacuum (2x10-8 Pa) state, annealing is preformed at 350°C.
An MgO(001) barrier layer (21) having a thickness of 2 nm is epitaxially deposited on the Fe(001) lower electrode (first electrode) (17) at room temperature by MgO electron beam vacuum deposition.
An Fe(001) upper electrode (second electrode) (23) having a thickness of 10 nm is deposited on the MgO(001) barrier layer (21) at room temperature.
Consecutively, a Co layer (21) having a thickness of 10 nm is deposited on the Fe(001) upper electrode (second electrode) (23).
The Co layer (21) enhances the holding capability of the upper electrode (23) to realize an antiparallel magnetization arrangement.
By microfabrication the above produced sample, Fe(001)/MgO(001)/Fe(001) TMR element is fabricated.
Thus, the output voltage value of an MRAM can be increased.
特許請求の範囲(英語) [claim1]
1.

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A tunnel barrier layer (tunnel barrier layer a) and; And the first ferromagnetic layer having a BCC structure formed on the first surface side of the tunnel barrier layer; A second ferromagnetic layer having a BCC structure formed on the second surface side of the tunnel barrier layer; The inclusion of a magnetic tunnel junction structure has the tunnel barrier layer, single crystal MgOx (001) or (001) crystal plane is preferentially oriented polycrystalline (a poly-crystalline layer in which the (001) crystal plane is preferentially oriented) MgOx (0 <x <1) it characterized in that the magnetoresistive element is formed by a layer.
[claim2]
2.

A tunnel barrier layer comprising a MgO (001) and; First ferromagnetic cheungwa containing the Fe (001) formed on the first surface side of the tunnel barrier layer; A second ferromagnetic layer comprising the Fe (001) formed on the second surface side of the tunnel barrier layer; Equipped with a magnetic tunnel junction structure having the magnetic the MgO (001) layer is a single crystal MgOx (001) or (001) crystal plane is preferentially oriented polycrystalline MgOx (0 <x <1) characterized in that is formed by a layer resistance elements.
[claim3]
3.

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A tunnel barrier layer comprising a MgO (001) and; A first ferromagnetic layer on the tunnel barrier layer of the single crystal Fe or Fe-based alloy having a BCC structure (001) layer or (001) crystal face formed on one surface side of the first formed of the orientation of the polycrystalline layer; The second ferromagnetic layer is a single crystal (001) layer or (001) crystal plane of the Fe-based alloy having a BCC structure or Fe formed on the second surface side of the first tunnel barrier layer made of a polycrystalline orientation layer; It equipped with a magnetic tunnel junction structure, including, wherein the tunnel barrier layer, a single crystal MgOx (001) or (001) crystal plane is preferentially oriented polycrystalline MgOx (0 <x <1), the magnetoresistive element is formed by a layer, conduction band lower end of the tunnel barrier layer and, in the case of the first or second discrete values ​​between the at least Fermi level of the ferromagnetic layer of one of the two (the height of the tunnel barrier) a, MgO (001) layer days complete single crystal ideal value than the magnetoresistive element, characterized in that one of the low.
[claim4]
4.

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A tunnel barrier layer; And the first ferromagnetic layer having a BCC structure formed on the first surface side of the tunnel barrier layer; A second ferromagnetic layer having a BCC structure formed on the second surface side of the tunnel barrier layer; Equipped with a magnetic tunnel junction structure, including the tunnel barrier layer is a single crystal MgO (001) or (001) crystal face the first magnetoresistive element is formed by the orientation of the polycrystalline MgO layer, the conduction band lower end of the tunnel barrier layer and said first or second discrete values ​​(height of the tunnel barrier) between at least the other hand with the Fermi level of the ferromagnetic layer of one of 2 to, MgO (001), characterized in that a lower than the ideal value in the case where the work layer is a complete single crystal the magnetoresistive element according to.
[claim5]
5.

According to claim 3 or 4, wherein the discrete values, the magneto-resistive elements, characterized in that in the range of 0.2~0.5eV.
[claim6]
6.

According to claim 3 or 4, wherein the discrete values, the magneto-resistive elements, characterized in that in the range of 0.10~0.85eV.
[1]

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[claim7]
7. 1And transistors; The magnetoresistive element of any one of claim 1 to claim 6 that can be used as a load of the transistor; Memory device comprising a.
[claim8]
8.

Step of preparing a substrate; A step of depositing a single crystal (001) layer or (001) crystal plane of polycrystalline layer the preferred orientation of the Fe-based alloy having a BCC structure or the 1Fe over the substrate; Wherein 1Fe or top of the Fe-based alloy that owns the BCC structure (001) layer, the single crystal MgOx (001) or (001) crystal plane is preferentially oriented polycrystalline MgOx (0 <x <1), a high vacuum state the tunnel barrier layer made of and in the step of depositing; Single crystal (001) layer or (001) crystal face to the first step to form an orientation layer of a polycrystalline 2Fe or Fe-based alloy having a BCC structure over said tunnel barrier layer; Method for manufacturing a magnetoresistive element comprising a.
[claim9]
9.

MgOx single crystal (001) or (001) crystal plane is a first step of preparing a first substrate made of oriented polycrystalline MgOx (0 <x <1) and; A second step having a first 1Fe or BCC structure over said substrate depositing a single crystal (001) layer or (001) crystal plane of polycrystalline layer the preferred orientation of the Fe-based alloy, and subsequently, performing the annealing for crystallization, and; The Fe-based alloy having the first 1Fe or BCC structure (001) layer over the single crystal MgOx (001) or (001) crystal plane is preferentially oriented polycrystalline MgOx (0 <x <1) depositing a tunnel barrier layer made from a high vacuum state and a third step; A fourth step for a single crystal (001) layer or (001) crystal plane of the Fe-based alloy having a BCC structure or claim 2Fe above the first tunnel barrier layer to form an orientation of the polycrystalline layer; Method for manufacturing a magnetoresistive element comprising a.
[claim10]
10.

According to claim 8 or 9, wherein the first step and the second between the second step, the single crystal MgOx (001) or (001) crystal plane is preferentially oriented polycrystalline MgOx (0 <x <1), the seed layer made of a method of manufacturing a magnetoresistance device comprising the step of growing.
[claim11]
11.

According to claim 8 or 9, wherein the single crystal MgOx (001) or (001) crystal plane is preferentially oriented polycrystalline MgOx (0 <x <1) during the step of forming a tunnel barrier layer made of, the value of x MgOx method of manufacturing a magnetoresistance device comprising the step of adjusting.
[claim12]
12.

Step of preparing a substrate; Process for a single crystal (001) layer or (001) crystal plane of the Fe-based alloy having a BCC structure or the 1Fe deposited over the substrate is the preferred orientation of the polycrystalline layer; Wherein 1Fe or BCC structure over the Fe-based alloy (001) layer having an amorphous (amorphous) form the MgO layer, and not by crystallizing the amorphous (amorphous) MgO layer by a ring monocrystalline MgOx (001) or ( process 001) crystal plane forming a tunnel barrier layer made of a preferentially oriented polycrystalline MgOx (0 <x <1) and; Single crystal (001) layer or (001) crystal face to the first step to form an orientation layer of a polycrystalline 2Fe or Fe-based alloy having a BCC structure over said tunnel barrier layer; Method for manufacturing a magnetoresistive element comprising a.
[claim13]
13.

The method of claim 12, wherein the amorphous (amorphous) MgO layer sputtering (sputtering) by the method, the x value MgOx the manufacturing method of the magneto-resistive element characterized in that it is deposited using the adjusted target.
[claim14]
14.

The method of claim 12, wherein the amorphous (amorphous) during the step of forming the MgO, MgOx the x value adjustment method of the magneto-resistive element characterized in that includes the step of a.
[claim15]
15.

A tunnel barrier layer; A second ferromagnetic layer of the first ferromagnetic layer, amorphous (amorphous) magnetic alloy formed on the second surface side of the tunnel barrier layer made amorphous (amorphous) magnetic alloy formed on the first surface side of the tunnel barrier layer; Equipped with a magnetic tunnel junction structure, including the tunnel barrier layer, the single crystal MgOx (001) or (001) crystal plane is preferentially oriented polycrystalline MgOx (0 <x <1), the magnetic resistance characterized in that the formation by a layer device.
[claim16]
16.
[claim17]
16. The method of claim 15 wherein the conduction band lower end of the tunnel barrier layer, and a discrete value (the height of the tunnel barrier) between the said first or second at least a Fermi energy level of the ferromagnetic layer of one of the, MgO (001) layer is complete single crystal than the ideal value to the magnetoresistive element, characterized in that said low in the case.
[claim18]
17.

A tunnel barrier layer; A first ferromagnetic layer and consisting of amorphous (amorphous) magnetic alloy formed on the first surface side of the tunnel barrier layer; A second ferromagnetic layer of amorphous (amorphous) magnetic alloy formed on the second surface side of the tunnel barrier layer; Equipped with a magnetic tunnel junction structure, including, wherein the tunnel barrier layer, a single crystal MgO (001) or (001) crystal face the first magnetoresistive element is formed by the orientation of the polycrystalline MgO layer, the conduction band lower end of the tunnel barrier layer and, wherein the first or second discrete values ​​between at least the other hand Fermi level of the ferromagnetic layer of one of two (the height of the tunnel barrier) a, MgO (001) the one lower than the ideal value in the case where the work layer is a complete single crystal the magnetoresistive element according to claim.
[claim19]
18.

According to claim 16 or claim 17 wherein the discrete value is, the magnetoresistive element, characterized in that the range of 0.2~0.5eV.
[claim20]
19.

According to claim 16 or claim 17 wherein the discrete value is, the magnetoresistive element, characterized in that the range of 0.10~0.85eV.
[1]
[claim21]
20. 1And transistors; Any magnetoresistive element according to one of claim 15 to claim 19 that can be used as a load of the transistor; Memory device comprising a.
[claim22]
21.

Step of preparing a substrate; A step of depositing a first ferromagnetic layer of the substrate with the top amorphous (amorphous) magnetic alloy; Said first ferromagnetic layer over the amorphous (amorphous) form the MgO layer, and by crystallizing the amorphous (amorphous) MgO layer by annealing the single crystal MgOx (001) or (001) crystal plane is preferentially oriented polycrystalline MgOx (0 <x <1) a step of forming a tunnel barrier layer made of; Depositing a second ferromagnetic layer of the tunnel barrier over the amorphous (amorphous) magnetic alloy; Method for manufacturing a magnetoresistive element comprising a.
[claim23]
22.

The method of claim 21, wherein the single crystal MgOx (001) or (001) x value of MgOx by the process, a sputtering method that the crystal plane is first formed a tunnel barrier layer made of oriented polycrystalline MgOx (0 <x <1) is method for manufacturing a magnetoresistive element, characterized in that using the adjusted target comprising deposition.
  • 出願人(英語)
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • YUASA SHINJI
国際特許分類(IPC)
参考情報 (研究プロジェクト等) PRESTO Nanostructure and Material Property AREA
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