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Oxide high-temperature superconductor and its production method

外国特許コード F110005152
整理番号 A111-22US
掲載日 2011年8月24日
出願国 アメリカ合衆国
出願番号 48741502
公報番号 20040254078
公報番号 7795181
出願日 平成14年9月5日(2002.9.5)
公報発行日 平成16年12月16日(2004.12.16)
公報発行日 平成22年9月14日(2010.9.14)
国際出願番号 JP2002009049
国際公開番号 WO2003023094
国際出願日 平成14年9月5日(2002.9.5)
国際公開日 平成15年3月20日(2003.3.20)
優先権データ
  • 特願2001-270445 (2001.9.6) JP
  • 2002WO-JP09049 (2002.9.5) WO
発明の名称 (英語) Oxide high-temperature superconductor and its production method
発明の概要(英語) (US7795181)
An oxide high temperature superconductor and method of making which includes a first buffer layer composed of CeO3 formed on a sapphire R (1, -1, 0, 2) face substrate for reducing lattice mismatch between the sapphire R (1, -1, 0, 2) face substrate and the oxide high temperature superconductor thin film, and a second buffer layer composed of such an oxide high temperature superconductor but in which Ba is substituted with Sr formed on the first buffer layer.
The first buffer layer reduces the lattice mismatch between the sapphire R (1, -1, 0, 2) face substrate and the oxide high temperature superconductor thin, the second buffer layer prevents an interfacial reaction with Ba, thereby permitting the epitaxial growth of an oxide high temperature superconductor thin film that excels in both crystallographic integrity and crystallographic orientation.
特許請求の範囲(英語) [claim1]
1. An oxide high temperature superconductor comprising a crystalline substrate, a first buffer layer formed on said crystalline substrate, a second buffer layer formed on said first buffer layer, and an oxide high temperature superconductor thin film formed on said second buffer layer, wherein said first buffer layer is made of CeO2,
said second buffer layer has a composition formula:
Cu1-xMxSr2CaCu2O8-w,
said oxide high temperature superconductor thin film has a composition formula:
Cu1-xMx(Ba1-ySry)2(Ca1-zLz)n-1(Cu1-qQq)nO2n+4-w,
M represents Tl, Hg, Bi, Pb, In, Ga, Al, B, C, Si, Sn, Ag, Au, S, N, P, Mo, Re, Os, Cr, Ti, V, Fe, one element in the lanthanide series, or one or more alkali metal elements,
L represents Mg, Y, or one or more elements in the lanthanide series,
Q represents either or both of Mg and Zn,
0 <= x <= 1, 0 <= y<1, 0 <= z <= 1, 0 <= q<0.1, 0 <= w <= 4, and 2 <= n <= 5;
wherein said second buffer layer completely overlies the first buffer layer, and
said oxide superconductor thin film has a uniform orientation, and said crystalline substrate is a sapphire substrate.
[claim2]
2. An oxide high temperature superconductor comprising a crystalline substrate, a first buffer layer formed on said crystalline substrate, a second buffer layer formed on said first buffer layer, and an oxide high temperature superconductor thin film formed on said second buffer layer, wherein said first buffer layer is made of CeO2,
said second buffer layer has a composition formula:
Cu1-xMxSr2CaCu2O8-w,
said oxide high temperature superconductor thin film has a composition formula:
(Cu1-xMx)2(Ba1-ySry)2(Ca1-zLz)n-1(Cu1-qQq)nO2n+4-w,
M represents Tl, Hg, Bi, Pb, In, Ga, Al, B, C, Si, Sn, Ag, Au, S, N, P, Mo, Re, Os, Cr, Ti, V, Fe, one element in the lanthanide series, or one or more alkali metal elements,
L represents Mg, Y, or one or more elements in the lanthanide series,
Q represents either or both of Mg and Zn,
0 <= x <= 1, 0 <= y<1, 0 <= z <= 1, 0 <= q<0.1, 0 <= w <= 4, and 2 <= n <= 5;
wherein said second buffer layer completely overlies the first buffer layer, and said oxide superconductor thin film has a uniform orientation, and said crystalline substrate is a sapphire substrate.
[claim3]
3. An oxide high temperature superconductor as set forth in claim 1, wherein said sapphire substrate has a sapphire R face (1, -1, 0, 2).
[claim4]
4. An oxide high temperature superconductor as set forth in claim 2, wherein said sapphire substrate has a sapphire R face (1, -1, 0, 2).
  • 発明者/出願人(英語)
  • ATHINARAYANAN SUNDARESAN
  • IHARA HIDEO
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
米国特許分類/主・副
  • 505/237
  • 505/238
  • 505/782
  • 505/783
参考情報 (研究プロジェクト等) CREST Function Evolution of Materials and Devices based on Electron/Photon Related Phenomena AREA
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