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Method and device for manufacturing semiconductor or insulator-metallic laminar composite cluster

外国特許コード F110005113
整理番号 A061-29US
掲載日 2011年8月23日
出願国 アメリカ合衆国
出願番号 50581303
公報番号 20050173240
公報番号 7638019
出願日 平成15年1月27日(2003.1.27)
公報発行日 平成17年8月11日(2005.8.11)
公報発行日 平成21年12月29日(2009.12.29)
国際出願番号 JP2003000716
国際公開番号 WO2003072848
国際出願日 平成15年1月27日(2003.1.27)
国際公開日 平成15年9月4日(2003.9.4)
優先権データ
  • 特願2002-049310 (2002.2.26) JP
  • 2003WO-JP00716 (2003.1.27) WO
発明の名称 (英語) Method and device for manufacturing semiconductor or insulator-metallic laminar composite cluster
発明の概要(英語) (US7638019)
A semiconductor or nonconductor vapor is generated by sputtering targets 11U, 11D in a first sputtering chamber 10, while a metal vapor is generated by sputtering targets 21U, 21D in a second sputtering chamber 20.
The semiconductor or nonconductor vapor and the metal vapor are aggregated to clusters during travelling through a cluster-growing tube 32 and injected as a cluster beam to a high-vacuum deposition chamber 30, so as to deposit composite clusters on a substrate 35.
The produced composite clusters are useful in various fields due to high performance, e.g. high-sensitivity sensors, high-density magnetic recording media, nano-magnetic media for transportation of medicine, catalysts, permselective membranes, optical-magnet sensors and low-loss soft magnetic materials.
特許請求の範囲(英語) [claim1]
1. A method of producing composite clusters of semiconductor (or nonconductor) shells having metal cores via a plasma-gas condensation process, comprising: generating glow discharge between a pair of targets formed of at least one kind of semiconductor (or nonconductor) material in a first sputtering chamber;
ionizing an inert gas introduced to the first sputtering chamber with the glow discharge;
sputtering the semiconductor (or nonconductor) target with the ionized inert gas to generate semiconductor (or nonconductor) vapor in the first sputtering chamber;
simultaneously generating glow discharge between a pair of targets formed of at least one kind of metal in a second sputtering chamber, which is located in parallel with the first sputtering chamber and independently operated and separated from the first sputtering chamber by a movable partition located between the first and second sputtering chambers, the partition being extendable up to an inner space of a cluster-growing tube connected centrally between the first and second chambers;
ionizing an inert gas introduced to the second chamber with the glow discharge;
sputtering metal targets with the ionized inert gas to generate a metal vapor in the second sputtering chamber;
carrying both semiconductor (or nonconductor) clusters and metal clusters by inert gas from the first and second sputtering chambers directly into the centrally located cluster-growing tube, wherein the movable partition can be extended up to an inner space of the cluster-growing tube to limit coalescing and mixing of the semiconductor (or nonconductor) clusters and the metal clusters to the inner space of the cluster-growing tube, or partially or fully shortened to allow pre-mixing of the clusters between the chambers; and
injecting a cluster beam though a nozzle of the cluster-growing tube to a substrate preset in a high-vacuum deposition chamber, so as to deposit composite clusters on the substrate.
[claim2]
2. The method of claim 1, wherein internal pressures of the sputtering chambers are held at a relatively higher value than the deposition chamber by evacuating inert gas from the deposition chamber with a mechanical booster pump in order to assure a smooth flow of the gaseous mixture though the cluster-growing tube.
[claim3]
3. The method of claim 1, wherein the distance between the nozzle and the substrate is varied by adjusting a handling shaft attached to the substrate.
[claim4]
4. The method of claim 1, wherein a thickness sensor controlled by adjusting a movable shaft attached thereto is provided between the nozzle and the substrate in order to measure a deposition rate of the cluster beam on the substrate and an effective thickness of a deposition layer.
[claim5]
5. The method of claim 1, wherein both the first and second sputtering chambers have a gas-inlet therein for introducing an inert gas to a space between the targets.
[claim6]
6. The method of claim 1, wherein the at least one semiconductor (or nonconductor) target and the at least one metal target are partially covered with a shield to limit a glow-discharging area.
[claim7]
7. An apparatus for producing composite clusters of a semiconductor (or nonconductor) shells having a metal cores via a plasma-gas condensation process, comprising: a first sputtering chamber equipped with a high-frequency power source and a gas supply tube, wherein a set of targets formed of at least one kind of semiconductor (or nonconductor) material is preset for generation of semiconductor (or nonconductor) vapor;
a second sputtering chamber equipped with a direct current power source and a gas supply tube, wherein a set of targets formed of at least one kind of metal is preset for generation of a metal vapor, where the first and second sputtering chambers are placed in parallel;
a cluster-growing tube connected centrally between the first and second chambers;
a movable partition located between the first and second sputtering chambers, that can be extended up to an inner space of the cluster-growing tube to limit coalescing and mixing of semiconductor (or nonconductor) clusters and metal clusters to the inner space of the cluster-growing tube, or partially or fully shortened to allow pre-mixing of the clusters between the chambers;
a high-vacuum deposition chamber connecting with the cluster-growing tube; and
an exit nozzle attached the cluster-growing tube and directed to a substrate preset in the high-vacuum deposition chamber, wherein mixtures of the semiconductor (or nonconductor) clusters and the metal clusters are injected as a cluster beam to the substrate.
[claim8]
8. The apparatus of claim 7, wherein the movable partition is located between the first and second sputtering chambers which, when the movable partition is moved, the change in position of the movable partition affects the formation of the composite clusters, enabling formation of composite clusters with various structures.
[claim9]
9. The apparatus of claim 7, wherein internal pressures of the sputtering chambers are held at a relatively higher value than the deposition chamber by evacuating inert gas from the deposition chamber with a mechanical booster pump in order to assure an effective cooling and a smooth flow of the semiconductor (or nonconductor) and metal vapor through the cluster-growing tube.
[claim10]
10. The apparatus of claim 7, wherein the distance between the nozzle and the substrate is varied by adjusting a handling shaft attached to the substrate.
[claim11]
11. The apparatus of claim 7, wherein a thickness sensor controlled by adjusting a movable shaft attached thereto is provided between the nozzle and the substrate in order to measure a deposition rate of the cluster beam on the substrate and an effective thickness of a deposition layer.
[claim12]
12. The apparatus of claim 7, wherein the first sputtering chamber contains two semiconductor (or nonconductor) targets facing each other with a gap between them and the second sputtering chamber contains two metal targets facing each other with a gap between them, each semiconductor (or nonconductor) target and metal target partially covered with a shield to limit a glow-discharge area.
[claim13]
13. The apparatus of claim 12, wherein both the first sputtering chamber and the second sputtering chamber have gas-inlets therein for introducing an inert gas to a space between the targets.
[claim14]
14. An apparatus for producing composite clusters of semiconductor (or nonconductor) shells having metal cores via a plasma-gas condensation process, comprising: a first sputtering chamber equipped with a high-frequency power source for generation of glow discharge and a gas-inlet for introduction of an inert gas, wherein a set of targets formed of at least one kind of semiconductor (or nonconductor) material is preset for generation of semiconductor (or nonconductor) vapor;
a second sputtering chamber equipped with a direct current power source for generation of glow discharge and a gas-inlet for introduction of an inert gas, wherein the second sputtering chamber is located in parallel with the first sputtering chamber and a set of targets formed of at least one kind of metal is preset for generation of a metal vapor;
a centrally located cluster-growing tube through which the first and second sputtering chambers are directly connected;
a shield that partially covers each target to limit a glow-discharge area;
a movable partition that is located between the first and second sputtering chambers and can be extended up to an inner space of the cluster-growing tube to limit coalescing and mixing or semiconductor (or nonconductor) clusters and metal clusters to the inner space of the cluster-growing tube, or partially or fully shortened to allow pre-mixing of the clusters between the chambers;
a high-vacuum deposition chamber connecting with the cluster-growing tube, wherein internal pressures of the sputtering chambers are held at a relatively higher value than the deposition chamber by evacuating inert-gas from the deposition chamber with a mechanical booster pump in order to assure an effective cooling and a smooth flow of the semiconductor (or nonconductor) and metal vapor through the cluster-growing tube;
a nozzle attached to a top of the cluster-growing tube and directed to a substrate preset in the high-vacuum deposition chamber, wherein composite clusters formed of the semiconductor (or nonconductor) vapor and the metal vapor are injected as a cluster beam to the substrate, and further wherein a distance between the nozzle and the substrate is varied by adjusting a handling shaft attached to the substrate; and
a thickness sensor controlled by adjusting a movable shaft attached thereto between the nozzle and the substrate in order to measure a deposition rate of the cluster beam on the substrate and an effective thickness of a deposition layer.
  • 発明者/出願人(英語)
  • HIHARA TAKEHIKO
  • SUMIYAMA KENJI
  • KATOH RYOJI
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
米国特許分類/主・副
  • 204/192.12
  • 204/192.1
  • 204/192.15
  • 204/298.05
  • 204/298.06
  • 204/298.12
参考情報 (研究プロジェクト等) CREST Phenomena of Extreme Conditions AREA
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