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Light emitting diode and laser diode having n-type ZnO layer and p-type semiconductor laser

外国特許コード F110004961
整理番号 E06002KR
掲載日 2011年7月28日
出願国 大韓民国
出願番号 20027009406
公報番号 20020077890
公報番号 100582250
出願日 平成14年7月22日(2002.7.22)
公報発行日 平成14年10月14日(2002.10.14)
公報発行日 平成18年5月23日(2006.5.23)
国際出願番号 JP2001000465
国際公開番号 WO2001056088
国際出願日 平成14年7月22日(2002.7.22)
国際公開日 平成13年8月2日(2001.8.2)
発明の名称 (英語) Light emitting diode and laser diode having n-type ZnO layer and p-type semiconductor laser
発明の概要(英語) It has been confirmed that an n type ZnO film formed on an SrCu 2O2 film will produce diode characteristics, without light emitting from a diode confirmed.
A semiconductor ultraviolet luminous element characterized by comprising a p-n junction formed by laminating one of p-type semiconductors, respectively consisting of SrCu2 O2, CuAlO2 or CuGaO2, on an n-type ZnO layer laminated on a transparent substrate and indicating luminous characteristics.
The transparent substrate is preferably a single crystal substrate, especially, yttria partially stabilized zirconia (YSZ) (111) substrate flattened in an atomic state.
An n-type ZnO film is formed on a transparent substrate at a substrate temperature of 200-1200°C, and a p- type semiconductor layer consisting of SrCu2O2, CuAlO2 or CuGaO2 is further formed on the film.
It may also be possible to form an n-type ZnO film, without heating a substrate, and irradiate the surface of the ZnO film with ultraviolet light to promote crystallization.
© KIPO & WIPO 2007
特許請求の範囲(英語) [claim1]
1. n-only on a transparent substrate laminated band GIAP near specific emission Z ηθ layer on the S r Cu2 ○, 2CuA l ○ 2or C u G a ○ consisting of 2 p-type semiconductor SAC's p formed by stacking one ― consisting of n junctions to ultraviolet luminescence you want o modal.
[claim2]
2. transparent substrate is light-emitting daioodo for claims characterized by single-crystal substrates range stated in paragraph 1.
[claim3]
3. the single-crystal substrates range No. 2 written claims to be flattened in the Atomic yttria parts stabilized zircoyua (YS Z) (111) substrates to feature light-emitting diodes;
[claim4]
4. billing features to transparent electrodes inserted in the transparent substrate and Z ηθ Z nO layer electrode as the range stated in paragraph 1 light-emitting daio 1 de.
[claim5]
5. light-emitting daioodo of claims to feature as a p-type semiconductor layer electrode deposited N I p-type semiconductor layers on the range stated in paragraph 1.
[claim6]
6. layer grown on a transparent substrate heteroetpitakishar indium tin oxide (I TO) transparent conductive electrode negative and you have grown heteroetpitakishar I TO layer on Z n billing features to O layer as a light-emitting layer, Z ηθ layer on p-type semiconductor layer as hole injection layer having on a p-type semiconductor layers N i layer as a positive electrode layer reserves the range stated in paragraph 1 light-emitting daioodo.
[claim7]
7. S r Cu2 monovalent metals S r position less than % 20 atoms replaced by ○ using 2 thin-film ' claim that characterized the range stated in paragraph 1 light-emitting daioodo.
[claim8]
8. on a transparent substrate substrate temperature 200-1 at 200 ° C n-Z ηθ films, and in addition to that on the substrate temperature 200-800 ° C in S r Cu2 ○ manufacturing method of light emitting daioodo of p-type semiconductor layer consisting of 2 films to feature ranges stated in paragraph 1.
[claim9]
9. on a transparent substrate substrate temperature 200-1 at 200 ° C n-Z deposition, n O even that on the substrate temperature 500-800 ° C in C u A 1 ○ 2 or C u G a ○ claims consisting of 2 p-type semiconductor layer film to feature the range stated in paragraph 1 light-emitting daio 1 de fabrication.
[claim10]
10. without having to heat the substrate on a transparent substrate, n-Z nO coating wherein Z n ○ surface irradiated with UV light, crystallization, even that without heating the substrate on the2 ○, C u A 102 or C uG a ○ manufacturing method of light emitting daioodo of claims from 2 p-type semiconductor layer deposition and promote crystallization, irradiation of ultraviolet light in the p-type semiconductor layer that characterized the range stated in paragraph 1.

1 1. And polishing optical single crystal yttria parts stabilized jirukonia (YS Z) 100 0-1 transparent substrates were flattened atomic structure and can be heated to 300 ° C are any claims to feature range 8-paragraph 1 0 1 in luminescence you want Beresford manufacturing methods.

1 2. Only near the band gap on a transparent substrate laminated with natural light-emitting n-Z n O on the2 ○, CuA l o C u G a ○ p _n junctions formed by stacking one consisting of 2 p-type semiconductor in n-type layer Z ηθ heteroetpitakishar grown on single crystal substrates on Mg substitution Z n 〇 heteroetpitakishar grown on and, as hole injection layer having a low carrier concentration of p-type semiconductor, Kiya ' low RIA on a p-type semiconductor layer having high kiyaria concentrations of P-type semiconductor layer that Semiconductor Laser single to feature.
  • 出願人(英語)
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • HOSONO HIDEO
  • OTA HIROMICHI
  • ORITA MASAHIRO
  • KAWAMURA KENICHI
  • SARUKURA NOBUHIKO
  • HIRANO MASAHIRO
国際特許分類(IPC)
参考情報 (研究プロジェクト等) ERATO HOSONO Transparent ElectroActive Materials AREA
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