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LIGHT EMITTING TRANSISTOR

外国特許コード F110004872
整理番号 N031-01WO
掲載日 2011年7月22日
出願国 大韓民国
出願番号 20067018929
公報番号 20060135816
公報番号 100850754
出願日 平成18年9月15日(2006.9.15)
公報発行日 平成18年12月29日(2006.12.29)
公報発行日 平成20年8月6日(2008.8.6)
優先権データ
  • 特願2004-038951 (2004.2.16) JP
発明の名称 (英語) LIGHT EMITTING TRANSISTOR
発明の概要(英語)

A light emitting transistor (LEFET) which is a light emitting element having a switching function, can produce a sufficient light emission intensity, and is formed to provide a higher light emission efficiency. Aluminum is used as the material of a drain electrode (25), and gold is used as the material of a source electrode (24). When a voltage is applied to between the source electrode (24) and the drain electrode (25), holes are injected from the source electrode (24) and electrons are injected from the drain electrode (25) respectively into a light emitting layer (26). Holes and electrons are re- coupled, and then the light emitting layer (26) emits light. The turning on/off of light emission is controlled by turning on/off a gate voltage.

Unlike a conventional technique of using gold for a drain electrode, this invention uses aluminum having a smaller work function than gold so that more electrons can be injected into the light emitting layer (26) at a lower voltage. Accordingly, light emission intensity and efficiency are improved.

  • 出願人(英語)
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • TADA HIROKAZU,
  • SAKANOUE TOMO
国際特許分類(IPC)
参考情報 (研究プロジェクト等) CREST Creation and Application of Nano Structural Materials for Advanced Data Processing and Communication AREA
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