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N-type semiconductor diamond and its fabrication method

外国特許コード F110005067
整理番号 A051-25US
掲載日 2011年8月18日
出願国 アメリカ合衆国
出願番号 92618800
公報番号 7063742
出願日 平成12年3月27日(2000.3.27)
公報発行日 平成18年6月20日(2006.6.20)
国際出願番号 JP2000001863
国際公開番号 WO2000058534
国際出願日 平成12年3月27日(2000.3.27)
国際公開日 平成12年10月5日(2000.10.5)
優先権データ
  • 特願1999-124682 (1999.3.26) JP
  • 2000WO-JP01863 (2000.3.27) WO
発明の名称 (英語) N-type semiconductor diamond and its fabrication method
発明の概要(英語) (US7063742)
A substrate is polished and made an inclined substrate, which is exposed to a hydrogen plasma and is thereby smoothened.
The substrate is then heated controlledly until it surface temperature reaches 830° C.
Meanwhile, a gas mixture of 1% methane, 50 ppm hydrogen sulfide and hydrogen is introduced in a tubular reaction vessel to flow therethrough at 200 ml/min, where microwave plasma is excited to cause n-type semiconductor diamond to epitaxially grow on the substrate.
An ion doped n-type semiconductor is thus formed that has a single donor level of an activation energy at 0.38 eV and is high in mobility and of high quality.
特許請求の範囲(英語) [claim1]
1. An n-type semiconductor diamond, characterized by a making method comprised of: mechanically polishing a (100) diamond surface to make it in an inclined diamond substrate;
subjecting a surface of said inclined diamond substrate to a hydrogen plasma treatment to make said substrate surface to consist of steps each in the order of an atomic layer;
and subjecting said substrate surface consisted of steps each in the order of an atomic layer to an exited raw material gas made of a volatile hydrocarbon compound, a sulfur compound and a hydrogen gas by a microwave plasma to cause n-type semiconductor diamond to grow epitaxially on said surface consisted of steps each in the order of an atomic layer, wherein said n-type semiconductor has a single donor level of 0.38 eV, which is sufficient to allow operation of said n-type semiconductor diamond as p-n junction device.
[claim2]
2. A method of making an n-type semiconductor diamond, characterized in that it comprises: mechanically polishing a diamond substrate to make it in an inclined diamond substrate, which is formed by mechanically polishing a diamond (100) face oriented substrate so that its face normal is inclined at an angle between 1.5 and 6 degrees with respect to its <100> direction in a plane made by either its <100> and <010> directions or its <100> and <001> directions;
subjecting a surface of said inclined diamond substrate to a hydrogen plasma treatment to make it even;
and exciting a raw material gas made of a volatile hydrocarbon compound, a sulfur compound and a hydrogen gas by a microwave plasma while maintaining at a given temperature said substrate surface smoothened as aforesaid to cause an n-type semiconductor diamond to grow epitaxially on said smoothened substrate.
[claim3]
3. A method of making an n-type semiconductor diamond asset forth in claim 2, characterized in that said diamond substrate is a diamond (100) face oriented substrate.
[claim4]
4. A method of making an n-type semiconductor diamond as set forth in claim 2, characterized in that said hydrogen plasma treatment comprises a treatment of exposing said inclined substrate to the hydrogen plasma of a hydrogen pressure of 10 to 50 Torr and a microwave output of 200 to 1200 W at a substrate temperature of 700 to 1200 deg. C. for a period of 0.5 hours to 5 hours, thereby to make even said substrate surface to consist of steps each in the order of an atomic layer.
[claim5]
5. A method of making an n-type semiconductor diamond as set forth in claim 2, characterized in that said given substrate temperature is between 700 and 1100 deg. C.
[claim6]
6. A method of making an n-type semiconductor diamond as set forth in claim 5, characterized in that said given substrate temperature is 830 deg. C.
  • 発明者/出願人(英語)
  • ANDO TOSHIHIRO
  • SATO YOICHIRO
  • YASU EIJI
  • GAMO MIKA
  • SAKAGUCHI ISAO
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
米国特許分類/主・副
  • 117/101
  • 117/92
  • 117/94
  • 117/103
  • 117/902
  • 117/929
参考情報 (研究プロジェクト等) CREST Single Molecule and Atom Level Reactions AREA
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