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Semiconductor device manufacturing method

外国特許コード F110004970
整理番号 RP11P23KR
掲載日 2011年7月28日
出願国 大韓民国
出願番号 20027012377
公報番号 20020097202
公報番号 100865596
出願日 平成14年9月19日(2002.9.19)
公報発行日 平成14年12月31日(2002.12.31)
公報発行日 平成20年10月27日(2008.10.27)
国際出願番号 JP2002000512
国際公開番号 WO2002059980
国際出願日 平成14年9月19日(2002.9.19)
国際公開日 平成14年8月1日(2002.8.1)
発明の名称 (英語) Semiconductor device manufacturing method
発明の概要(英語) A method for manufacturing a semiconductor device, which is a buried-channel region transistor comprising a P-type silicon carbide substrate (1), having a high hot carrier resistance and a high punch-through resistance, or a high channel mobility and immune to changing to a normally-on transistor.
The method comprises the steps of forming a buried channel region (2) and source/drain regions, forming a gate insulating film (7), and exposing the gate insulating film in an atmosphere containing water vapor and heated to above 500.deg.C.
The gate insulating film is formed by thermal oxidization using dry oxygen.
(C) KIPO WIPO 2007
特許請求の範囲(英語) [claim1]
1.

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Configuration with the semiconductor substrate a region of a P-type silicon carbide is formed, the gate showing the configuration and the P-type properties is formed as a gate insulating film on the P-type area electrodes 8 are formed on the gate insulating film, a gate insulating film ( 7) configuration the N-type impurity region formed in the semiconductor layer to form a buried channel region 2 and, adjacent to the gate insulating film and the gate electrode source and drain regions which form the transistor of the following is made with N-type impurity region as a semiconductor device characterized by having, The buried channel region, and source, the step of forming the drain region and, The following step of the process of forming the buried channel region and source and drain regions, forming a gate insulating film, A semiconductor device manufacturing method of the gate insulating film in the next process of forming the gate insulating film, characterized in that it comprises a step in ssoeneun least 500 ° C an atmosphere containing water vapor.
[claim2]
2.

According to claim 1, Ratio of the depth of the junction of the source and drain regions from the interface between the gate insulating film and the silicon carbide and the junction depth of the buried channel region from the interface (Lbc) with a gate insulating film and the silicon carbide (Xj) (Lbc ÷ Xj) a semiconductor device in a range of more than 0.2, more than 1.0, The buried channel region, and source, the step of forming the drain region and, The following step of the process of forming the buried channel region, and source and drain regions, forming a gate insulating film, A semiconductor device manufacturing method of the gate insulating film in the next process of forming the gate insulating film, characterized in that it comprises a step in ssoeneun least 500 ° C an atmosphere containing water vapor.
[claim3]
3.

According to claim 1 or claim 2, The gate electrode, the boron is diffused, the impurity concentration of polycrystalline silicon as a semiconductor device in a range of 1 × 1016cm-3~1 × 1021cm-3, The buried channel region, and source, the step of forming the drain region and, The following step of the process of forming the buried channel region, and source and drain regions, forming a gate insulating film, A semiconductor device manufacturing method of the gate insulating film in the next process of forming the gate insulating film, characterized in that it comprises a step in ssoeneun least 500 ° C an atmosphere containing water vapor.
[claim4]
4.

According to claim 1 or claim 2, The buried channel region, is nitrogen or phosphorus or arsenic is diffused, as a semiconductor device, the maximum impurity concentration is 5 × 1015cm-3~1 × 1018cm-3, And the buried channel region, the step of forming the source and drain regions and, The following step of the process of forming the buried channel region and, source and drain regions, forming a gate insulating film, A semiconductor device manufacturing method of the gate insulating film in the next process of forming the gate insulating film, characterized in that it comprises a step in ssoeneun least 500 ° C an atmosphere containing water vapor.
[claim5]
5.

According to claim 1 or claim 2, The gate electrode, a semiconductor device including a silicide layer of a refractory metal, The buried channel region, and source, the step of forming the drain region and, The following step of the process of forming the buried channel region, and source and drain regions, forming a gate insulating film, A semiconductor device manufacturing method of the gate insulating film in the next process of forming the gate insulating film, characterized in that it comprises a step in ssoeneun least 500 ° C an atmosphere containing water vapor.
[claim6]
6.

According to claim 5, A silicide layer of a refractory metal silicide layer is a semiconductor device of tungsten or molybdenum, or titanium, The buried channel region, and source, the step of forming the drain region and, The following step of the process of forming the buried channel region, and source and drain regions, forming a gate insulating film, Then the process of forming the gate insulating film, the gate insulating film, a method of manufacturing a semiconductor device comprising the step ssoeneun 500 ° C or more in an atmosphere containing water vapor.
[claim7]
7.

According to claim 1 or claim 2, Area that is buried channel region is formed and, between the source region or the drain region, than the maximum impurity concentration in the impurity diffusion region to form a buried channel region, and a region with an impurity concentration less than the impurity concentration of the source region or the drain region a semiconductor device having, The buried channel region, and source, the step of forming the drain region and, The following step of the process of forming the buried channel region, and source and drain regions, forming a gate insulating film, A semiconductor device manufacturing method of the gate insulating film in the next process of forming the gate insulating film, characterized in that it comprises a step in ssoeneun least 500 ° C an atmosphere containing water vapor.
[claim8]
8.

According to claim 7, Region and the buried channel region is formed, between the source region or the drain region, the semiconductor device containing the nitrogen, phosphorus or arsenic impurity concentration diffusion layer of a maximum of 5 × 1016cm-3~5 × 1019cm-3, The buried channel region, and source, the step of forming the drain region and, The following step of the process of forming the buried channel region, and source and drain regions, forming a gate insulating film, A semiconductor device manufacturing method of the gate insulating film in the next process of forming the gate insulating film, characterized in that it comprises a step in ssoeneun least 500 ° C an atmosphere containing water vapor.
[claim9]
9.

According to claim 1 or claim 2, A semiconductor device with a higher impurity concentration than the P type impurity diffusion region of the semiconductor substrate right under adjacent to the region in which the buried channel region is formed, The buried channel region, and source, the step of forming the drain region and, The following step of the process of forming the buried channel region, and source and drain regions, forming a gate insulating film, A semiconductor device manufacturing method of the gate insulating film in the next process of forming the gate insulating film, characterized in that it comprises a step in ssoeneun least 500 ° C an atmosphere containing water vapor.
[claim10]
10.
[claim11]
10. The method of claim 9, A semiconductor device which comprises a very high concentration P-type impurity diffusion layer of the maximum 1 × 1017cm-3~1 × 1019cm-3 is an aluminum or boron impurity concentration of the diffusion region under the region adjacent to the buried channel region is formed, The buried channel region, and source, the step of forming the drain region and, The following step of the process of forming the buried channel region, and source and drain regions, forming a gate insulating film, A semiconductor device manufacturing method of the gate insulating film in the next process of forming the gate insulating film, characterized in that it comprises a step in ssoeneun least 500 ° C an atmosphere containing water vapor.
[claim12]
11.

According to claim 1 or claim 2, A semiconductor device manufacturing method characterized in that a gate insulating film formed by a thermal oxidation method using a dry oxygen (dry oxygen).
[claim13]
12.

According to claim 3, The gate electrode, a semiconductor device including a silicide layer of a refractory metal, The buried channel region, and source, the step of forming the drain region and, The following step of the process of forming the buried channel region, and source and drain regions, forming a gate insulating film, A semiconductor device manufacturing method of the gate insulating film in the next process of forming the gate insulating film, characterized in that it comprises a step in ssoeneun least 500 ° C an atmosphere containing water vapor.
[claim14]
13.

According to claim 3, Area that is buried channel region is formed and, between the source region or the drain region, than the maximum impurity concentration in the impurity diffusion region to form a buried channel region, and a region with an impurity concentration less than the impurity concentration of the source region or the drain region a semiconductor device having, The buried channel region, and source, the step of forming the drain region and, The following step of the process of forming the buried channel region, and source and drain regions, forming a gate insulating film, A semiconductor device manufacturing method of the gate insulating film in the next process of forming the gate insulating film, characterized in that it comprises a step in ssoeneun least 500 ° C an atmosphere containing water vapor.
[claim15]
14.

According to claim 3, A semiconductor device with a higher impurity concentration than the P type impurity diffusion region of the semiconductor substrate right under adjacent to the region in which the buried channel region is formed, The buried channel region, and source, the step of forming the drain region and, The following step of the process of forming the buried channel region, and source and drain regions, forming a gate insulating film, A semiconductor device manufacturing method of the gate insulating film in the next process of forming the gate insulating film, characterized in that it comprises a step in ssoeneun least 500 ° C an atmosphere containing water vapor.
[claim16]
15.

According to claim 3, A semiconductor device manufacturing method characterized in that a gate insulating film formed by a thermal oxidation method using a dry oxygen (dry oxygen).
[claim17]
16.

According to claim 4, A semiconductor device manufacturing method characterized in that a gate insulating film formed by a thermal oxidation method using a dry oxygen (dry oxygen).
  • 出願人(英語)
  • NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • SANYO ELECTRIC
  • 発明者(英語)
  • FUKUDA KENJI
  • ARAI KAZUO
  • SENZAKI JUNJI
  • HARADA SHINSUKE
  • KOSUGI RYOJI
  • ADACHI KAZUHIRO
  • SUZUKI SEIJI
国際特許分類(IPC)
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