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Method for flattening surface of oxide crystal to ultra high degree

外国特許コード F110005086
整理番号 A051-68US
掲載日 2011年8月19日
出願国 アメリカ合衆国
出願番号 46998702
公報番号 20040123794
公報番号 7029528
出願日 平成14年3月15日(2002.3.15)
公報発行日 平成16年7月1日(2004.7.1)
公報発行日 平成18年4月18日(2006.4.18)
国際出願番号 JP2002002488
国際公開番号 WO2002077331
国際出願日 平成14年3月15日(2002.3.15)
国際公開日 平成14年10月3日(2002.10.3)
優先権データ
  • 特願2001-075458 (2001.3.16) JP
  • 2002WO-JP02488 (2002.3.15) WO
発明の名称 (英語) Method for flattening surface of oxide crystal to ultra high degree
発明の概要(英語) (US7029528)
There are provided a method of superflattening an oxide crystal that is soluble neither with acid nor with alkaline, a method of making a ReCa4O(BO3)3 family oxide single crystal thin film using the superflattening method, a ReCa4O(BO3)3 family oxide single crystal thin film having a SHG property, a superflattening method for light incident/emitting surfaces, and a defect assessing method for oxide crystals.
The surface of an oxide crystal that is soluble neither with acid nor with alkaline is reduced with a reducing agent, the reduced oxide crystal surface is dissolved with an aqueous solution of acid or alkaline, the surface dissolved oxide crystal is heat-treated in the atmosphere, whereby the surface of an oxide crystal that is soluble neither with acid nor with alkaline is superflattened to an atomic level.
According to this method, a chemically stable oxide which because of its complexity in both composition and structure is soluble neither with acid nor with alkaline and is insoluble even with a fluoric acid is allowed by reduction to be converted into a simpler oxide conventionally soluble with hydrochloric, nitric or sulfuric acid; hence a surface of its crystal is rendered capable of dissolving.
Then, heat-treating the dissolved surface in the atmosphere at a suitable temperature for a suitable time period allows surface atoms to be rearranged and the surface to be superflattened to an atomic level.
The present invention is applicable to the technical fields that require ultraviolet laser light, especially as core technologies of optical devices applied to optical information processing, optical communication or the like.
特許請求の範囲(英語) [claim1]
1. A method of superflattening a surface of an oxide crystal that is soluble neither with an acid nor with alkaline, characterized in that it comprises the steps of: reducing the surface of the oxide crystal with a reducing agent;
dissolving the reduced oxide crystal surface with an aqueous acid or alkaline solution;
and
heat-treating in the atmosphere the oxide crystal with its reduced surface dissolved,whereby a surface of the oxide crystal soluble neither with acid nor with alkaline is flattened on an atomic level.
[claim2]
2. A method of making a ReCa4O(BO3)3 system oxide single crystal thin film, characterized in that it comprises the steps of: reducing with a reducing agent a surface of an oxide single crystal having a composition expressed by chemical formula: ReCa4O(BO3)3 where Re represents one or more rare earth element;
dissolving the reduced oxide single crystal surface with an aqueous acid or alkaline solution;heat-treating in the atmosphere the oxide single crystal with its reduced surface dissolved, thereby superflattening a surface thereof;
and
epitaxially growing a ReCa4O(BO3)3 thin film on the superflattened surface.
[claim3]
3. An oxide single crystal thin film, characterized in that it comprises a substrate of a first oxide single crystal which is soluble neither with acid nor with alkali but a surface of which is superflattened by reducing such an insoluble surface of the first oxide single crystal with a reducing agent, dissolving the reduced surface of the first oxide single crystal with an aqueous acid or alkaline solution and heat-treating in the atmosphere the first oxide single crystal with its reduced surface dissolved;
and a thin film of a second oxide single crystal which is soluble neither with acid nor with alkaline and which is epitaxially grown on the superfiattened surface of said first oxide single crystal forming said substrate.
[claim4]
4. An oxide single crystal thin film as set forth in claim 3, characterized in that said first oxide crystal forming said substrate and soluble neither with acid nor with alkaline is an oxide single crystal having a composition expressed by chemical formula: ReCa4O(BO3)3 where Re is one or more rare-earth elements and that said second oxide single crystal forming said thin film is an oxide single crystal having a composition expressed by chemical formula: ReCa4O(BO3)3 where Re is one or more rare-earth elements but different from the Re forming the composition of said first oxide single crystal or more than one rare-earth elements identical to but different in composition proportion from those included in the composition of said first oxide single crystal, and that said thin film has a nonlinear optical property.
[claim5]
5. A method of flattening a light incident/emitting surface, characterized in that the surface is of an oxide optical crystal soluble neither with acid nor with alkaline and the method comprises the steps of: reducing a light incident/emitting surface of the oxide optical crystal with a reducing agent;dissolving the reduced oxide optical crystal surface with an aqueous acid or alkaline solution;
and
heat-treating in the atmosphere the oxide optical crystal with its reduced surface dissolved, to thereby flatten the light incoming and outgoing surface,whereby a light-incident/emitting surface of the oxide optical crystal is flattened.
[claim6]
6. A crystal defect assessment method, characterized in that it comprises the steps of: reducing with a reducing agent a surface of an oxide crystal which is soluble neither with acid nor with alkaline;
and
dissolving defects in the reduced oxide crystal surface with an etching solution for etching said defects selectively, thereby forming etch pits of the oxide crystal for assessment of the crystal defects.
  • 発明者/出願人(英語)
  • KOINUMA HIDEOMI
  • MATSUMOTO YUJI
  • SASAKI TAKATOMO
  • MORI YUSUKE
  • YOSHIMURA MASASHI
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
米国特許分類/主・副
  • 117/1
  • 117/2
  • 117/3
  • 117/944
  • 423/277
  • 423/279
参考情報 (研究プロジェクト等) CREST Single Molecule and Atom Level Reactions AREA
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