TOP > 外国特許検索 > Oxide high-critical temperature superconductor acicular crystal and its production method

Oxide high-critical temperature superconductor acicular crystal and its production method

外国特許コード F110005112
整理番号 A061-24US
掲載日 2011年8月23日
出願国 アメリカ合衆国
出願番号 48356202
公報番号 20040171493
公報番号 7008906
出願日 平成14年6月10日(2002.6.10)
公報発行日 平成16年9月2日(2004.9.2)
公報発行日 平成18年3月7日(2006.3.7)
国際出願番号 JP2002005715
国際公開番号 WO2003010369
国際出願日 平成14年6月10日(2002.6.10)
国際公開日 平成15年2月6日(2003.2.6)
優先権データ
  • 特願2001-224741 (2001.7.25) JP
  • 2002WO-JP05715 (2002.6.10) WO
発明の名称 (英語) Oxide high-critical temperature superconductor acicular crystal and its production method
発明の概要(英語) (US7008906)
The present invention relates to a defect-free oxide high-critical temperature superconductor acicular crystal, that is, an oxide high-critical temperature superconductor acicular crystal that is substantially a perfect crystal and also relates to a method for producing the same, wherein such a crystal is essential for achieving superconducting electronic devices.
The oxide high-critical temperature superconductor acicular crystal of the present invention includes an acicular crystal having a Bi2Sr2Ca2Cu3O10 (Bi-2223) crystal structure and is grown from a powder compact by heat-treating the powder compact in an oxygen atmosphere, wherein the powder compact contains an oxide having the Bi-2223 crystal structure and TeO2, CaO, or (SrCa)3TeO6.
The achievement of the acicular crystal having the Bi-2223 crystal structure contributes to the development of superconducting electronic devices that have been theoretically proposed but have not been achieved.
特許請求の範囲(英語) [claim1]
1. A method for producing an oxide high-critical temperature superconductor acicular crystal, comprising a step of heat-treating a powder compact at 840 to 890 deg. C. in an atmosphere containing 5 to 100% of oxygen to grow an acicular crystal having a Bi2Sr2Ca2Cu3O10 crystal structure, wherein the powder compact contains one mol of an oxide having the Bi2Sr2Ca2Cu3O10 crystal structure and 0.2 to 0.8 mol of TeO2.
[claim2]
2. A method for producing an oxide high-critical temperature superconductor acicular crystal, comprising a step of heat-treating a powder compact at 840 to 890 deg. C. in an atmosphere containing 5 to 100% of oxygen to grow an acicular crystal having a Bi2Sr2Ca2Cu3O10 crystal structure, wherein the powder compact contains one mol of an oxide having the Bi2Sr2Ca2Cu3O10 crystal structure, 0.2 to 0.8 mol of TeO2, and 0.1 to 2.0 mol of CaO.
[claim3]
3. A method for producing an oxide high-critical temperature superconductor acicular crystal, comprising a step of heat-treating a powder compact at 840 to 890 deg. C. in an atmosphere containing 5 to 100% of oxygen to grow an acicular crystal having a Bi2Sr2Ca2Cu3O10 crystal structure, wherein the powder compact contains one mol of an oxide having the Bi2Sr2Ca2Cu3O10 crystal structure and 0.2 to 0.8 mol of an oxide having a (SrCa)3TeO6 crystal structure.
  • 発明者/出願人(英語)
  • SATO MITSUNORI
  • YAMASHITA TSUTOMU
  • MAEDA HIROSHI
  • KIM SANGJAE
  • NAGAO MASANORI
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
米国特許分類/主・副
  • 505/450
  • 505/729
参考情報 (研究プロジェクト等) CREST Phenomena of Extreme Conditions AREA
ライセンスをご希望の方、特許の内容に興味を持たれた方は、問合せボタンを押してください。

PAGE TOP

close
close
close
close
close
close