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Quantum nano-structure semiconductor laser

外国特許コード F110005057
整理番号 A042-50US
掲載日 2011年8月18日
出願国 アメリカ合衆国
出願番号 50577003
公報番号 20060056472
公報番号 7463661
出願日 平成15年2月24日(2003.2.24)
公報発行日 平成18年3月16日(2006.3.16)
公報発行日 平成20年12月9日(2008.12.9)
国際出願番号 JP2003001975
国際公開番号 WO2003073570
国際出願日 平成15年2月24日(2003.2.24)
国際公開日 平成15年9月4日(2003.9.4)
優先権データ
  • 特願2002-051548 (2002.2.27) JP
  • 2003WO-JP01975 (2003.2.24) WO
発明の名称 (英語) Quantum nano-structure semiconductor laser
発明の概要(英語) (US7463661)
On a grooved semiconductor substrate having a plurality of V-grooves individually extended in directions perpendicular to a direction Is of advance of an oscillated laser beam and mutually disposed in parallel along the direction Is of advance of the laser beam, a plurality of quantum wires (11) are formed on the V-grooves by selective growth of a Group III-V compound.
The plurality of quantum wires are adapted to serve as limited-length active layer regions mutually disposed in parallel along the direction Is of advance of the laser beam with a period of an integer times of a quarter wavelength in a medium of a laser active layer and individually corresponding to stripe widths of laser.
Consequently, a quantum nano-structure semiconductor laser satisfying at least one, or preferably both, of the decrease of a threshold and the stabilization of an oscillation frequency as compared with a conventional countertype can be provided.
特許請求の範囲(英語) [claim1]
1. A quantum nano-structure semiconductor laser comprising: a grooved semiconductor substrate having a plurality of V-grooves individually extended in directions perpendicular to a direction of advance of an oscillated laser beam and mutually disposed in parallel along the direction of advance of the laser beam;
and
a plurality of quantum wires formed one on each of the V-grooves by selective growth of a Group III-V compound, said plurality of quantum wires being disposed in parallel along the direction of advance of the laser beam with a period of an integer times of a quarter wavelength in a medium of a laser active layer andindividually closed at both ends thereof to form an active layer region of a limited length, which length is equal to a stripe width of the laser.
[claim2]
2. A quantum nano-structure semiconductor laser according to claim 1, wherein a waveguide mode is stabilized by intentionally displacing a period of parallel disposition from said period of an integer times 1/4 instead of disposing said plurality of quantum wires in parallel along said direction of advance of the laser beam with a period of an integer times of the quarter wavelength in the medium of the laser active layer for a broadband wavelength oscillation or short pulse oscillation in a state of mode lock is materialized by promoting compensation of dispersion between oscillation modes.
[claim3]
3. A quantum nano-structure semiconductor laser according to claim 1 or claim 2, wherein said substrate is a GaAs (100) or (311)A substrate;
said V-grooves are limited-length V-grooves formed in a [01-1] direction on the GaAs (100) or (311)A substrate;
said quantum wires are limited-length wires manufactured from GaAs or InGaAs and grown on said limited-length V-grooves;
and said quantum wires are individually furnished with GaAs or AlGaAs clad regions adapted to cover said quantum wires.
[claim4]
4. A quantum nano-structure semiconductor laser according to claim 1 or claim 2, wherein said substrate is an InP (100) or (311)A substrate;
said V-grooves are limited-length V-grooves formed in a [01-1] direction on the InP (100) or (311)A substrate;
said quantum wires are limited-length wires manufactured from InGaAs and grown on said limited-length V-grooves, and said quantum wires are furnished with InAlAs clad areas adapted to cover said quantum wires.
[claim5]
5. A quantum nano-structure semiconductor laser comprising: a grooved Group III-V compound semiconductor substrate having a plurality of V-grooves individually extended in directions perpendicular to a direction of advance of an oscillated laser beam and mutually disposed in parallel along said direction of advance of the laser beam with a period of an integer times of a quarter wavelength in a medium of a laser active layer;
a plurality of InGaAs or InAs quantum dots formed one in each of base parts of said V-grooves by growing InGaAs or InAs on said V-grooves to not less than a critical film thickness, said plurality of quantum dots forming an active layer region of a limited length, which length is equal to a stripe width of the laser;
and
GaAs or AlGaAs layers on said active layer region serving as clad regions.
[claim6]
6. A quantum nano-structure semiconductor laser according to claim 5, wherein a waveguide mode is stabilized by intentionally displacing said period of parallel disposition from said period of an integer times 1/4 instead of disposing the period of parallel disposition of said plurality of V-grooves at an integer times of the quarter wavelength in the medium of said laser active layer, for a broadband wavelength oscillation or short pulse oscillation in a state of mode lock is materialized by promoting compensation for dispersion between oscillation modes.
[claim7]
7. A quantum nano-structure semiconductor laser according to claim 5 or claim 6, wherein said grooved Group III-V compound substrate is a GaAs (100) or (311)A substrate or an InP (100) or (311)A substrate.
[claim8]
8. A quantum nano-structure semiconductor laser according to claim 5 or claim 6, wherein a structure having said quantum dots formed therein is mesa-etched to be transformed into a distributed feedback laser.
[claim9]
9. A quantum nano-structure semiconductor laser according to claim 5 or claim 6, wherein a structure having said quantum dots formed therein has lateral surfaces along said direction of the laser beam imparted with corrugations to be transformed into a distributed feedback laser.
[claim10]
10. A quantum nano-structure semiconductor layer according to claim 5 or claim 6, wherein a structure having said quantum dots formed therein has a plurality of through holes bored therein with a prescribed period along lateral sides leaving behind stripe parts for passing light and along vertical directions individually perpendicular to both said direction of advance of the laser beam and a lateral direction perpendicular thereto.
[claim11]
11. A quantum nano-structure semiconductor laser according to claim 10, wherein said period is 1/2 of the wavelength in the medium.
  • 発明者/出願人(英語)
  • OGURA MUTSUO
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
国際特許分類(IPC)
米国特許分類/主・副
  • 372/44.01
  • 257/E21.108
  • 257/E21.119
  • 257/E29.071
  • 372/43.01
参考情報 (研究プロジェクト等) CREST Quantum Effects and Related Physical Phenomena AREA
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