TOP > 外国特許検索 > Spin injection device, magnetic device using the same, magnetic thin film used in the same

Spin injection device, magnetic device using the same, magnetic thin film used in the same

外国特許コード F110005221
整理番号 A241-08US
掲載日 2011年8月26日
出願国 アメリカ合衆国
出願番号 53868903
公報番号 20060044703
公報番号 7675129
出願日 平成15年12月11日(2003.12.11)
公報発行日 平成18年3月2日(2006.3.2)
公報発行日 平成22年3月9日(2010.3.9)
国際出願番号 JP2003015888
国際公開番号 WO2004055906
国際出願日 平成15年12月11日(2003.12.11)
国際公開日 平成16年7月1日(2004.7.1)
優先権データ
  • 特願2002-363127 (2002.12.13) JP
  • 特願2002-378502 (2002.12.26) JP
  • 特願2003-271628 (2003.7.7) JP
  • 特願2003-410966 (2003.12.9) JP
  • 2003WO-JP15888 (2003.12.11) WO
発明の名称 (英語) Spin injection device, magnetic device using the same, magnetic thin film used in the same
発明の概要(英語) (US7675129)
A spin injection device capable of spin injection magnetization reversal at low current density, a magnetic apparatus using the same, and magnetic thin film using the same, whereby the spin injection device (14) including a spin injection part (1) comprising a spin polarization part (9) including a ferromagnetic fixed layer (26) and an injection junction part (7) of nonmagnetic layer, and a ferromagnetic free layer (27) provided in contact with the spin injection part (1) is such that in which the nonmagnetic layer (7) is made of either an insulator (12) or a conductor (25), a nonmagnetic layer (28) is provided on the surface of the ferromagnetic free layer (27), electric current is flown in the direction perpendicular to the film surface of the spin injection device (14), and the magnetization of the ferromagnetic free layer (27) is reversed.
This is applicable to such various magnetic apparatuses and magnetic memory devices as super gigabit large capacity, high speed, non-volatile MRAM and the like.
特許請求の範囲(英語) [claim1]
1. A spin injection device comprising: a spin injection part having a spin polarizing part consisting of a ferromagnetic layer and an injection junction part consisting of a nonmagnetic insulating layer; and
SyAF having a first magnetic layer and a second magnetic layer having different magnitudes of magnetization, and magnetically coupled together antiparallel to each other via a nonmagnetic layer, wherein said first magnetic layer of SyAF and said injection junction part are bonded, and
a spin polarization electron is injected from said spin injection part by flowing electric current between said spin polarizing part and said second magnetic layer, wherein magnetization of said first and second magnetic layers is reversed while maintained in antiparallel state without applying an external magnetic field, and wherein
said flowing electric current is 1 mA or less.
[claim2]
2. The spin injection device as set forth in claim 1, wherein said spin polarization electron is capable of spin conservation conduction or tunnel junction at the injection junction part of said spin injection part.
[claim3]
3. The spin injection device as set forth in claim 1 or claim 2, wherein the ferromagnetic layer is provided in contact with an antiferromagnetic layer that fixes the spin of said ferromagnetic layer.
[claim4]
4. The spin injection device as set forth in claim 1 or claim 2, wherein the aspect ratio of the first and the second magnetic layers of SyAF in contact with the injection junction part of said spin injection parts is less than 2.
[claim5]
5. A spin injection magnetic apparatus comprising: a spin injection part having a spin polarizing part consisting of a first ferromagnetic layer and an injection junction part consisting of a first insulating layer, said first insulating layer formed in contact with said first ferromagnetic layer;
an SyAF free layer formed in contact with said first insulating layer, said SyAF free layer having a first magnetic layer and a second magnetic layer coupled together magnetically antiparallel to each other via a nonmagnetic layer, and in which magnitudes of magnetization are different, and the magnetization of said first magnetic layer and said second magnetic layer is capable of magnetization reversal while maintaining the antiparallel state; and
a ferromagnetic fixed layer tunnel-junctioned with the first magnetic layer of said SyAF free layer via a second insulating layer, wherein:
said ferromagnetic fixed layer and said free layer are made to be a ferromagnetic spin tunnel junction, and
the magnetization of said first and second magnetic layers is reversed by flowing electric current between said second magnetic layer of the free layer and said ferromagnetic fixed layer while maintained in an antiparallel state without applying an external magnetic field, and wherein said flowing electric current is 1 mA or less.
[claim6]
6. The spin injection magnetic apparatus as set forth in claim 5, wherein a spin polarization electron is capable of spin conservation conduction or tunnel junction at the injection junction part of said spin injection part.
[claim7]
7. The spin injection magnetic apparatus as set forth in claim 5, wherein the spin polarization part of said spin injection part is provided in contact with an antiferromagnetic layer that fixes the spin of a ferromagnetic layer.
[claim8]
8. The spin injection magnetic apparatus as set forth in claim 5, wherein the aspect ratio of the first and the second magnetic layers of the free layer in contact with the injection junction part of said spin injection part is less than 2.
[claim9]
9. The spin injection magnetic apparatus as set forth in claim 5, wherein said spin injection part is word line.
[claim10]
10. A spin injection device comprising: a spin injection part having a spin polarization part including a ferromagnetic fixed layer and an injection junction part of a nonmagnetic layer, said nonmagnetic layer formed contacted with said ferromagnetic fixed layer;
a ferromagnetic free layer provided in contact with said injection junction part; and
an antinonferromagnetic layer provided on the surface of said ferromagnetic free layer, wherein:
said nonmagnetic layer of the injection junction part is made of an insulator or a conductor, and
the magnetization of said ferromagnetic free layer by flowing electric current between the spin polarization part and said nonmagnetic layer provided on the surface of said ferromagnetic free layer in the direction perpendicular to the film surface without applying an external magnetic field, and wherein said flowing electric current is 1 mA or less.
[claim11]
11. The spin injection device as set forth in claim 10, wherein said ferromagnetic free layer is made of Co or Co alloy, said antinonferromagnetic layer provided on the surface of said ferromagnetic free layer is any one of Ru, Ir and Rh layer, and its film thickness is 0.1 nm-20 nm.
[claim12]
12. A spin injection device comprising: a spin injection part having a spin polarization part including a first ferromagnetic fixed layer and an injection junction part of a nonmagnetic layer, said nonmagnetic layer formed in contact with said ferromagnetic fixed layer;
a ferromagnetic free layer provided in contact with said injection junction part; and
a antinonferromagnetic layer formed in contact with said ferromagnetic free 1ayer; and
a second ferromagnetic fixed layer provided on the surface of said antinonferromagnetic layer, wherein:
said nonmagnetic layer of the injection junction part is made of an insulator or a conductor,
the magnetization of said ferromagnetic free layer is reversed by flowing electric current between the spin polarization part and the second ferromagnetic fixed layer provided on the surface of said ferromagnetic free layer in the direction perpendicular to the film surface without applying external magnetic field, and wherein said flowing electric current is 1 mA or less.
[claim13]
13. The spin injection device as set forth in claim 12, wherein said ferromagnetic free layer and said first and second ferromagnetic layer are made of Co or Co alloy, an antinonferromagnetic layer provided on the surface of said ferromagnetic free layer is any one of Ru, Ir and Rh layer, and its film thickness is 2 nm-20 nm.
[claim14]
14. A spin injection magnetic apparatus wherein, said spin injection apparatus uses the spin injection device as set forth in any one of said claims 10-13.
[claim15]
15. A spin injection magnetic memory device, wherein the spin injection magnetic memory device uses the spin injection device as set forth in any one of said claims 10-13.
[claim16]
16. A spin injection device comprising: a spin injection part having a spin polarizing part consisting of a ferromagnetic layer and an injection junction part consisting of a nonmagnetic conductive layer, and SyAF having a first magnetic layer and a second magnetic layer having different magnitudes of magnetization and magnetically coupled together antiparallel to each other via a nonmagnetic layer, wherein said first layer of SyAF and said injection junction part are bonded and
a spin polarization electron is injected from said spin injection part by flowing electric current between said a spin polarizing part and the second magnetic layer, wherein magnetization of said first and second magnetic layers is reversed while maintained in an antiparallel state without applying a external magnetic field, and wherein said flowing electric current is 1 mA or less.
[claim17]
17. The spin injection device as set forth in claim 16, wherein said spin polarization electron is capable of spin conservation conduction at the injection junction part of said spin injection part.
[claim18]
18. The spin injection device as set forth in claim 16 or claim 17, wherein the ferromagnetic layer is provided in contact with an antiferromagnetic layer that fixes the spin of a ferromagnetic layer.
[claim19]
19. The spin injection device as set forth in claim 16 or claim 17, wherein the aspect ratio of the first and the second magnetic layers of SyAF in contact with the injection junction part of said spin injection parts is less than 2.
  • 発明者/出願人(英語)
  • INOMATA KOUICHIRO
  • TEZUKA NOBUKI
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
米国特許分類/主・副
  • 257/421
  • 257/E21.665
  • 360/324.11
  • 360/324.12
  • 360/324.2
参考情報 (研究プロジェクト等) CREST Creation of Nanodevices and System Based on New Physical Phenomena and Functional Principles AREA
ライセンスをご希望の方、特許の内容に興味を持たれた方は、問合せボタンを押してください。

PAGE TOP

close
close
close
close
close
close