TOP > 外国特許検索 > Method for reactive ion etching

Method for reactive ion etching 実績あり

外国特許コード F110004986
整理番号 Y9803GB2
掲載日 2011年8月2日
出願国 英国
出願番号 0128508
公報番号 2366766
公報番号 2366766
出願日 平成10年9月22日(1998.9.22)
公報発行日 平成14年3月20日(2002.3.20)
公報発行日 平成28年6月22日(2016.6.22)
優先権データ
  • 9820639 (1998.9.22) GB
  • 特願1997-256635 (1997.9.22) JP
  • 特願1997-256636 (1997.9.22) JP
発明の名称 (英語) Method for reactive ion etching 実績あり
発明の概要(英語) The invention provides a method for reactive-ion etching a magnetic material with a plasma of a mixed gas of carbon monoxide and a nitrogen-containing compound e.g.
NH<SB>3</SB>, the method comprising exposing a multilayered film comprising a magnetic material thin film having thereon a resist film formed on a substrate to an electron beam and then developed, to form a pattern on the resist film, vacuum depositing a mask material, dissolving the resist to form a mask, and removing a part of the magnetic material thin film that is not covered with the mask by reactive ion etching with a plasma of a mixed gas of carbon monoxide and a nitrogen-containing compound, to form a pattern on the magnetic material thin film.
特許請求の範囲(英語) [claim1]
1. A method for reactive ion etching a magnetic material with a plasma of a mixed gas of carbon monoxide and a nitrogen-containing compound, said method comprising a step, in which a multilayered film comprising a magnetic material thin film having thereon a resist film formed on a substrate is exposed to an electron beam and then developed, to form a pattern on said resist film, a step, in which a mask material. is vacuum deposited, a step, in which said resist is dissolved, to form a mask, and a step, in which a part of said magnetic material thin film that is not covered with said mask is removed by reactive ion etching with a plasma of a mixed gas of carbon monoxide and a nitrogen-containing compound, to form a pattern on said magnetic material thin film, and thus obtaining said magnetic material thin film finely worked. 2. A method for reactive ion etching as claimed in claim 1, wherein said mask used in said reactive ion etching comprises at least one member selected from the group consisting of titanium, magnesium, aluminum, germanium, platinum, palladium, an alloy comprising at least one of them as.a main component, and a compound thereof.
[claim2]
3. A method for reactive-ion etching as claimed in claim 1, wherein said mask used in said reactive-ion etching comprises silicon or an alloy comprising silicon as a main component. 4. A method for reactive-ion etching as claimed in claim 1, wherein said mask used in said reactive ion etching comprises a compound of silicon, and is disposed on said pattern formed on said resist film and formed into said mask by a lift off method.
  • 出願人(英語)
  • NIMS - NATIONAL INSTITUTE FOR MATERIALS SCIENCE
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • NAKATANI ISAO
国際特許分類(IPC)
ライセンスをご希望の方、特許の内容に興味を持たれた方は、問合せボタンを押してください。

PAGE TOP

close
close
close
close
close
close