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Method for reactive-ion etching and apparatus therefor 実績あり

外国特許コード F110004985
整理番号 Y9803GB
掲載日 2011年8月2日
出願国 英国
出願番号 9820639
公報番号 2331273
公報番号 2331273
出願日 平成10年9月22日(1998.9.22)
公報発行日 平成11年5月19日(1999.5.19)
公報発行日 平成28年6月22日(2016.6.22)
優先権データ
  • 特願1997-256635 (1997.9.22) JP
  • 特願1997-256636 (1997.9.22) JP
発明の名称 (英語) Method for reactive-ion etching and apparatus therefor 実績あり
発明の概要(英語) Magnetic materials (eg Fe-Ni alloy, Co-Cr alloy or Fe) are etched with a CO-NH 3 gas plasma using a mask formed by vacuum deposition.
The mask may be Ti, Mg, Al, Ge, Pt, Pd or an alloy or compound thereof.
The metallic parts of the reactive ion etch chamber comprise Ti, Al or an alloy thereof.
特許請求の範囲(英語) [claim1]
1. A method for reactive ion etching a magnetic material with a plasma of a mixed gas of carbon monoxide and a nitrogen-containing compound, said method comprising a step, in which a multilayered film comprising a magnetic material thin film having thereon a resist film formed on a substrate is exposed to an electron beam and then developed, to form a pattern on said resist film, a step, in which a mask material is vacuum deposited, a step, in which said resist is dissolved, to form a mask, and a step, in which a part of said magnetic material thin film that is not covered with said mask is removed by reactive ion etching with a plasma of a mixed gas of carbon monoxide and a nitrogen-containing compound, to form a pattern on said magnetic material thin film, and thus obtaining said magnetic material thin film finely worked.
[claim2]
2. A method for reactive ion etching as claimed in claim 1, wherein said mask used in said reactive ion etching comprises at least one member selected from the group consisting of titanium, magnesium, aluminum, germanium, platinum, palladium, an alloy comprising at least one of them as a main component, and a compound thereof.

24 3. A method for reactive-ion etching as claimed in claim 1, wherein said mask used in said reactive-ion etching comprises silicon or an alloy comprising silicon as a main component.
[claim3]
4. A method for reactive-ion etching as claimed in claim 1, wherein said mask used in said reactive ion etching comprises a compound of silicon, and is disposed on said pattern formed on said resist film and formed into said mask by a lift off method.
[claim4]
5. An apparatus for reactive-ion etching comprising a reaction vessel and metallic parts contained in said reaction vessel, the whole or a part of which comprises at least one metallic material selected from the group consisting of titanium, aluminum, and an alloy comprising at least one of them as a main component.
[claim5]
6. An apparatus for reactive-ion etching as claimed in claim 5, wherein a surface layer of said whole or a part of said reaction vessel and said metallic parts contained in said reaction vessel comprises said at least one metallic material.
[claim6]
7. An apparatus for reactive-ion etching as claimed in claim 5 or 6, wherein a susceptor for supporting a material to be etched comprises said at least one metallic material.
[claim7]
8. An apparatus for reactiveion etching as claimed in claim 5 or 6, wherein at least one of a high frequency electrode, a high frequency antenna, an ground electrode, a zero potential shield and a protective plate comprises said at leas one metallic material.
  • 出願人(英語)
  • NIMS - NATIONAL INSTITUTE FOR MATERIALS SCIENCE
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • NAKATANI ISAO
国際特許分類(IPC)
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