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Electric device using solid electrolyte

外国特許コード F110005237
整理番号 B01-02WO
掲載日 2011年8月29日
出願国 アメリカ合衆国
出願番号 49059802
公報番号 20060157802
公報番号 7875883
出願日 平成14年9月24日(2002.9.24)
公報発行日 平成18年7月20日(2006.7.20)
公報発行日 平成23年1月25日(2011.1.25)
国際出願番号 JP2002009759
国際公開番号 WO2003028124
国際出願日 平成14年9月24日(2002.9.24)
国際公開日 平成15年4月3日(2003.4.3)
優先権データ
  • 特願2001-292392 (2001.9.25) JP
  • 2002WO-JP09759 (2002.9.24) WO
発明の名称 (英語) Electric device using solid electrolyte
発明の概要(英語) (US7875883)
The present invention relates to a transistor for selecting a storage cell and a switch using a solid electrolyte.
In a storage cell, a metal is stacked on a drain diffusion layer of a field-effect transistor formed on a semiconductor substrate surface.
The solid electrolyte using the metal as a carrier is stacked on the metal.
The solid electrolyte contacts with the metal via a gap, and the metal is connected to a common grounding conductor.
A source of the field-effect transistor is connected to a column address line, and a gate of the field-effect transistor is connected to a row address line.
特許請求の範囲(英語) [claim1]
1. An electric device which is a solid electrolyte switch and having a latch function, comprising: a first metal thin film that is disposed on an insulating film, the first metal thin film contacting with the insulating film,
a solid electrolyte that is disposed on a top surface of the first metal thin film, a metal ion of the first metal thin film being used as a carrier in the solid electrolyte, and
a second metal thin film that is disposed over the solid electrolyte and over the top surface of the first metal thin film via an air gap,
wherein the second metal thin film does not make contact with the solid electrolyte, and
wherein the first metal thin film and the second metal thin film are partially overlapped in a vertical direction with respect to the insulating film.
[claim2]
2. An electric device which is a solid electrolyte switch and having a latch function, comprising: a solid electrolyte that is disposed in a first part on a top surface of an insulating film;
a first metal thin film that is disposed on the solid electrolyte; and
a second metal thin film that is disposed on the top surface of the insulating film,
wherein the solid electrolyte is disposed in a second part over the second metal thin film via an air gap,
wherein a metal ion as a carrier of the solid electrolyte being used as a material in the first metal thin film,
wherein the second metal thin film does not contact with the solid electrolyte, and
wherein the first metal thin film and the second metal thin film are partially overlapped in a vertical direction with respect to the insulating film.
[claim3]
3. A storage device, comprising: one storage cell forming a constituting element of the storage device comprises (1) one field-effect transistor and (2) one solid electrolyte switch according to claim 1 or 2,
the solid electrolyte switch according to claim 1 or 2 is disposed on a drain region of the field-effect transistor formed on a semiconductor substrate surface,
the second metal thin film of the solid electrolyte switch is connected to a common grounding conductor,
a source of the field-effect transistor is connected to a column address line, and
a gate of the field-effect transistor is connected to a row address line.
[claim4]
4. A storage device, comprising: one storage cell forming a constituting element of the storage device comprises (1) one diode and (2) one solid electrolyte switch according to claim 1 or 2,
the solid electrolyte switch according to claim 1 or 2 is disposed on one electrode of a diode formed on a semiconductor substrate surface,
the second metal thin film of the solid electrolyte switch is connected to row address line, and
the other electrode of the diode is connected to a column address line.
[claim5]
5. A storage device, comprising: one storage cell forming a constituting element of the storage device and comprising the solid electrolyte switch according to claim 1 or 2,
a part of the first metal thin film connected to a row address line formed on a semiconductor substrate surface is the solid electrolyte in which a metal ion of the first metal thin film is used as a carrier, and
the solid electrolyte intersects with the second metal thin film connected to a column address line via the air gap.
[claim6]
6. An electric device, wherein: a semiconductor thin film is disposed in a portion contacting with the gap in the second metal thin film according to claim 1 or 2, and
a Schottky barrier is formed in an interface between a semiconductor and a metal so that a rectification function operates, when the solid electrolyte switch turns on.
[claim7]
7. A storage device, wherein: a semiconductor thin film is disposed in a portion contacting with the gap in the second metal thin film according to claim 5, and
a Schottky barrier is formed in an interface between a semiconductor and a metal so that a rectification function operates, when the solid electrolyte switch turns on.
[claim8]
8. An electric device according to claim 1 or claim 2, wherein the solid electrolyte is any one of silver ion conductive solid electrolytes, and copper ion conductive solid electrolytes, and a second metal is any one of platinum, tungsten, aluminum, gold, copper, and silver.
[claim9]
9. A storage device according to claim 3, wherein the solid electrolyte is any one of silver ion conductive solid electrolytes, and copper ion conductive solid electrolytes, and said second metal is any one of platinum, tungsten, aluminum, gold, copper, and silver.
[claim10]
10. An electric device as the solid electrolyte switch according to claim 1 or 2, wherein: a voltage is applied between a solid electrolyte layer and an opposite electrode layer at a manufacturing time in order to control an on-voltage which transits to an on-state from an off-state and an off-voltage which transits to the off-state from the on-state.
[claim11]
11. An electric device as a field programmable gate array comprising the solid electrolyte switch according to claim 1 or 2, wherein: the solid electrolyte switch is used as a first switch of wirings between logic blocks and a second switch which selects a function of the logic block.
  • 発明者/出願人(英語)
  • SAKAMOTO TOSHITSUGU
  • AONO MASAKAZU
  • HASEGAWA TSUYOSHI
  • NAKAYAMA TOMONOBU
  • TERABE KAZUYA
  • KAWAURA HISAO
  • SUGIBAYASHI TADAHIKO
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • NEC
  • RIKEN
国際特許分類(IPC)
米国特許分類/主・副
  • 257/41
  • 257/E45.002
  • 257/E45.003
参考情報 (研究プロジェクト等) SORST Selected in Fiscal 2000
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